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http://dx.doi.org/10.4313/TEEM.2016.17.5.293

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes  

Kim, Hogyoung (Department of Visual Optics and Convergence Institute of Biomedical Engineering & Biomaterials, Seoul National University of Science and Technology (Seoultech))
Publication Information
Transactions on Electrical and Electronic Materials / v.17, no.5, 2016 , pp. 293-296 More about this Journal
Abstract
Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.
Keywords
InP; Capacitance; Interface states;
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