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http://dx.doi.org/10.5573/ieie.2015.52.4.056

Extraction of Average Interface Trap Density using Capacitance-Voltage Characteristic at SiGe p-FinFET and Verification using Terman's Method  

Kim, Hyunsoo (School of Electrical Engineering and Computer Science, Seoul National University)
Seo, Youngsoo (School of Electrical Engineering and Computer Science, Seoul National University)
Shin, Hyungcheol (School of Electrical Engineering and Computer Science, Seoul National University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.52, no.4, 2015 , pp. 56-61 More about this Journal
Abstract
Ideal and stretch-out C-V curve were shown at high frequency using SiGe p-FinFET simulation. Average interface trap density can be extracted by the difference of voltage axis on ideal and stretch-out C-V curve. Also, interface trap density(Dit) was extracted by Terman's method that uses the same stretch-out of C-V curve with interface trap characteristic, and average interface trap density was calculated at same energy level. Comparing the average interface trap density, which was found by method using difference of voltage, with Terman's method, it was verified that the two methods almost had the same average interface trap density.
Keywords
SiGe; p-FinFET;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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