• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.5
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• pp.8-15
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• 2018

Films with special properties (e.g., water-repellent films, optical films, anti-reflection films, and flexible films) are referred to as functional films. Recently, there has been interest in fine patterning methods for film fabrication. In particular there have been many studies that use a UV nanoimprint process involving a UV curing method. In this paper, a polymer film was fabricated by the UV nanoimprint process with a micro-pattern, and its durability was evaluated by a wear test and a nano-indentation test. The film mechanical properties (such as coefficient of friction, hardness, and modulus of elasticity) were measured. Moreover, the choice of PUA type resin used in the UV nanoimprint process was confirmed to impact the durability of the thin film. Despite making the polymer film samples using the same method and PUA type resin, different coefficient of friction, hardness, and modulus of elasticity values were obtained. PUA 4 resin had the most favorable coefficient of friction, hardness, and modulus of elasticity. This material is predicted to produce a high durability functional film.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.371-374
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• 2007

A method for metal nano powder imprinting is proposed as a patterning process for conductive tracks that is inexpensive and scalable down to the nanoscale. Conductive tracks with line widths of $0.5{\sim}20{\mu}m$ were fabricated using this method. The processing conditions were optimized to avoid various types of defects, and to increase the degree of sintering and electric conductivity of the imprinted conductive tracks. The mean electric resistivity of the conductive tracks imprinted under optimum conditions was $8.95{\mu}{\Omega}{\cdot}cm$, which is in the range required for practical applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.20-30
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• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1489-1492
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• 2005

Compared to other nano-patterning techniques, Nano imprint Lithography (NIL) has some advantages of high throughput and low process cost. To imprint low temperature and pressure, UV Nano imprint Lithography, which using the monomer based UV curable resin is suggested. Because fabrication of high fidelity pattern on topographical substrate is difficult, bi-layer Nano imprint lithography, which are consist of easily removable under-layer and imprinted pattern, is being used. If residual layer is not remained after imprinting, and under-layer is removed by oxygen RIE etching, we might be able to fabricate the bi-layer pattern for easy lift-off process.

• The KSFM Journal of Fluid Machinery
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• v.9 no.2 s.35
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• pp.19-24
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• 2006

Nano fountain-pen is a novel device to make the constant patterning in micro process using new designed probe. Fountain-pen nanolithography (FPN) is applied for constant supply of liquid in conjunction of patterns and surface variation in the micro process. In this study, nuo fountain-pen is composed with reservoir, micro channels, tip and scondary chamber. Instead of traditional method only using capillary force, liquid can be definitely and exactly injected with membrane pumping by the repulse force of tip. It is dfficult to perform experiments in the micro range so that we carried out a numerical analysis for internal flow, using a commercial code, FlUENT, The velocity, pressure and flow rate are obtained under laminar, unsteady, three-dimensional incompressible flow with no-slip condition, and results are graphically described.

• Journal of Institute of Convergence Technology
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• v.5 no.2
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• pp.21-25
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• 2015

This paper proposes a fabrication process of deposited layer with micro patterns that uses a combination of a pulsed laser beam machining and an electrodeposition. This process consists of the electrodeposition and the laser beam machining. The deposited layer on metal can be selectively eliminated by laser ablation. As a result, the deposited layer with micro patterns can be fabricated without a mask. The characteristics of the deposited layer on stainless steel were investigated according to the average power and marking speed in the pulsed laser beam machining. The optimal laser beam conditions for precise micro patterning of the deposited layer were determined. Finally, the deposited copper layer with micro text was successfully fabricated by the pulsed laser beam machining.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.59.2-59.2
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• 2011

We have demonstrated ink-jet printed indium tin oxide (ITO) and indium tin zinc oxide (IZTO) electrodes for cost-efficient organic solar cells (OSCs). By ink-jetting of crystalline ITO nano-particles and performing a rapid thermal anneal at $450^{\circ}C$, we were able to obtain directly patterned-ITO electrodes with an average transmittance of 84.14% and a sheet resistance of 202.7 Ohm/square without using a conventional photolithography process. The OSCs fabricated on the directly patterned ITO electrodes by ink-jet printing showed an open circuit voltage of 0.57 V, short circuit current of 8.47 mA/cm2, fill factor of 44%, and power conversion efficiency of 2.13%. This indicates that the ITO directly-patterned by ink-jet printing is a viable alternative to sputter-grown ITO electrodes for cost-efficient printing of OSCs due to the absence of a photolithography process for patterning and more efficient ITO material usage.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.227-229
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• 2003

We present a process for printing active matrix displays. In this process, transistors are fabricated using soluble semi-conducting and conducting materials. Accurate definition of the transistor channel and other circuit components is achieved by direct inkjet printing combined with surface energy patterning. We present results on our 4,800 pixel, 50 dpi, active matrix displays.

• Journal of Institute of Control, Robotics and Systems
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• v.8 no.5
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• pp.419-424
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• 2002

After the patterning and probe process of wafer have been achieved, the dicing processing is necessary to separate chips from a wafer. The dicing process cuts a semiconductor wafer to lengthwise and crosswise directions to make many chips. The existing general dicing method is the mechanical cutting using a narrow circular rotating blade impregnated diamond particles or laser cutting. Inferior goods can be made by the mechanical or laser cutting unless several parameters such as blade, wafer, cutting water and cutting conditions are properly set. Moreover, we can not apply these general dicing method to that of GaN wafer, because the GaN wafer is harder than general semiconductor wafers such as GaAs, GaAsP, AIGaAs and so forth. In order to overcome these problems, this paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.196-198
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• 2003

Classical lithography in semiconductor employs stepper technologies. Limits of this technology are clearly seen at structures below 100nm. Nano-imprinting lithography is a new method for generating patterns in submicron range at reasonable cost. In order to manufacture nano-imprinting lithography(NIL) equipment, several NIL manufacturers have been developing key technologies for realization of nano-imprinting process, recently. In this paper, we've been describe state-of-the-art and technology trends for nano-imprinting lithography equipments.