• 제목/요약/키워드: orthorhombic phase

검색결과 177건 처리시간 0.032초

2차 전지용 $LiMnO_{2}$ 활물질 합성의 전기화학적 특성과 평가 (Electrochemical properties and Estimation of $LiMnO_{2}$ Active Material Synthesis for Secondary Batteries)

  • 위성동;구할본
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.210-215
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    • 2002
  • This thesis is contents on the crystal grown by the solide phase method at $925^{\circ}C$ with orthorhombic structure that $LiMnO_{2}$ active material synthesised with precurse $Mn_{2}O_{3}$ and $LiOH.H_{2}O$ material to get three voltage level. The porosity analysis of the grown crystal in secondary batteries $LiMnO_{2}$ thin film is $1.323E+02\AA$ of the average pore diameter of powder particles and its structure to be taken the pore diameter was prepared. Adding voltage area to get properties of charge and discharge of which experiment result of $LiMnO_{2}$ thin film area 2.2V~4.3V, current and scan speed were 0.1mAh/g and $0.2mV/cm^{2}$ respectively, and properties of the charge and discharge to be got optimum experiment condition parameter and density rate of Li for analyze that unit discharge capacity with metal properties is 87mAh/g was 96.9[ppm] at 670.784[nm] wavelength, and density rate of Mn analyzed 837[ppm] at 257.610[nm]. It can be estimated the quality of thin film that wrong cell reject from the bottle of electrolyte. The results of SEM and XRD were the same that of original researchers.

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EF-TEM을 이용한 비정질 실리카 나노입자의 구조 및 상전이 연구 (Structural Analysis & Phase Transition of Amorphous Silica Nanoparticles Using Energy-Filtering TEM)

  • 박종일;김진규;송지호;김윤중
    • Applied Microscopy
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    • 제34권1호
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    • pp.23-29
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    • 2004
  • 본 연구에서는 에너지 여과장치와 직접 고온 가열 장치를 이용하여 실리카 나노입자의 비정질 구조 분석과 가열실험을 통한 구조변화에 대해 연구하였다. 실리카 나노입자의 전자회절도형은 세 개의 diffuse한 ring으로 구성이 되어 있으며, $900^{\circ}C$의 온도에서 실리카 나노입자는 서서히 결정화가 이루어짐을 알 수가 있었다. 세 개의 diffuse한 ring은 비정질 실리카 구조가 $SiO_4$ tetrahedra가 구조의 기본 단위로 이루어졌으며, 가열에 의해 이들이 점이적으로 tridymite 이상적인 층상 구조로 결정화되어 간다는 것을 이해할 수 있었다. 또한 전자현미경 내의 고진공하에서 $850^{\circ}C$ 이상의 온도 가열로 인해 $SiO_2$로부터 증발된 SiO가 grid에 재증착되는 것을 관찰할 수 있었고, 남아 있는 $SiO_2$는 전기로를 이용한 가열 실험결과와 같이 비정질 구조에서 orthorhombic trydimite로의 결정화가 이루어짐을 알 수 있었다.

AIFeO3 물질의 Mössbauer 분광학적 연구 (Mössbauer Study of AIFeO3)

  • 위지훈;김삼진;김철성
    • 한국자기학회지
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    • 제16권1호
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    • pp.14-17
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    • 2006
  • 졸겔법을 이용하여 $AIFeO_3$ 단일상을 제조하였으며, 그 결정학적 및 자기적 특성을 X선 회절법(XRD), 진동 시료 자화율 측정법(VSM), 뫼스바우어 분광법으로 연구하였다. 결정구조는 공간군이 $Pna2_1$ orthorhombic 구조로 분석되었으며, 격자 상수는 각각 $a_0=4.983\;{\AA},\;b_0=8.554\;{\AA},\;c_0=9.239\;{\AA}$임을 알 수 있었다. VSM을 이용하여 65K에서부터 상온까지 여러 온도 구간에서 자기이력곡선을 측정하였으며, 강자성 특성과 함께 저온영역에서 자기 이력 곡선의 비대칭성이 관측되었다. 온도에 따른 자기모멘트 측정 결과로부터 자기전이온도는 250k로 결정하였다. 뫼스바우어 스펙트럼은 4.2K에서부터 상온까지의 온도 영역에서 측정하였으며, 분석 결과 상온에서 이성질체 이동치는 0.32mm/s로 철의 이온상태가 ferric임을 확인할 수 있었다. 온도변화에 따라 측정된 뫼스바우어 스펙트럼 분석은 온도에 따라 선폭이 증가함이 관측되었는데, 이러한 흡수선의 비대칭적 선폭 증가는 1개의 사면체자리와 3개의 팔면체 자리의 Fe이온 분포와 각 부격자간 자기이방성 에너지 차이에 따른 결과로 해석된다.

결정구조와 이온 분극률에 따른 (Al,Mg,Ta)O2고용체의 마이크로파 유전상수 특성 (Microwave Dielectric constant characteristics or (Al,Mg,Ta)O2 Solid Solutions with Crystal Structure and Ionic Polarizability)

  • 최지원;하종윤;안병국;박용욱;윤석진;김현재
    • 한국전기전자재료학회논문지
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    • 제16권2호
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    • pp.108-112
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    • 2003
  • The calculated and measured dielectric constants of (1-x)(A $l_{1}$2/ T $a_{1}$2/) $O_2$-x(M $g_{1}$3/ T $a_{2}$3/) $O_2$ (0$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (A $l_{1}$2/ T $a_{1}$2/) $O_2$ and (M $g_{1}$3/ T $a_{2}$3/) $O_2$ were orthorhombic and tetragonal trirutile structure, respectively. When (A $l_{1}$2/ T $a_{1}$2/) $O_2$ was substituted by (M $g_{1}$3/ T $a_{2}$3/) $O_2$, the phase transformed to tetragonal structure over 60 mole. Because the total ionic radius of [(Mg+2Ta)/3]$^{4+}$ was slightly bigger than one of [(Al+Ta)/2]$^{4+}$, the lattice parameters increased with an increase of (M $g_{1}$3/ T $a_{2}$3/) $O_2$ substitution. The measured dielectric constant increased with an increase of (M $g_{1}$3/ T $a_{2}$3/) $O_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.

(K0.5Na0.5)NbO3-CaZrO3 계에서 입자모양과 입자성장 거동 (Grain Shape and Grain Growth Behavior in the (K0.5Na0.5)NbO3-CaZrO3 System)

  • 이철이;문경석
    • 한국분말재료학회지
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    • 제29권2호
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    • pp.110-117
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    • 2022
  • The grain growth behavior in the (1-x)K0.5Na0.5NbO3-xCaZrO3 (KNNCZ-x) system is studied as a function of the amount of CZ and grain shape. The (1-x)K0.5Na0.5NbO3-xCaZrO3 (KNNCZ-x) powders are synthesized using a conventional solid-state reaction method. A single orthorhombic phase is observed at x = 0 - 0.03. However, rhombohedral and orthorhombic phases are observed at x = 0.05. The grain growth behavior changes from abnormal grain growth to the suppression of grain growth as the amount of CaZrO3 (CZ) increases. With increasing CZ content, grains become more faceted, and the step-free energy increases. Therefore, the critical growth driving force increases. The grain size distribution broadens with increasing sintering time in KNNCZ-0.05. As a result, some large grains with a driving force larger than the critical driving force for growth exhibit abnormal grain growth behavior during sintering. Therefore, CZ changes the grain growth behavior and microstructure of KNN. Grain growth at the faceted interface of the KNNCZ system occurs via two-dimensional nucleation and growth.

Structural Changes in Isothermal Crystallization Processes of Synthetic Polymers Studied by Time-Resolved Measurements of Synchrotron-Sourced X-Ray Scatterings and Vibrational Spectra

  • Tashiro, Kohji;Hama, Hisakatsu
    • Macromolecular Research
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    • 제12권1호
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    • pp.1-10
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    • 2004
  • The structural changes occurring in the isothermal crystallization processes of polyethylene (PE), poly-oxymethylene (POM), and vinylidene fluoridetrifluoroethylene (VDFTrFE) copolymer have been reviewed on the basis of our recent experimental data collected by the time-resolved measurements of synchrotron-sourced wide-angle (WAXS) and small-angle X-ray scatterings (SAXS) and infrared spectra. The temperature jump from the melt to a crystallization temperature could be measured at a cooling rate of 600-1,000 $^{\circ}C$/min, during which we collected the WAXS, SAXS, and infrared spectral data successfully at time intervals of ca. 10 sec. In the case of PE, the infrared spectral data clarified the generation of chain segments of partially disordered trans conformations immediately after the jump. These segments then became transformed into more-regular all-trans-zigzag forms, followed by the formation of an orthorhombic crystal lattice. At this stage, the generation of a stacked lamella structure having an 800-${\AA}$-long period was detected in the SAXS data. This structure was found to transfer successively to a more densely packed lamella structure having a 400-${\AA}$-long period as a result of the secondary crystallization of the amorphous region in-between the original lamellae. As for POM, the formation process of a stacked lamella structure was essentially the same as that mentioned above for PE, as evidenced from the analysis of SAXS and WAXS data. The observation of morphology-sensitive infrared bands revealed the evolution of fully extended helical chains after the generation of lamella having folded chain structures. We speculate that these extended chains exist as taut tie chains passing continuously through the neighboring lamellae. In the isothermal crystallization of VDFTrFE copolymer from the melt, a paraelectric high-temperature phase was detected at first and then it transferred into the ferroelectric low-temperature phase at a later stage. By analyzing the reflection profile of the WAXS data, the structural ordering in the high-temperature phase and the ferroelectric phase transition to the low-temperature phase of the multi-domain structure were traced successfully.

Polymorphic Phase Transition and Temperature Coefficient of Capacitance of Alkaline Niobate Based Ceramics

  • Bae, Seon-Gi;Shin, Hyea-Gyiung;Sohn, Eun-Young;Im, In-Ho
    • Transactions on Electrical and Electronic Materials
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    • 제14권2호
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    • pp.78-81
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    • 2013
  • $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ (hereafter, No excess NKN) ceramics and $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ with excess $(Na_{0.5}K_{0.5})NbO_3$ (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from $1,100^{\circ}C$ to $1,200^{\circ}C$. Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from $-40^{\circ}C$ to $100^{\circ}C$ was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from $-40^{\circ}C$ to $100^{\circ}C$. Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from $-40^{\circ}C$ to $100^{\circ}C$. Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.

Sol-Gel법으로 제조된 Ta2O5 박막의 유전특성과 누설전류 특성 (Dielectric Properties and Leakage Current Characteristics of Ta2O5 Thin Film Prepared by Sol-Gel Process)

  • 오태성;이창봉;이병찬;오영제;김윤호
    • 한국세라믹학회지
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    • 제29권1호
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    • pp.29-34
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    • 1992
  • Phase transition, dielectric properties, and leakage current characteristics of Ta2O5 thin film fabricated by sol-gel process with tantalum penta-n-butoxide were studied as a function of annealing temperature in O2 atmoshpere. Although Ta2O5 thin film annealed at temperatures below 700$^{\circ}C$ for 1 hr was amorphous, it was crystallized to ${\beta}$-Ta2O5 of orthorhombic phase by annealing at temperatures higher than 750$^{\circ}C$. With increasing annealing temperature from 500$^{\circ}C$ to 900$^{\circ}C$, dielectric constant of sol-gel processed Ta2O5 thin film was changed from 17.6 to 15.3 due to the increase of SiO2 thickness at Ta2O5/Si interface. For Ta2O5 thin film annealed at 500$^{\circ}C$ to 800$^{\circ}C$ for 1 hr in O2 atmosphere, leakage current was remarkably reduced and breakdown strength was increased with higher annealing temperature. For Ta2O5 film annealed at 800$^{\circ}C$, breakdown did not occur even at electric field strength of 30${\times}$105V/cm and leakage current was maintained lower than 10-8A/$\textrm{cm}^2$.

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희토류원소(Y, Nd, Sm, Gd)의 치환에 의한 $Bi_4Ti_3O_{12}$의 결정화학 및 유전물성 (Crystal Chemistry and Dielectric Properties of $Bi_4Ti_3O_{12}$ by the Substitution of Rare Earth Elements (Y, Nd, Sm, Gd))

  • 고태경;방규석
    • 한국세라믹학회지
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    • 제32권10호
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    • pp.1178-1188
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    • 1995
  • Bi4Ti3O12 (BIT) and its rare earth (Y, Nd, Sm, Gd)-substituted derivatives were synthesized using a sol-gel method to investigate their microstructures, cystal structures and electrical properties depending on the subsituted elemetns. Nd- or Sm-substitution into BIT appeared to be favorable, while Y- or Gd-substitution occurred with a pyrochlore phase. This suggests that a smaller trivalent rare earth ion may not be favorable in the structure of BIT. The rare earth derivatives showed that their particle sizes and shapes were considerably different depending on the kinds of substituted elements. Y-substitution resulted in developing a relatively even particle size and a dense microstructure. In structure, they may be similar to the pseudo-orthorhombic BIT but close to a paraelectric tetragonal phase. Their a (or b) axes were shortened, compared to the one of BIT. Such a distortion may result a decrease in the tilting of TiO6. BIT and the derivatives showed that their dielectric constants and losses were 40~120 and less than 0.03, respectively in the frequency range of 1~10 MHz. The dielectric loss of Y-substituted derivative was the lowest one and changed a little to frequency. Curie points were observed in all the derivatives like BIT to suggest that they would be ferroelectric. The temperature stability of the delectric properties of the derivatives below the Curie points were relatively better than the one of BIT.

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BaTiO3 치환에 따른 NaNbO3-LiNbO3 세라믹스의 압전 및 유전특성 (Piezoelectric and Dielectric Properties of NaNbO3-LiNbO3 Ceramics according to the BaTiO3 Substitution)

  • 이상호;류주현;마석범;김성구
    • 한국전기전자재료학회논문지
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    • 제22권3호
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    • pp.205-209
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    • 2009
  • In this study, in order to develop the composition ceramics for lead-free ultrasonic motor, (1-x-0.09)$NaNbO_{3-x}BaTiO_3-0,09LiNbO_3$ ceramics were fabricated using a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $BaTiO_3$ substitution. All the specimens showed orthorhombic phase structure without secondary phase, $BaTiO_3$ substitution enhanced density, dielectric constant(${\epsilon}_r$) and electromechanical coupling factor($k_p$), However, mechanical quality factor was deteriorated. Curie temperature of specimens was observed as about $380^{\circ}C$. At the $BaTiO_3$ substitution of 4 mol%, density, electromechanical coupling factor($k_p$), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of specimen showed the optimum value of $4.493g/cm^3$, 0.236, 175, 70 pC/N, respectively.