Browse > Article
http://dx.doi.org/10.5370/KIEE.2018.67.6.789

V2O5 Embedded All Transparent Metal Oxide Photoelectric Device  

Kim, Sangyun (Photoelectric and Energy Device Application Lab, Multidisciplinary Core Institute for Future Energies, Incheon National University)
Choi, Yourim (Photoelectric and Energy Device Application Lab, Multidisciplinary Core Institute for Future Energies, Incheon National University)
Lee, Gyeong-Nam (Photoelectric and Energy Device Application Lab, Multidisciplinary Core Institute for Future Energies, Incheon National University)
Kim, Joondong (Department of Electrical Engineering, Incheon National University)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.67, no.6, 2018 , pp. 789-793 More about this Journal
Abstract
All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.
Keywords
$V_2O_5$; Photodetector; Photo-response; ZnO; ITO;
Citations & Related Records
연도 인용수 순위
  • Reference
1 A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya,M. Hirano, and H. Hosono, Thin Solid Films, 486, 38, 2005. [DOI: http://dx.doi.org/10.1016/j.tsf.2004.11.223]   DOI
2 C. J. Kim, S. W. Kim, J. H. Lee, J. S. Park, S. I. Kim, J. C. Park, E. H. Lee, J. C. Lee, Y. S. Park, J. H. Kim, S. T. Shin, and U. I. Chung, Appl. Phys. Lett., 95, 252103, 2009. [DOI: http://dx.doi.org/10.1063/1.3275801]   DOI
3 H. S. Kim, M. Patel, H. K. Kim, J. Y. Kim, M. K. Kwon, and J. D. Kim, Mater. Lett, 160, 305, 2015. [DOI: http://dx.doi.org/10.1016/j.matlet.2015.07.142]   DOI
4 J. Liu, X. Wang, Q. Peng, and Y. Li, Adv. Mater. 17, 764, 2005. [DOI: http://dx.doi.org/10.1002/adma.200400993]   DOI
5 D. Barreca, L. Armelao, F. Caccavale, V. Di Noto, A. Gregori, G. Rizzi, and E. Tondello, Chem. Mater. 12, 98, 2000. [DOI: http://dx.doi.org/10.1021/cm991095a]   DOI
6 H. Y. Yu, B. H. Kang, U. Pi, C. Park, S. Choi, and G. Kim, Appl. Phys. Lett. 86, 253102, 2005. [DOI: https://doi.org/10.1063/1.1954894]   DOI
7 R. Ostermann, D. Li, Y. Yin, J. McCann, and Y. Xia, Nano Lett. 6, 1297, 2006. [DOI: https://doi.org/10.1021/nl060928a]   DOI
8 Y. Wang, H. Zhang, W. Lim, J. Lin, and C. Wong, J. Mater. Chem. 21, 2362, 2011. [DOI: https://doi.org/10.1039/C0JM02727H]   DOI
9 D. Su and G. Wang, ACS Nano 7, 11218, 2013. [DOI: https://doi.org/10.1021/nn405014d]   DOI
10 V. Craciun, J. Elders, J.G.E. Gardeniers, and I. W. Boyd, Appl. Phys. Lett., 65, 2963, 1994. [DOI: http://dx.doi.org/10.1063/1.112478]   DOI
11 W. I. Park, J. S. Kim, G. C. Yi, M. H. Bae, and H. J. Lee, Appl. Phys. Lett., 85, 5052, 2004. [DOI: http://dx.doi.org/10.1063/1.1821648]   DOI
12 Kumar, M., Patel, M., Lee, G.-N., Kim, J., ACS Appl. Nano Mater, 2017. [DOI: http://dx.doi.org/10.1021/acsanm.7b00172]
13 Kim, H. S., Kumar, M. D., Park, W. H., Patel, M., Kim, J., Sensors Actuators, A Phys. 253, 35, 2017. [DOI: http://dx.doi.org/10.1016/j.sna.2016.11.020]   DOI
14 H. Kim, C. M. Gilmore, A. Pique, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, and D. B. Chrisey, J.Appl. Phys., 86, 6451, 1999. [DOI: http://dx.doi.org/10.1063/1.371708]   DOI
15 T. Karasawa and Y. Miyata, Thin Solid Films, 223, 135, 1993. [DOI: http://dx.doi.org/10.1016/0040-6090(93)90737-A]   DOI
16 S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura, J. Vac. Sci. Technol. A, 8, 1403, 1990. [DOI: http://dx.doi.org/10.1116/1.576890]   DOI