• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.376-381
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• 2014

We present a CMOS rail-to-rail class-AB amplifier using dynamic current biasing to improve the delay response of the error amplifier in a low-dropout (LDO) regulator, which is a building block for a wireless power transfer receiver. The response time of conventional error amplifiers deteriorates by slewing due to parasitic capacitance generated at the pass transistor of the LDO regulator. To enhance slewing, an error amplifier with dynamic current biasing was devised. The LDO regulator with the proposed error amplifier was fabricated in a $0.35-{\mu}m$ high-voltage BCDMOS process. We obtained an output voltage of 4 V with a range of input voltages between 4.7 V and 7 V and an output current of up to 212 mA. The settling time during line transient was measured as $9{\mu}s$ for an input variation of 4.7-6 V. In addition, an output capacitor of 100 pF was realized on chip integration.

• Proceedings of the Korean Information Science Society Conference
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• 2004.10a
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• pp.556-558
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• 2004

최근 VLSI 설계 분야에서, 단열 논리는 에너지 효율성이 뛰어난 저전력 설계 기술 중 하나로 각광 받고 있다. 이러한 단열 논리는 기존의 저전력 회로 설계를 위해 사용되었던 CMOS 논리들을 서서히 대체해 나갈 컷으로 기대되고 있다. 하지만 않은 단열 논리들의 제시에도 불구하고, 기존의 CMOS논리들을 단열 논리로 대체하는 기법에 관한 연구는 거의 없는 실정이다. 이 논문에서는 래치형 패스 트랜지스터 단열 논리(LPAL)와 이를 이용한 저전력 설계 기법을 소개하였다. 래치형 패스 트랜지스터 단열 논리는 기존의 단열 논리들이 가지고 있는 단정을 해결하고, 보다 저전력 지향적으로 CMOS논리를 대체 할 수 있다는 장점을 가진다.

• Journal of IKEEE
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• v.24 no.4
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• pp.1162-1166
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• 2020

In this paper Low Drop-Out (LDO) regulator that improved load regulation characteristics due to the feedback detection structure. The proposed feedback sensing circuit is added between the output of the LDO's internal error amplifier and the input of the pass transistor to improve the regulation of the delta value coming into the output. It has a voltage value with improved load regulation characteristics than existing LDO regulator. The proposed LDO structure was analyzed in Samsung 0.13um process using Cadence's Virtuoso, Spectre simulator.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.147-151
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• 2024

The importance of Wireless Sensor Networks is becoming more evident owing to their practical applications in various areas. However, the energy problem remains a critical barrier to the progress of WSNs. By reducing the energy consumed by the sensor nodes that constitute WSNs, the performance and lifespan of WSNs will be enhanced. In this study, we introduce an energy-efficient ternary modulator that employs multi-threshold CMOS for logic conversion. We optimized the design with a low-power ternary gate structure based on a pass transistor using the MTCMOS process. Our design uses 71.69% fewer transistors compared to the previous design. To demonstrate the improvements in our design, we conducted the HSPICE simulation using a CMOS 180 nm process with a 1.8V supply voltage. The simulation results show that the proposed ternary modulator is more energy-efficient than the previous modulator. Power-delay product, a benchmark for energy efficiency, is reduced by 97.19%. Furthermore, corner simulations demonstrate that our modulator is stable against PVT variations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.52-62
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• 2003

This paper discusses ternary logic gate, ternary D flip-flop, and ternary four-digit parallel input/output register. The ternary logic gates consist of n-channel pass transistors and neuron MOS(νMOS) threshold inverters on voltage mode. They are designed with a transmission function using threshold inverter that are in turn, designed using Down Literal Circuit(DLC) that has various threshold voltages. The νMOS pass transistor is very suitable gate to the multiple-valued logic(MVL) and has the input signal of the multi-level νMOS threshold inverter. The ternary D flip-flop uses the storage element of the ternary data. The ternary four-digit parallel input/output register consists of four ternary D flip-flops which can temporarily store four-digit ternary data. In this paper, these circuits use 3.3V low power supply voltage and 0.35m process parameter, and also represent HSPICE simulation result.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.3
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• pp.40-46
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• 2001

In this paper, a novel low power full adder circuit comprising only 10 transistors is proposed. The circuit is based on the six -transistor CMOS XOR circuit, which generates both XOR and XNOR signals and pass transistors. This adder circuit provides a good low power characteristics due to the smaller number of transistors and the elimination of short circuit current paths. Layouts have been carried out using a 0.65 ${\mu}m$ ASIC design rule for evaluation purposes. The physical design has been evaluated using HSPICE at 25MHz to 50MHz. The proposed circuit has been used to build 2bit and 8bit ripple carry adders, which are used for evaluation of power consumption, time delay and rise and fall time. The proposed circuit shows substantially improved power consumption characteristics, about 70% lower than transmission gate full adder (TFA), and 60% lower than a design using 14 transistors (TR14). Delay and signal rise and fall time are also far shorter than other conventional designs such as TFA and TR14.

• Journal of Sensor Science and Technology
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• v.19 no.1
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• pp.25-30
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• 2010

This paper presents a low noise CMOS regulator for a low power capacitive sensor interface in a $0.5{\mu}m$ CMOS standard technology. Proposed LDO regulator circuit consist of a voltage reference block, an error amplifier and a new buffer between error amplifier and pass transistor for a good output stability. Conventional source follower buffer structure is simple, but has a narrow output swing and a low S/N ratio. In this paper, we use a 2-stage wide band OTA instead of source follower structure for a buffer. From SPICE simulation results, we got 0.8 % line regulation and 0.18 % load regulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.91-97
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• 2004

A digital over-sampling noise-shaping coder to achieve the processing accuracy for the audio signal bandwidth is designed. In order to implement an optimized design of the noise-shaping coder as a form of U (intellectual property), circuit design techniques that optimize the multiplication and the ROM architectures are proposed with emphasis on the low-voltage operation under 2.0 V and the minimization of the hardware resources. In the design and verification methodology, the overall architectures and the internal bit width have been determined through behavioral simulations. The overall performances including timing margin have been estimated through transistor-level simulations. Furthermore, the test results of the implemented chip using a 0.35-${\mu}{\textrm}{m}$ standard CMOS process proposed the validity of the proposed circuits and the design methodology.