• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.661-664
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• 1999

The piezoelectric properties and the doping effect of Nb$_2$O$_{5}$ for 0.95 PbZr$_{x}$ Ti$_{1-x}$ -O$_3$+0.05 Pb(Mnsub 1/3/Nb$_{2}$3/)O$_3$ compositions have been investigated. In the composition of 0.95PbZr$_{0.51}$Ti$_{0.49}$O$_3$+0.05Pb(Mn$_{1}$3/Nb/syb 2/3/)O$_3$ the values of k$_{p}$ and $\varepsilon$$_{33}$ $^{T}$ are maximized, but Q$_{m}$ was minimized (k$_{p}$ =0.57, Q$_{m}$ =1550). The grain size was suppressed and the uniformity of grain was improves with doping concentration of Nb$_2$O$_{5}$ far 0.95PbZr$_{0.51}$Ti$_{0.49}$O$_3$+0.05Pb(Mn$_{1}$3/Nb/syb 2/3/)O$_3$. sample. The values of k$_{p}$ first decreased slightly when a small amount of Nb$^{5+}$ is doped and then decreased when the Nb$^{5+}$ concentration is further increased. The Q$_{m}$ . OR the Other hand. increased monotonously with doping concentration of Nb$_2$O$_{5}$ .{5}$ . .

• 한국재료학회지
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• 제32권3호
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• pp.132-138
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• 2022

Zintl phase Mg₃Sb₂ is a promising thermoelectric material in medium to high temperature range due to its low band gap energy and characteristic electron-crystal phonon-glass behavior. P-type Mg₃Sb₂ has conventionally exhibited lower thermoelectric properties compared to its n-type counterparts, which have poor electrical conductivity. To address these problems, a small amount of Sn doping was considered in this alloy system. P-type Mg₃Sb₂ was synthesized by controlled melting, pulverizing, and subsequent vacuum hot pressing (VHP) method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate phases and microstructure development during the process. Single phase Mg₃Sb₂ was successfully formed when 16 at.% of Mg was excessively added to the system. Nominal compositions of Mg_3.8Sb_2-xSn_x (0 ≤ x ≤ 0.008) were considered in this study. Thermoelectric properties were evaluated in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity. A peak ZT value ≈ 0.32 was found for the specimen Mg_3.8Sb_1.994Sn_0.006 at 873 K, showing an improved ZT value compared to intrinsic one. Transport properties were also evaluated and discussed.

• Journal of Magnetics
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• 제16권1호
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• pp.15-18
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• 2011

We have studied the $TiO_2$ doping effects on the flux pinning behavior of an $MgB_2$ superconductor synthesized by the in-situ solid-state reaction. From the field-cooled and zero-field-cooled temperature dependences of magnetization, the reversible-irreversible transition of $TiO_2$-doped $MgB_2$ was determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). For comparison, the similar measurements are also obtained from SiC-doped $MgB_2$. The critical current density was estimated from the width of hysteresis loops in the framework of Bean's model at different temperatures. The obtained results manifest that nano-scale $TiO_2$ inclusions served as effective pinning centers and lead to the enhanced upper critical field and critical current density. It was concluded that the grain boundary pinning mechanism was realized in a $TiO_2$-doped $MgB_2$ superconductor.

• 한국자기학회지
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• 제16권3호
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• pp.168-172
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• 2006

졸-겔(sol-gel) 방법을 이용하여 제작된 산소결핍(oxygen vacancy)들을 내포하는 Ni 도핑된 루타일(rutile) 구조의 $TiO_{2-{\delta}}$ 박막들에 대하여 그 자기적 성질 및 관련된 전자구조적 성질에 대하여 조사분석 하였다. $TiO_{2-{\delta}}$:Ni 박막들에서 상온 강자성이 관측되었으며 Ni 도핑량이 증가할수록 포화 자화량($M_s$)이 점차 감소하여 6 at% 이상에서 일정한 값으로 유지되었다. 이와 같은 Ni 도핑량 6 at% 이하에서의 강자성 현상은 산소결핍 자리에 속박된 전자를 매개로 그 주위에 존재하는 불순물 이온들의 자기 능률들이 강자성 정렬을 이루게 되는 자기 폴라론(magnetic polaron)의 형성에 의한 것으로 해석된다. 소량의 Ni 도핑 시 각 이온당 최대 $3.7{\mu}_B/Ni$의 큰 $M_s$ 값이 나타났으며 6 at% 이상에서의 일정한 $M_s$ 값은 Ni cluster 형성에 의한 것으로 해석된다. 이와 같은 Ni cluster의 존재는 시료들에 대한 Hall 측정 결과 나타난 Ni 도핑량 증가에 따르는 p-n 전도성 전이를 설명하여 줄 수 있다.

• 대한전자공학회논문지
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• 제24권2호
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• pp.260-264
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• 1987

Gaussian $n^{+}$-p집합에 대해 위치함수인 유전율을 고려한 Poisson's equation의 일반적인 형태를 수치적으로 풀어 접합깊이가 전하밀도에 미치는 영향을 살펴 보았다. 또한 유전율의 변화에 기인한 전하 쌍극자의 해석적인 모델을 제시하였다.

• Nuclear Engineering and Technology
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• 제53권12호
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• pp.4106-4113
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• 2021

Rare earth doped barium tellurite glasses were synthesised and explored for their radiation shielding applications. All the samples showed good thermal stability with values varying between 101 ℃ and 135 ℃ based on dopants. Structural properties showed the dominance of matrix elements compared to rare earth dopants in forming the bridging and non-bridging atoms in the network. Bandgap values varied between 3.30 and 4.05 eV which was found to be monotonic with respective rare earth dopants indicating their modification effect in the network. Various radiation shielding parameters like linear attenuation coefficient, mean free path and half value layer were calculated and each showed the effect of doping. For all samples, LAC values decreased with increase in energy and is attributed to photoelectric mechanism. Thulium doped glasses showed the highest value of 1.18 cm^-1 at 0.245 MeV for 2 mol.% doping, which decreased in the order of erbium, holmium and the base barium tellurite glass, while half value layer and mean free paths showed an opposite trend with least value for 2 mol.% thulium indicating that thulium doped samples are better attenuators compared to undoped and other rare earth doped samples. Studies indicate an increased level of thulium doping in barium tellurite glasses can lead to efficient shielding materials for high energy radiation.

• Nuclear Engineering and Technology
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• 제55권7호
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• pp.2556-2566
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• 2023

A first-principle approach within the framework of density functional theory was employed to study the effect of vacancy defects and fission products (FPs) doping on the mechanical, electronic, and thermodynamic properties of uranium monocarbide (UC). Firstly, the calculated vacancy formation energies confirm that the C vacancy is more stable than the U vacancy. The solution energies indicate that FPs prefer to occupying in U site rather than in C site. Zr, Mo, Th, and Pu atoms tend to directly replace U atom and dissolve into the UC lattice. Besides, the results of the mechanical properties show that U vacancy reduces the compressive and deformation resistance of UC while C vacancy has little effect. The doping of all FPs except He has a repairing effect on the mechanical properties of U_1-xC. In addition, significant modifications are observed in the phonon dispersion curves and partial phonon density of states (PhDOS) of UC_1-x, Zr_xU_1-xC, Mo_xU_1-xC, and Rh_xU_1-xC, including narrow frequency gaps and overlapping phonon modes, which increase the phonon scattering and lead to deterioration of thermal expansion coefficient (α_V) and heat capacity (C_p) of UC predicted by the quasi harmonic approximation (QHA) method.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.204-208
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• 2011

In this paper, the design area of a fabricated solar cell has been analyzed with respect to its charge density. The mathematical calculation used for charge-density derivation was obtained from the 2001 version of a MATHCAD program. The parameter range for the calculations was ${\pm}1{\times}10^{17}cm^{-3}$, which is in the normal parameter range for n-type doping impurities ($7.0{\times}10^{17}cm^{-3}$) and also for p-type impurities ($4.0{\times}10^{17}cm^{-3}$). Therefore, it can be said that the fabricated solar-cell design area has a direct effect on charge-density changes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.104-108
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• 1993

Thin films of MgO-doped and CaO-doped iron oxide were prepared y spray pyrolysis. The films were characterized b X-ray diffraction, scanning electron microscopy and voltammetric techniques. The photoelectrochemical behavior of thin film electrodes depended greatly on the doping level, sintering temperature, substrate temperature and added photosensitizing compounds in solution, showed p-type photoelectrochemical behavior, while the CaO-doped iron oxide thin films prepared at low temperature showed n-type photoelectrochemical behavior. This characteristic change was interpreted in terms of the surface structure change of the thin films and doping effect of metal oxide.

• 전자공학회논문지D
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• 제35D권12호
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• pp.53-58
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• 1998

다결정 실리콘 박막 트랜지스터를 이용한 회로의 성능 향상을 위하여 새로운 구조의 4-terminal buried channel poly-Si TFT(BCTFT)를 설계하고 제작하였다. BCTFT는 moderate 도핑이 된 buried channel을 이용하므로 기존의 다결정 실리콘 TFT보다 ON-전류와 전계 효과 이동도가 n-형과 p-형 소자 각각 5배와 10배 향상되었다. BCTFT는 moderate 도핑된 buried 채널과 counter 도핑된 body 사이의 junction 공핍에 의하여 캐리어의 이동이 억제 되므로 OFF-전류가 증가하지 않았다.