• 제목/요약/키워드: p and n-type electrical properties

검색결과 198건 처리시간 0.031초

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

  • Kim, Hogyoung
    • Transactions on Electrical and Electronic Materials
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    • 제17권5호
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    • pp.293-296
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    • 2016
  • Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

다공성 3C-SiC 기반 저항식 수소센서의 제작과 그 특성 (Fabrication of a Porous 3C-SiC Based Resistivity Hydrogen Sensor and Its Characteristics)

  • 김강산;정귀상
    • 센서학회지
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    • 제20권3호
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    • pp.168-171
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    • 2011
  • Porous 3C-SiC(pSiC) samples with different pore diameters were prepared from poly crystalline N-type 3C-SiC by electrochemical anodization. The pSiC surface was chemically modified by the sputtering of Pd and Pt nano-particles as a hydrogen catalyst. Changes in resistance were monitored with hydrogen concentrations in the range of 110 ppm - 410 ppm. The variations of the electrical resistance in the presence of hydrogen demonstrated that Pd and Pt-deposited pSiC samples have the ability to detect hydrogen at room temperature. Regardless of the catalyst, the 25 nm pore diameter samples showed good response and recovery properties. However, the 60 nm samples showed unstable and slow response. It was found that the pore size affects the catalyst reaction and consequently, results in changes of the sensitivity to hydrogen.

Erbium 도핑된 p-GaSe 단결성의 홀 효과 특성 (Hall-effect Properties of Single Crystal Semiconductor p-GaSe Dopes with $Er^{3+}$)

  • 이우선;김남오;손경춘
    • 한국전기전자재료학회논문지
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    • 제13권1호
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    • pp.1-5
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    • 2000
  • Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

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Ampoule-tube 법으로 P와 As을 도핑한 ZnO/Sapphire 박막의 미세구조와 전기적 특성 (The Microstructures and Electrical Properties of ZnO/Sapphire Thin Films Doped by P and As based on Ampouele-tube Method)

  • 유인성;진은미;소병문;박훈배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.120-121
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    • 2006
  • To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. Al sputtering process of ZnO thin films substrate temperature, work pressure respectively is $100^{\circ}C$ and 15 mTorr, and the purity of target is ZnO 5N. The ZnO thin films were in-situ annealed at $600^{\circ}C$, $800^{\circ}C$ in $O_2$ atmosphere. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5{\times}10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAS_2$. Those diffusion was perform at $650^{\circ}C$ during 3hr. We confirmed that p-type properties of ZnO thin films were concerned with dopant sources rather than diffusion temperature.

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V2O5 기반의 금속 산화물 투명 광전소자 (V2O5 Embedded All Transparent Metal Oxide Photoelectric Device)

  • 김상윤;최유림;이경남;김준동
    • 전기학회논문지
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    • 제67권6호
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    • pp.789-793
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    • 2018
  • All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.

마이크로 발전기의 열전박막 설계 (Design of Thermoelectric Films for Micro Generators)

  • 김현세;이양래;이공훈
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회A
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    • pp.1455-1458
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    • 2007
  • In this research, a polycrystalline silicon (poly-Si) film layer for micro thermoelectric generator (TEG) was fabricated. The fabrication process of the thermoelectric poly-Si film layer is explained. The P-type and N-type poly-Si films were fabricated on a tetra ethoxy silane (TEOS) layer with a supporting Si wafer. Seebeck coefficient and electrical conductivity were measured, including the transport properties such as the hall coefficient, hall mobility and carrier concentration. The design parameters for a rapid thermal process (RTP) were decided based on the experimental results. The measured power factors of the P-type and N-type were $21.2\;{\mu}Wm^{-1}K^{-2}$ and $26.7\;{\mu}Wm^{-1}K^{-2}$, respectively.

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PMS-PZT계의 3단자형 필터 특성에 관한 연구 (A Study on Characteristics of dot-ring type Filter of PMS-PZT)

  • 박기엽;송준태
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.753-756
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    • 1992
  • The piezoelectric ceramics of PMS-PZT was made in the radial mode disk. As the results, in the application of filter required conditions: that is, higher-values for piezoelectric properties($K_p$, $Q_m$) and lower-values for stabilities of $F_{\tau}$(temp. coefficient, aging rate), 5PMS-51PT-44PZ composition statified well. This composition was made in the dot-ring type. Asthe results, with increasing $n^2$ both $Q_m$ and S had high values, decreasing $n^2$ both $K_p$ and BW had low values when the diameter of sintered bodies were constant. Therefore, curve of filter characteristic have sharped with increasing $n^2$ and BW broadened with decreasing $n^2$.

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AlN 첨가 SiC 세라믹스의 열전변환특성 (Thermoelectric Properties of AlN-doped SiC Ceramics)

  • 배철훈
    • 대한금속재료학회지
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    • 제50권11호
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    • pp.839-845
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    • 2012
  • The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

Fabrication of p-type FinFETs with a 20 nm Gate Length using Boron Solid Phase Diffusion Process

  • Cho, Won-Ju
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권1호
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    • pp.16-21
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    • 2006
  • A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

비소 고상확산방법을 이용한 MOSFET SOI FinFET 소자 제작 (Fabrication of SOI FinFET devices using Aresnic solid-phase-diffusion)

  • 조원주;구현모;이우현;구상모;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.133-134
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    • 2006
  • A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

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