• Applied Microscopy
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• v.42 no.3
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• pp.158-163
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• 2012

Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various microscopic techniques.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.19-23
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• 2007

The blue emitting OLEDs using TMP-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl) phosphonate] host and DJNBD-1 dopant have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum thermal evaporation method. Followed by the deposition, blue color emission layer was deposited using TMP-BiP as a host material and DJNBD-1 as a dopant. Finally, small molecule OLEDs with structure of $ITO/2-TNATA/NPB/TMP-BiP:DJNBD-l/Alq_3/LiF/Al$ were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. The effect of dopant into host material of the blue OLEDs was studied. The blue OLEDs with DJNBD-1 dopant showed that the maximum current and luminance were found to be about 34 mA and $8110\;cd/m^2$ at 11 V, respectively. In addition, the color coordinate was x=0.17, y=0.17 in CIE color chart, and the peak emission wavelength was 440 nm. The maximum current efficiency of 2.15 cd/A at 7 V was obtained in this experiment.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.311-315
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• 2009

2-dimensional (2D) dopant profiling in semiconductor device was carried out by electron holography and scanning capacitance microscopy methods with the same multi-layered p-n junction sample. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.708-712
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• 2004

Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.287-292
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• 1995

단결정 실리콘에 P,B,As 등의 dopant를 이온주입시켰을 때 상부에 스퍼터된 Ti과 고상반응에 의해 형성된 Ti 실리사이드막에 발생되는 blister 현상에 대해 조사했다. Dopant에 관계없이 dose양이 많을수록 Ti 실리사이드막에서 blister의 크기와 밀도가 증가한다. 실리콘 표면에 dopant를 주입한 후 열처리를 하여 damage를 줄여줌으로써 blister의 양을 줄일수 있었다. 이 때 열처리온도가 높을수록 blister의 수가 감소한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.377-385
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• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1475-1482
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• 2011

New spiro[benzo[c]fluorene-7,9'-fluorene] (SBFF)-based blue host materials, 9-phenyl-SBFF (BH-4P) and 5,9-diphenyl-SBFF (BH-6DP), were successfully prepared by spiro-formation of 9-phenyl-7H-benzo[c]fluoren-7-one with 2-bromobiphenyl via lithiation and reaction of 5,9-dibromo-SBFF with phenylboronic acid through the Suzuki reaction, respectively. Diphenyl-[4-(2-[1,1;4,1]terphenyl-4-yl-vinyl)-phenyl]-amine (BD-1) and N,N-diphenyl-N',N'-diphenyl-SBFF-5,9-diamine (BD-6DPA) were used as dopant materials. Blue OLEDs with the configuration ITO/N,N'-bis-[4-(di-m-tolylamino)phenyl]-N,N'-diphenylbiphenyl-4,4'-diamine (DNTPD)/bis[N-(1-naphthyl)-N-phenyl]benzidine (NPB)/host:5% dopant/SFC-137/Al-LiF were prepared from the two host materials doped with BD-1 and BD-6DPA dopants and the devices composed of BH-4P and BH-6DP doped with BD-6DPA showed blue EL spectra at 458 and 463 nm at 7 V and luminance efficiencies of 4.58 and 4.88 cd/A, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.346-349
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• 2009

We investigated the doping effects of $ReO_3$ in different p-type organic semiconductors on the formation of charge transfer complexes and the electrical conductivity by comparing the absorption in ultraviolet-visible-nearinfrared (UV-Vis-NIR) and the current density-voltage characteristics of the hole only devices, respectively. The large energy difference between the HOMO level of host and Fermi energy level of dopant (${\Delta}E$=$E_{HOHO,host}$ - $E_{F,dopant}$) gives higher concentration of CT complexes and enhanced conductivity.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.392-397
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• 2017

알칼리 금속을 도핑한 $BaSi_2$의 p-type 특성에 대하여 이해하기 위하여 density functional theory(DFT) 방법을 바탕으로 하는 결함 계산을 진행하였다. 우선 $BaSi_2$의 Si, Ba vacancies에 대해 계산을 진행하여서 도핑을 하지 않았을 때의 특성에 대해 이해해 보았다. 다음으로 알칼리 금속을 도핑한 구조의 p-type 특성과 비교 분석을 진행하기 위해서 잘 알려진 p-type dopants인 Al, In, Ag을 치환형으로 도핑한 구조의 특성에 대해 분석해 보았다. 마지막으로 알칼리 금속을 도핑하였을 때의 p-type 특성에 대해 계산해 보았고, K을 도핑하였을 때 잘 알려진 p-type dopants보다 더 나은 p-type 특성을 가질 수 있음을 보였다.