1 |
Kyong Taek Lee, Min Sang Park, Chang Yong Kang, Yoon-Ha Jeong, "A Study on Carrier Injection Velocity in sub-100nm SiGe Channel pMOSFETs Using RF C-V Measurement," 2010 IEIE Sumer Conference, pp. 597-598, June 2010.
|
2 |
Muhammad Nawaz, Mikael Ostling, "A Design Evaluation of Strained Si-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs," JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol. 8, No. 3, pp. 136-147, June 2005.
|
3 |
Paek Seung Hyuck, Shim Tae Hun, Moon Joon Seok, Cha Won Jun, and Paek Jae Gun, "Effect of Ge mole fraction and Strained Si Thickness on Electron Mobility of FD n-MOSFET fabricated on Strained Si/Relaxed SiGe/SiO2/Si," Journal of The Institute of Electronics Engineers of Korea, Vol. 41-SD, No. 10, pp. 1-7, October 2004.
|
4 |
Jakub Walczak, Bogdan Majkusiak, "Theoretical Study of Electron Mobility in Double-Gate Field Effect Transistors with Multilayer (strained-)Si/SiGe Channel," JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol. 8, No. 3, pp. 264-275, September 2008.
DOI
ScienceOn
|
5 |
Y-J Song, J-W Lim, S-H Kim, H-C Bae, J-Y Kang, K-W Park, K-H Shin, "Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs," Solid-State Electronics, 46, pp. 1983-1989, 2002.
DOI
ScienceOn
|
6 |
I. Ok, K. Akarvardar, S. Lin, M.Baykan, C. D. Young, P. Y. Hung, M. P. Rodgers, S. Bennett, H. O. Stamper, D. L. Franca, J. Yum, J. P. Nadeau, C. Hobbs, P. Kirsch, P. Majhi, R. Jammy, "Strained SiGe and Si FinFETs for High Performance Logic with SiGe/Si stack on SOI," IEEE IEDM, pp. 776-779, 2010.
|
7 |
T. Ngai, X. Chen, J. Chen, and S. K. Banerjee, "Improving / SiGe interface of SiGe p-metal.oxide.silicon field-effect transistors using water vapor annealing," Appl. Phys. Lett., Vol. 80, No. 10, pp. 1773-1775, 11 March 2002.
DOI
ScienceOn
|
8 |
D. Veksler, G. Bersuker, L. Morassi1, J. H. Yum, G. Verzellesi1, Wei-E Wang, P. D. Kirsch, "Extraction of interfacial state density in high-k/III-V gate stacks: problems and solutions," IEEE NMDC, National Cheng Kung Univ., Tainan, Taiwan, October 2013.
|
9 |
Synopsys Inc., Mountain View, CA, Version I-2013. 12, 2013.
|
10 |
Sasa Mileusnic, Milos Zivanov and Predrag Habas, "MOS Transistors Characterization by Split C-V Method," in Proc. of CAS2001, Vol. 2, pp. 503-506, October 2001.
|
11 |
D. K. Schroder, Semiconductor material and device characterization, John Wiley & Sons, Inc., pp. 350-352, 2006.
|
12 |
L. M. Terman, "An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes," Solid-State Electronics, Vol. 5, pp. 285-299, 1962.
DOI
ScienceOn
|