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http://dx.doi.org/10.5369/JSST.2011.20.3.168

Fabrication of a Porous 3C-SiC Based Resistivity Hydrogen Sensor and Its Characteristics  

Kim, Kang-San (School of Electrical Engineering., University of Ulsan)
Chung, Gwiy-Sang (School of Electrical Engineering., University of Ulsan)
Publication Information
Journal of Sensor Science and Technology / v.20, no.3, 2011 , pp. 168-171 More about this Journal
Abstract
Porous 3C-SiC(pSiC) samples with different pore diameters were prepared from poly crystalline N-type 3C-SiC by electrochemical anodization. The pSiC surface was chemically modified by the sputtering of Pd and Pt nano-particles as a hydrogen catalyst. Changes in resistance were monitored with hydrogen concentrations in the range of 110 ppm - 410 ppm. The variations of the electrical resistance in the presence of hydrogen demonstrated that Pd and Pt-deposited pSiC samples have the ability to detect hydrogen at room temperature. Regardless of the catalyst, the 25 nm pore diameter samples showed good response and recovery properties. However, the 60 nm samples showed unstable and slow response. It was found that the pore size affects the catalyst reaction and consequently, results in changes of the sensitivity to hydrogen.
Keywords
Porous 3C-SiC; Hydrogen sensor; Resistivity type;
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Times Cited By KSCI : 4  (Citation Analysis)
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1 P. K. Sekhar, A. Sine, and S. Bhansali," Effect of varying the nanostructured porous-Si process parameters on the performance of Pd-doped hydrogen sensor", Sens & Actu. B, vol. 127, pp. 74-81, 2007.   DOI   ScienceOn
2 K. J. Jeon, J. M. Lee, E. S. Y. Lee, and W. Y. Lee, "Individual Pd nanowire hydrogen sensors fabricated by electron-beam lithography", Nano Tech. vol. 20, 135502(1)-135502(5), 2009.
3 M Ramanathan, G Skudlarek, H H Wang, and S B Darling, "Crossover behavior in the hydrogen sensing mechanism for palladium ultrathin films,"Nano Tech., vol. 21, pp. 125501(1)-(6), 2010.
4 S. D. Han, "Review and new trends of hydrogen gas sensor technologies", J. Kor. Sens. Soc. vol. 19, no. 2, pp. 67-86, 2010.   과학기술학회마을   DOI   ScienceOn
5 F. Rahimi and A. I. Zad", Characterization of Pd nanoparticle dispersed over porous silicon as a hydrogen sensor", J. Phys. D: Appl. Phys, vol. 40, pp. 7201-7209, 2007.   DOI   ScienceOn
6 M. Mohamad, F. Mustafa, S. F. A. Rahman, M. S. Z. Abidin, N. K. A. Obaidi, A. M. Hashim, A. A. Aziz, and M. R. Hashim", The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT", J. Appl. Sci, vol. 10, pp. 1797-1801, 2010.   DOI
7 D. U. Hong, C. H. Han, S. H. Park, I. J. Kim, J. Gwak, S. D. Han, and H. J. Kim, "Recovery properties of hydrogen gas sensor with Pd/titanate and Pt/titanate nanotubes photo-catalyst by UV radiation from catalytic poisoning of H2S", Curr. Appl. Phys. vol. 9, pp, 172-178, 2009.   DOI   ScienceOn
8 B. Ozpineci, and L. M. Tolbert, " Characterization of SiC Schottky diodes at different temperatures", IEEE Power Electr. Lett, vol. 1, pp. 54-56, 2003.   DOI   ScienceOn
9 G. S. Chung, K. S. Kim, and J. H. Jeoung, "Growth of polycrystalline 3C-SiC thin films for M/NEMS applications by CVD", J. Kor. Sensors. Soc., vol. 16, no. 2, pp. 85-90, 2007.   과학기술학회마을   DOI   ScienceOn
10 G. S. Chung and K. S. Kim", Formation of porous 3C-SiC thin film by anodization with UV-LED", J. Kor. Sensors. Soc., vol. 18, no. 4, pp. 307-310, 2009.   과학기술학회마을   DOI   ScienceOn