Growth of Ga2O3 films on 4H-SiC substrates by metal organic chemical vapor deposition and their characteristics depend on crystal phase |
Kim, So Yoon
(Department of Materials Engineering, Korea Maritime and Ocean University)
Lee, Jung Bok (Department of Materials Engineering, Korea Maritime and Ocean University) Ahn, Hyung Soo (Department of Materials Engineering, Korea Maritime and Ocean University) Kim, Kyung Hwa (Department of Materials Engineering, Korea Maritime and Ocean University) Yang, Min (Department of Materials Engineering, Korea Maritime and Ocean University) |
1 | R. Roy, V.G. Hill and E.F. Osborn, "Polymorphism of Ga2O3 and the system Ga2O3-H2O", J. Am. Chem. Soc. 74 (1952) 719. DOI |
2 | S. Geller, "Crystal Structure of β-Ga2O3", J. Chem. Phys. 33 (1960) 676. DOI |
3 | H.H. Tippins, "Optical absorption and photoconductivity in the band edge of beta-Ga2O3", Phys. Rev. 140 (1965) A316. DOI |
4 | M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui and S. Yamakoshi, "Development of gallium oxide power devices: Development of gallium oxide power devices", Phys. Status Solidi A 211 (2014) 21. DOI |
5 | M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui and S. Yamakoshi, "Recent progress in Ga2O3 power devices", Semicond. Sci. Technol. 31 (2016) 034001. DOI |
6 | S.A.O. Russell, A. Perez-Tomas, C.F. McConville, C.A. Fisher, D.P. Hamilton, P.A. Mawby and M.R. Jennings, "Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating", IEEE J. Quantum. Electron. 5 (2017) 256. |
7 | N. Ueda, H. Hosono, R. Waseda and H. Kawazoe, "Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals", Appl. Phys. Lett. 70 (1997) 3561. DOI |
8 | D. Gogova, M. Schmidbauer and A. Kwasniewski, "Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE", CrystEngComm 17 (2015) 6744. DOI |
9 | F. Boschi, M. Bosi, T. Berzina, E. Buffagni, C. Ferrari and R. Fornari, "Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD", J. Korean Cryst. Growth Cryst. Technol. 443 (2016) 25. |
10 | Y. Oshima, E.G. Villora, Y. Matsushita, S. Yamamoto and K. Shimamura, "Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy", J. Appl. Phys. 118 (2015) 085301. DOI |
11 | S. Rafique, L. Han, M.J. Tadjer, J.A. Freitas, N.A. Mahadik and H. Zhao, "Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition", Appl. Phys. Lett. 108 (2016) 182105. DOI |
12 | V.I. Nikolaev, S.I. Stepanov, A.I. Pechnikov, S.V. Shapenkov, M.P. Scheglov, A.V. Chikiryaka and O.F. Vyvenko, "HVPE growth and characterization of epsilon-Ga2O3 film s on various substrates", ECS J. Solid State Sci. Technol. 9 (2020) 045014. DOI |
13 | M. Kracht, A. Karg, J. Schorm ann, M. Weinhold, D. Zink, F. Michel, M. Rohnke, M. Schowalter, B. Gerken, A. Rosenauer, P. J. Klar, J. Janek and M. Eickhoff, "Tinassisted synthesis of ε-Ga2O3 by molecular beam epitaxy", Phys. Rev. Applied 8 (2017) 054002. DOI |
14 | Z. Li and R.C. Bradt, "Thermal expansion of the hexagonal (4H) polytype of SiC", J. Appl. Phys. 60 (1986) 612. DOI |
15 | F. Orlandi, F. Mezzadri, G. Calestani, F. Boschi and R. Fornari, "Thermal expansion coefficients of β-Ga2O3 single crystals", Appl. Phys. Express 8 (2015) 111101. DOI |
16 | M.D. Santia, N. Tandon and J.D. Albrecht, "Lattice thermal conductivity in β-Ga2O3 from first principles", Appl. Phys. Lett. 107 (2015) 041907. DOI |