• 제목/요약/키워드: p-FET

검색결과 179건 처리시간 0.03초

FET센서 감도 향상 측정을 위한 최적화 (Optimization for Higher Sensitive Measurements of FET-type Sensors)

  • 손영수
    • 공업화학
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    • 제26권1호
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    • pp.116-119
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    • 2015
  • 전계 효과 트랜지스터(FET) 기반의 이온 또는 바이오센서에 대한 연구는 지금까지 활발하게 이루어지고 있다. 본 논문에서는 여러 가지 측정 방법 중에 FET 게이트 절연체 위의 감지막과 이온 또는 생분자의 상호작용으로 전하 분포의 변화가 일어나면 이로 인해 드레인 전류의 변화를 측정하는 방법을 기반으로, 동일한 입력 신호, 즉 동일한 이온 또는 생분자의 농도에 대해 최적의 출력 신호를 얻기 위한 방법에 대해 논의한다. 대표적인 FET 센서는 이온 감지 FET (ISFET)로 본 논문에서는 pH를 측정하는 센서를 이용하였다. ISFET는 게이트 전압 대신 기준전극 전압을 가하는데 이 기준전극 전압과 드레인 전류의 관계식을 측정하여, 가장 기울기가 큰 곳을 찾아 이를 기준으로 동작범위에서의 입력 변화에 대해 출력 신호인 포화영역에서 드레인 전류의 변화가 큰 조건을 설정해 보았다.

[18F]FET PET is a useful tool for treatment evaluation and prognosis prediction of anti-angiogenic drug in an orthotopic glioblastoma mouse model

  • Kim, Ok-Sun;Park, Jang Woo;Lee, Eun Sang;Yoo, Ran Ji;Kim, Won-Il;Lee, Kyo Chul;Shim, Jae Hoon;Chung, Hye Kyung
    • Laboraroty Animal Research
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    • 제34권4호
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    • pp.248-256
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    • 2018
  • O-2-$^{18}F$-fluoroethyl-l-tyrosine ($[^{18}F]FET$) has been widely used for glioblastomas (GBM) in clinical practice, although evaluation of its applicability in non-clinical research is still lacking. The objective of this study was to examine the value of $[^{18}F]FET$ for treatment evaluation and prognosis prediction of anti-angiogenic drug in an orthotopic mouse model of GBM. Human U87MG cells were implanted into nude mice and then bevacizumab, a representative anti-angiogenic drug, was administered. We monitored the effect of anti-angiogenic agents using multiple imaging modalities, including bioluminescence imaging (BLI), magnetic resonance imaging (MRI), and positron emission tomography-computed tomography (PET/CT). Among these imaging methods analyzed, only $[^{18}F]FET$ uptake showed a statistically significant decrease in the treatment group compared to the control group (P=0.02 and P=0.03 at 5 and 20 mg/kg, respectively). This indicates that $[^{18}F]FET$ PET is a sensitive method to monitor the response of GBM bearing mice to anti-angiogenic drug. Moreover, $[^{18}F]FET$ uptake was confirmed to be a significant parameter for predicting the prognosis of anti-angiogenic drug (P=0.041 and P=0.007, on Days 7 and 12, respectively, on Pearson's correlation; P=0.048 and P=0.030, on Days 7 and 12, respectively, on Cox regression analysis). However, results of BLI or MRI were not significantly associated with survival time. In conclusion, this study suggests that $[^{18}F]FET$ PET imaging is a pertinent imaging modality for sensitive monitoring and accurate prediction of treatment response to anti-angiogenic agents in an orthotopic model of GBM.

신경회로망을 이용한 다중채널 FET형 전해질 센서의 신호처리 (Signal processing of multichannel FET type electrolyte sensors using neural network)

  • 이정민;이창수;손병기;이은석;이흥락
    • 전자공학회논문지S
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    • 제34S권11호
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    • pp.148-155
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    • 1997
  • Ths signal processing technqiue of FET type electrolyte sensors using the back propagation neural network was studied to reduce the interference effects of the different electrolytes. The FET-type electrolyte sensors, pH-ISFET, K-ISFET, and Ca-ISFET, were prepared to measure the pH, K, and Ca electrolytes. Neural network consisted of three layers was learned with 8 patterns and 9 patterns. The sensor output obtained with arbitrary concentrations was processed by the learned neural network. The errors obtained from calibration curve for pH, K, and Ca were .+-.0.039 pH, .+-.2.508 mmol/l, and .+-.1.807 mmol/l, respectively, without considering the interference effects. The errors of the network output for pH, K, and Ca were reduced to .+-.0.005 pH, .+-.0.436 mmol/l, and .+-.0.381 mmol/l in case of 9 patterns, respectively. the signal processing using the neural network can reduce the errors ofthe electrolyte sensor outputs caused by the interference effect, thereby providing effectiveness in the improvement of the sensor selectivity.

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빛을 이용한 Ambipolar 실리콘 나노와이어 FET의 모듈래이션 (The modulation of an ambipolar silicon nanowire FET through illumination)

  • 이경건;이국녕;이민호;정석원
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1708-1709
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    • 2011
  • 본 논문에서는 Ambipolar 실리콘 나노와이어 FET (SiNW FET)의 빛을 통한 모듈래이션을 분석하였다. Ambipolar SiNW FET를 얻기 위해서는 나노와이어가 저농도로 도핑된 실리콘이어야 한다. 실리콘의 비등방성 습식식각 이후, 산화 공정을 통한 나노와이어 제작을 통해 보론의 확산을 통해 저농도로 도핑된 실리콘 나노와이어를 제작하였다. 빛이 조사될 시에 생기는 Ambipolar SiNW FET의 모듈래이션 특성에 관해 분석하고 간단한 응용 실험을 통하여 검증하였다. 응용 실험 결과 pH 센싱의 감도는 빛을 10000 lux 조사할 경우 8.84 배 증가하였다.

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Threshold Voltage Properties of OFET with CuPc Active Material

  • Lee, Ho-Shik;Kim, Seong-Geol
    • Journal of information and communication convergence engineering
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    • 제13권4호
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    • pp.257-263
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    • 2015
  • In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO2 as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at VDS = -80 V.

뇌종양진단에 있어 18F-FET Brain PET/CT의 유용성에 대한 고찰 (Consideration of the Usefulness of 18F-FET Brain PET/CT in Brain Tumor Diagnosis)

  • 연규호;류재광
    • 핵의학기술
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    • 제28권1호
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    • pp.41-47
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    • 2024
  • Purpose: 18F-FET, a radiopharmaceutical based on a Tyrosine amino acid derivative using the Sodium-Potassium Pump-independent Transporter (System L) for non-invasive evaluation of primary, recurrent, and metastatic brain tumors, exhibits distinct characteristics. Unlike the widely absorbed 18F-FDG in both tumor and normal brain tissues, 18F-FET demonstrates specific uptake only in tumor tissue while almost negligible uptake in normal brain tissue. This study aims to compare and evaluate the usefulness of 18F-FDG and 18F-FET Brain PET/CT quantitative analysis in brain tumor diagnosis. Materials and Methods: In 46 patients diagnosed with brain gliomas (High Grade: 34, Low Grade: 12), Brain PET/CT scans were performed at 40 minutes after 18F-FDG injection and at 20 minutes (early) and 80 minutes (delay) after 18F-FET injection. SUVmax and SUVpeak of tumor areas corresponding to MRI images were measured in each scan, and the SUVmax-to-SUVpeak ratio, an indicator of tumor prognosis, was calculated. Differences in SUVmax, SUVpeak, and SUVmax-to-SUVpeak ratio between 18F-FDG and 18F-FET early/delay scans were statistically verified using SPSS (ver.28) package program. Results: SUVmax values were 3.72±1.36 for 18F-FDG, 4.59±1.55 for 18F-FET early, and 4.12±1.36 for 18F-FET delay scans. The highest SUVmax was observed in 18F-FET early scans, particularly in HG tumors (4.85±1.44), showing a slightly more significant difference (P<0.0001). SUVpeak values were 3.33±1.13 for 18F-FDG, 3.04±1.11 for 18F-FET early, and 2.80±0.96 for 18F-FET delay scans. The highest SUVpeak was in 18F-FDG scans, while the lowest was in 18F-FET delay scans, with a more significant difference in HG tumors (P<0.001). SUVmax-to-SUVpeak ratio values were 1.11±0.09 for 18F-FDG, 1.54±0.22 for 18F-FET early, and 1.48±0.17 for 18F-FET delay scans. This ratio was higher in 18F-FET scans for both HG and LG tumors (P<0.0001), but there was no statistically significant difference between 18F-FET early and delay scans. Conclusion: This study confirms the usefulness of early and delay scans in 18F-FET Brain PET/CT examinations, particularly demonstrating the changes in objective quantitative metrics such as SUVmax, SUVpeak, and introducing the SUVmax-to-SUVpeak ratio as a new evaluation metric based on the degree of tumor malignancy. This is expected to further contributions to the quantitative analysis of Brain PET/CT images.

Low-Power Fully Digital Voltage Sensor using 32-nm FinFETs

  • Nguyen, H.V.;Kim, Youngmin
    • IEIE Transactions on Smart Processing and Computing
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    • 제5권1호
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    • pp.10-16
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    • 2016
  • In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

불 균등한 LDMOS FET를 이용한 고 출력 도허티 증폭기의 효율 확장에 관한 연구 (A Study on Efficiency Extension of a High Power Doherty Amplifier Using Unequal LDMOS FET's)

  • 황인홍;김종헌
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2005년도 종합학술발표회 논문집 Vol.15 No.1
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    • pp.81-86
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    • 2005
  • In this paper, we present an efficiency extension of Doherty power amplifier using LDMOS FET devices with different peak output powers and an unequal power divider. The amplifier is designed by using a MRF21045 with P1 dB of 45 W as the main amplifier biased for Class-AB operation and a MRF21090 with P1 dB of 90 W as the peaking amplifier biased for Class-C operation. The input power is divided into a 1:1.5 power ratio between the main and peaking amplifier. The simulated results of the proposed Doherty amplifier shows an efficiency improvement of approximately 19 % in comparison to the class-AB amplifier at an output power of 42.5 dBm. The fabricated Doherty amplifier obtained a PAE of 33.68 % at 9 dB backed off from P1 dB of 51.5 dBm.

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SiGe p-FinFET의 C-V 특성을 이용한 평균 계면 결함 밀도 추출과 Terman의 방법을 이용한 검증 (Extraction of Average Interface Trap Density using Capacitance-Voltage Characteristic at SiGe p-FinFET and Verification using Terman's Method)

  • 김현수;서영수;신형철
    • 전자공학회논문지
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    • 제52권4호
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    • pp.56-61
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    • 2015
  • 고주파에서 이상적인 커패시턴스-전압 곡선과 결함이 존재하여 늘어진 커패시턴스-전압 곡선을 SiGe p-FinFET 시뮬레이션을 이용하여 보였다. 두 곡선이 게이트 전압 축으로 늘어진 전압 차이를 이용하여 평균적인 계면 결함 밀도를 구할 수 있었다. 또한 같은 특성을 이용하는 Terman의 방법으로 에너지에 따른 계면 결함 밀도를 추출하고, 동일한 에너지 구간에서 평균값을 구하였다. 전압 차이로 구한 평균 계면 결함 밀도를 Terman의 방법으로 구한 평균값과 비교하여, 두 방법의 결과가 거의 비슷한 평균 계면 결함 밀도를 나타낸다는 것을 검증하였다.

FET형 용존산소 센서 어레이 측정시스템 (A Dissolved Oxygen Measurement System Using FET-type Dissolved Oxygen Sensor Array)

  • 정훈;손병기
    • 센서학회지
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    • 제10권4호
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    • pp.259-265
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    • 2001
  • FET형 용존산소 센서는 pH-ISFET를 기본 소자로하여 pH 감지 게이트 근처에 백금으로 된 작업 전극을 형성한 구조를 가지고 있다. 작업전극에 특정한 전위를 인가하면 전기분해로 인하여 용존산소의 농도에 비례하는 수소 이온이 pH 감지 게이트 주변에 발생된다. 따라서 pH-ISFET를 통하여 수소 이온 농도의 변화량을 검출하면 용존산소의 농도를 측정할 수 있게된다. 본 논문에서는 이러한 FET형 용존산소 센서를 어레이 형태로 제작하여 적용하고 측정의 신뢰성을 높이기 위한 알고리즘을 도입한 FET형 용존산소 센서 어레이 측정 시스템을 개발하였다. 또한 상용 용존산소 측정기와 그 성능을 비교 분석하였다.

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