Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1993.05a
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- Pages.104-108
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- 1993
PREPARATION AND CHARACTERIZATION ON THIN FILMS OF DOPED IRON OXIDE PHOTOSEMICONDUCTIVE ELECTRODES.
얇은막 산화철 광반도성 전극의 제조와 그 특성
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Kim, Il-Kwang
(Department of Chemistry, Won Kwang University)
;
- Kim, Yon-Geun (Department of Chemistry, Won Kwang University) ;
- Park, Tae-Young (Department of Physics Education, Won Kwang University) ;
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Park, Choon-Bae
(Department of Material Eng., Won Kwang University)
- Published : 1993.05.15
Abstract
Thin films of MgO-doped and CaO-doped iron oxide were prepared y spray pyrolysis. The films were characterized b X-ray diffraction, scanning electron microscopy and voltammetric techniques. The photoelectrochemical behavior of thin film electrodes depended greatly on the doping level, sintering temperature, substrate temperature and added photosensitizing compounds in solution, showed p-type photoelectrochemical behavior, while the CaO-doped iron oxide thin films prepared at low temperature showed n-type photoelectrochemical behavior. This characteristic change was interpreted in terms of the surface structure change of the thin films and doping effect of metal oxide.