• Korean Journal of Exercise Nutrition
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• v.24 no.3
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• pp.7-12
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• 2020

[Purpose] This study was performed to investigate the acid-base and ion balance at rest and after exercise in healthy males under normoxia, moderate hypoxia, and severe hypoxia. [Methods] Ten healthy Korean males completed three different trials on different days, comprising exercise under normoxia (F_iO₂ = 20.9%, N trial), moderate hypoxia (F_iO₂ = 16.5%, MH trial), and severe hypoxia (F_iO₂ = 12.8%, SH trial). They undertook endurance exercise for 30 min on a cycle ergometer at the same relative exercise intensity equivalent to 80% maximal heart rate under all conditions. Capillary blood samples were obtained to determine acid-base and ion balance at rest and after exercise. [Results] Exercise-induced blood lactate elevations were significantly increased as hypoxic conditions became more severe; SH > MH > N trials (P = 0.003). After exercise, blood glucose levels were significantly higher in the SH trial than in the N and MH trials (P = 0.001). Capillary oxygen saturation (S_CO₂) levels were significantly lowered as hypoxic conditions became more severe; SH > MH > N trials (P < 0.001). The pH levels were significantly lower in the MH trial than that in the N trial (P = 0.010). Moreover, H_CO_3^- levels were significantly lower in the SH trial than in the N trial, with significant interaction (P = 0.003). There were no significant differences in blood Na⁺, K⁺, and Ca²⁺ levels between the trials. [Conclusion] MH and SH trials induced greater differences in glucose, lactate, S_CO₂, pH, and HCO_3^- levels in capillary blood compared to the N trial. Additionally, lactate, S_CO₂, and HCO_3^- levels showed greater changes in the SH trial than in the MH trial. However, there were no significant differences in Na⁺, K⁺, and Ca²⁺ levels in MH and SH trials compared to the N trial.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.43-51
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• 2006

80-nm self-aligned n-and p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The n- and p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 ${\mu}A$ and 355.4/8.9 ${\mu}A$ per ${\mu}m$, respectively. We also investigated some critical issues in device design such as the junction depth of the source extension region and the substrate doping concentration.

• Communications of the Korean Mathematical Society
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• v.17 no.2
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• pp.221-227
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• 2002

In this paper we will show that the followings ; (1) Let R be a regular local ring of dimension n. Then $A_{n-2}$(R) = 0. (2) Let R be a regular local ring of dimension n and I be an ideal in R of height 3 such that R/I is a Gorenstein ring. Then [I] = 0 in $A_{n-3}$(R). (3) Let R = V[[ $X_1$, $X_2$, …, $X_{5}$ ]]/(p+ $X_1$$^{t1}$ + $X_2$$^{t2}$ + $X_3$$^{t3}$ + $X_4$$^2$+ $X_{5}$ $^2$/), where p $\neq$2, $t_1$, $t_2$, $t_3$ are arbitrary positive integers and V is a complete discrete valuation ring with (p) = mv. Assume that R/m is algebraically closed. Then all the Chow group for R is 0 except the last Chow group.group.oup.

• The Journal of Korean Academy of Prosthodontics
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• v.32 no.1
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• pp.1-8
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• 1994

The purpose of this study was to evaluate the effect of the canal filling sealer to resin cement When posts were cemented in the endodontically treated teeth, 86 incisors were used. The coronal portion of the teeth were removed at the cemento-enamel junction, every tooth was done treatment of canal. And the teeth was divided was into 12 groups. G : I a n : 7 Treatment : Z.P.C (1 day after Z.O.E. sealer) G : I b n : 7 Treatment : All-Bond (3 day after sealer) G : II a n : 8 Treatemt : Z.P.C (3 day after sealer) G : II b n : 7 Treatemt : All-Bond (3 day after sealer) G : III a n : 8 Treatemt : Z.P.C (7 day after sealer) G : III b n : 8 Treatemt : All-Bond (7 day after sealer) G : IV a n : 7 Treatemt : Z.P.C (1 day after Apexit sealer) G : IV b n : 7 Treatemt : All-Bond (1 day after sealer) G : V a n : 7 Treatemt : Z.P.C (3 day after sealer) G : V b n : 7 Treatemt : All-Bond (3 day after sealer) G : VI a n : 7 Treatemt : Z.P.C (7 day after sealer) G : VI a n : 7 Treatemt : All-Bond (7 day after sealer) Ready made stainless steel Para-post(PD-K-3) was cemented with Z.P.C. in subgroup a, and cemented with All-Bond & composite resin cement in subgroup b to depth 7mm. After 5 days at cementation of post, teeth with cemented posts were mounted on a retention jig and the failure loads of the specimens were measured by an Instron Universal Testing Machine. The results were as follows. 1. The results of failure loads were $15.5{\pm}7.1kg$ in group I b, $21.6{\pm}5.4kg$ in group II b and $20.1{\pm}18.1kg$ in group III b, and there was no statistically significant , difference between each group(p>0.05). 2. The results of failure loads were $19.0{\pm}6.7kg$ in group IV b, $17.3{\pm}6.5kg$ in group V b.and $18.9{\pm}7.9kg$ in group VI b and there was no significant difference between each other(p>0.05). 3. In same condition, the failure load of subgroup a was largely higher the subgroup b. But there was no significant difference between each other(p>0.05).

• YAKHAK HOEJI
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• v.13 no.1
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• pp.43-46
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• 1969

Five new acyl derivatives of isonicotinic acid hydrazide such as N-(2,4-dichlorophenoxyacetyl)-isoniotinic acid hydrazide (I), N-(p-nitrobenzoyl)-isonicotinic acid hydrazide (II), N-benzoylisonicotinic acid hydrazide (III), N-furoylisonicotinic acid hydrazide (IV) and N-(p-aminobenzoyl)-isonicotinic acid hydrazide (V) were synthesized. They were obtained by the action of 2,4-dichlorophenylacetyl chloride, p-nitrobenzoyl chloride, benzoyl chloride, furoyl chloride and p-aminobenzoyl chloride with isonicotinic acid hydrazide in pyridine solution. Evaluated for their in vitro antitubercular activity against Mycobaterium tuberculosis H$_{37}$ R$_{\upsilon}$ N-furoylisonicotinic acid hydrazide (IV) showed antitubercular activity at 1${\gamma}$/ml.

• Journal of the Chungcheong Mathematical Society
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• v.14 no.1
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• pp.1-6
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• 2001

We investigate the relationships between the Gottlieb groups and the generalized Gottlieb groups, and study some properties of the generalized Gottlieb groups. Lee and Woo [5] proved that $G_n(X,i_1,X{\times}Y){\simeq_-}G_n(X){\oplus}{\pi}_n(Y)$. We can easily re-prove the above main theorem of [5] using some properties of the generalized Gottlieb groups, and obtain a more powerful result as follows; if $F{\rightarrow}^iE{\rightarrow}^pB$ is a homotopically trivial fibration, then $G_n(F,i,E){\simeq_-}{\pi}_n(B){\oplus}G_n(F)$.

• Current Photovoltaic Research
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• v.11 no.4
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• pp.103-107
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• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• Journal of the Korea Society of Computer and Information
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• v.19 no.7
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• pp.71-76
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• 2014

There is to be virtually impossible to solve the very large digits of prime number p and q from composite number n=pq using integer factorization in typical public-key cryptosystems, RSA. When the public key e and the composite number n are known but the private key d remains unknown in an asymmetric-key RSA, message decryption is carried out by first obtaining ${\phi}(n)=(p-1)(q-1)=n+1-(p+q)$ and then using a reverse function of $d=e^{-1}(mod{\phi}(n))$. Integer factorization from n to p,q is most widely used to produce ${\phi}(n)$, which has been regarded as mathematically hard. Among various integer factorization methods, the most popularly used is the congruence of squares of $a^2{\equiv}b^2(mod\;n)$, a=(p+q)/2,b=(q-p)/2 which is more commonly used then n/p=q trial division. Despite the availability of a number of congruence of scares methods, however, many of the RSA numbers remain unfactorable. This paper thus proposes an algorithm that directly and immediately obtains ${\phi}(n)$. The proposed algorithm computes $2^k{\beta}_j{\equiv}2^i(mod\;n)$, $0{\leq}i{\leq}{\gamma}-1$, $k=1,2,{\ldots}$ or $2^k{\beta}_j=2{\beta}_j$ for $2^j{\equiv}{\beta}_j(mod\;n)$, $2^{{\gamma}-1}$ < n < $2^{\gamma}$, $j={\gamma}-1,{\gamma},{\gamma}+1$ to obtain the solution. It has been found to be capable of finding an arbitrarily located ${\phi}(n)$ in a range of $n-10{\lfloor}{\sqrt{n}}{\rfloor}$ < ${\phi}(n){\leq}n-2{\lfloor}{\sqrt{n}}{\rfloor}$ much more efficiently than conventional algorithms.

• Bulletin of the Korean Mathematical Society
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• v.39 no.3
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• pp.479-484
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• 2002

Let I be an ideal in a Gorenstein local ring A with the maximal ideal m and d = dim A. Then we say that I is a good ideal in A, if I contains a reduction $Q=(a_1,a_2,...,a_d)$ generated by d elements in A and $G(I)=\bigoplus_{n\geq0}I^n/I^{n+1}$ of I is a Gorenstein ring with a(G(I)) = 1-d, where a(G(I)) denotes the a-invariant of G(I). Let S = A[Q/a$_1$] and P = mS. In this paper, we show that the following conditions are equivalent. (1) $I^2$ = QI and I = Q:I. (2) $I^2S$ = $a_1$IS and IS = $a_1$S：sIS. (3) $I^2$Sp = $a_1$ISp and ISp = $a_1$Sp ：sp ISp. We denote by $X_A(Q)$ the set of good ideals I in $X_A(Q)$ such that I contains Q as a reduction. As a Corollary of this result, we show that $I\inX_A(Q)\Leftrightarrow\IS_P\inX_{SP}(Qp)$.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1547-1549
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• 1996

The electrical and optical switching characteristics of gold-doped silicon p-i-n diodes have been investigated. The device shows a dark switching voltage of about 500 V. The switching voltage decreases rapidly when the illumination level is increased. The differential sensitivity of optical gating over linear region is $d(V_{Th}/V_{Tho})/dP_{Ph}$=0.25/uW. The turn-on delay time and the turn-on rise time decrease with increasing optical pulse power. The turn-off delay and the fall time are negligible.