Growth of Ga2O3 films on 4H-SiC substrates by metal organic chemical vapor deposition and their characteristics depend on crystal phase (유기 금속 화학 증착법(MOCVD)으로 4H-SiC 기판에 성장한 Ga2O3 박막과 결정 상에 따른 특성)
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- Journal of the Korean Crystal Growth and Crystal Technology
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- v.31 no.4
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- pp.149-153
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- 2021