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http://dx.doi.org/10.4313/TEEM.2011.12.5.204

A Study of the Quantitative Relationship of Charge-Density Changes and the Design Area of a Fabricated Solar Cell  

Jeon, Kyeong-Nam (Department of Electronic and Optical Communications Engineering, Gwang-ju University)
Kim, Seon-Hun (Department of Research and Business, Korea Photonics Technical Institute)
Kim, Hoy-Jin (Department of Research and Business, Korea Photonics Technical Institute)
Kim, In-Sung (Department of Research, Semitech Corporation)
Kim, Sang-Hyun (Department of Research, Semitech Corporation)
Publication Information
Transactions on Electrical and Electronic Materials / v.12, no.5, 2011 , pp. 204-208 More about this Journal
Abstract
In this paper, the design area of a fabricated solar cell has been analyzed with respect to its charge density. The mathematical calculation used for charge-density derivation was obtained from the 2001 version of a MATHCAD program. The parameter range for the calculations was ${\pm}1{\times}10^{17}cm^{-3}$, which is in the normal parameter range for n-type doping impurities ($7.0{\times}10^{17}cm^{-3}$) and also for p-type impurities ($4.0{\times}10^{17}cm^{-3}$). Therefore, it can be said that the fabricated solar-cell design area has a direct effect on charge-density changes.
Keywords
Gallium arsenide; Silicon; Impurity; Doping; Fabricated design area; Charge density;
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