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Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma

  • Ji, Su-Hyeon (School of Chemical Engineering, Chonnam National University) ;
  • Jang, Woo-Sung (School of Chemical Engineering, Chonnam National University) ;
  • Son, Jeong-Wook (School of Chemical Engineering, Chonnam National University) ;
  • Kim, Do-Heyoung (School of Chemical Engineering, Chonnam National University)
  • Received : 2018.09.04
  • Accepted : 2018.10.23
  • Published : 2018.12.01

Abstract

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.

Keywords

Acknowledgement

Supported by : National Research Foundation of Korea

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