• 제목/요약/키워드: on-state resistance

검색결과 1,161건 처리시간 0.036초

Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

  • Reddy, M. Siva Pratap;Kwon, Mi-Kyung;Kang, Hee-Sung;Kim, Dong-Seok;Lee, Jung-Hee;Reddy, V. Rajagopal;Jang, Ja-Soon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권5호
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    • pp.492-499
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    • 2013
  • We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (${\Phi}_{bo}$) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The ${\Phi}_{bo}$ and the series resistance ($R_S$) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density ($N_{SS}$) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density $N_{SS}$ as determined by Terman's method is found to be $2.14{\times}10^{12}\;cm^{-2}\;eV^{-1}$ for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.

CPT결과를 이용한 항타말뚝 지지력 평가를 위한 저항계수 산정 (Estimation of Pile Resistance Factor by CPT Based Pile Capacity)

  • 김대호;이준환;김범주
    • 한국지반공학회논문집
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    • 제21권10호
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    • pp.113-122
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    • 2005
  • 신뢰성 기반의 한계상태설계법(Limit State Design; LSD)의 지반공학적 적용은 세계적으로 확산추세이며, 북미지역의 경우 일부 시방서에 하중 및 저항에 의한 LRFD 설계법이 지반공학적 설계에 적용되고 있다. 그러나 지금까지 제안되어 온 지반공학적 저항계수는 상당히 포괄적인 값이며, 이와 관련된 연구는 아직까지 초기단계라 할 수 있다. 콘관입시험은 대표적인 현장시험으로 특히 말뚝 설계에서 유용하게 활용되고 있으며, 다양한 말뚝 지지력 산정법이 제시되어 왔다. 본 연구에서는 콘관입시험을 이용한 항타 말뚝 지지력 평가를 위한 저항계수를 산정하고자 한다. 이를 위하여 여러 지역에서 수행된 말뚝재하시험과 콘관입시험 결과를 수집하여 확률적 분석을 수행하였으며, 이를 종합하여 저항계수 산정에 적용하였다. 본 연구에서는 전체지지력뿐만 아니라 말뚝의 선단 및 주면 지지력 각각에 대한 저항계수 또한 도출하고자 하였다. 저항계수 산정 결과, 목표신뢰도지수 $2.0{\sim}2.5$의 범위에서 전체지지력에 대한 저항계수 $0.35{\sim}0.55$범위를 나타내었다.

Characteristics of Transient Overvoltages for the Towers with Time Varying Tower Footing Resistance

  • Kwak, Hee-Ro
    • 대한전기학회논문지
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    • 제33권3호
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    • pp.118-124
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    • 1984
  • This paper investigated the characteristics of transient overvoltages on the tower caused by time varying tower footing resistance in the path of lightning stroke current entering earth on transmission lines. The tower with time varying tower footing resistance was simulated and the transient overvoltageson the tower due to lightning stroke current were computer by Nodal Solution Method. From the results, it was found that the determination of the steady state values as a limit of inductive tower footing resistance causes higher transient overvoltages than CFO voltages of insulator strings and V-T characteristics of the insulator strings should be considered for computation of backflashover rate.

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Protection Circuit Module에 최적화된 60 V급 TDMOSFET 최적화 설계에 관한 연구 (Study on Design of 60 V TDMOSFET for Protection Circuit Module)

  • 이현웅;정은식;오름;성만영
    • 한국전기전자재료학회논문지
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    • 제25권5호
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    • pp.340-344
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    • 2012
  • Protected Circuit Module protects battery from over-charge and over-discharge, also prevents accidental explosion. Therefore, power MOSFET is essential to operate as a switch within the module. To reduce power loss of MOSFET, the on state voltage drop should be lowered and the switching time should be shorted. However there is trade-off between the breakdown voltage and the on state voltage drop. The TDMOS can reduce the on state voltage drop. In this paper, effect of design parameter variation on electrical properties of TDMOS, were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get 65% higher breakdown voltage and 17.4% on resistance enhancement.

A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

  • Jung, Eun-Sik;Cho, Yu-Seup;Kang, Ey-Goo;Kim, Yong-Tae;Sung, Man-Young
    • Journal of Electrical Engineering and Technology
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    • 제7권4호
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    • pp.601-605
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    • 2012
  • Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

신뢰성공학에 근거한 하중-강도계수 설계법과 부분안전계수의 개념 및 적용 (The Concepts and the Applications of Load and Resistance Factor Design and Partial Safety Factor Based on the Reliability Engineering)

  • 유연식;김태완;김종인
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회A
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    • pp.309-314
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    • 2007
  • Recently, the LRFD and the PSF based on structural reliability assessment have been applied to NPP designs in behalf of the conventional deterministic design methods. In the risk-informed structural integrity, it is especially possible to optimize design procedures considering cost, manufacturing and maintenance because the structural reliability concepts have confirmed the reliability for which a designer aims. Generally, in order to evaluate the PSF, the LRFD which is the design concept for evaluating safety factors respectively on the limit state function including load and resistance. This study certifies the concept and its applications of the PSF using the LRFD based on the structural reliability engineering.

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Effect of silica fume and polyepoxide-based polymer on electrical resistivity, mechanical properties, and ultrasonic response of SCLC

  • Mazloom, Moosa;Allahabadi, Ali;Karamloo, Mohammad
    • Advances in concrete construction
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    • 제5권6호
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    • pp.587-611
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    • 2017
  • This study focused on the influences regarding the use of polyepoxide-based polymer and silica fume (SF) on the fresh and hardened state properties of self-compacting lightweight concrete (SCLC) along with their impacts on electrical resistance and ultrasonic pulse velocity (UPV). To do so, two series of compositions each of which consists of twelve mixes, with water to binder (W/B) ratios of 0.35 and 0.4 were cast. Three different silica fume/binder ratios of 0, 5%, and 10% were considered along with four different polymer/binder ratios of 0, 5%, 10%, and 15%. Afterwards, the rupture modulus, tensile strength, 14-day, 28-day, and 90-day compressive strength, the UPV and the electrical resistance of the mixes were tested. The results indicated that although the use of polymer could enhance the passing and filling abilities, it could lead to a decrease of segregation resistance. In addition, the interaction of the SF and the polymeric contents enhanced the workability. However, the impacts regarding the use of polymeric contents on fresh state properties of SCLC were more prevalent than those regarding the use of SF. Besides the fresh state properties, the durability and mechanical properties of the mixes were affected due to the use of polymeric and SF contents. In other words, the use of the SF and the polymer enhanced the durability and mechanical properties of SCLC specimens.

비휘발성 SNOSEFT EFFPROM 기억소자의 임피던스 효과에 관한 연구 (A Study on the Impedance Effect of Nonvolatile SNOSEFT EFFPROM Memory Devices)

  • 강창수;김동진;김선주;이상배;이성배;서광열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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    • pp.86-89
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    • 1995
  • In this pacer, The effect of the impedances in SNOSEFT s memory devices has been developed. The effect of source and drain impedances are measuring using the method of the field effect bias resistance in the inner resistance regions of the device structure and external bias resistance. The effect of impedance by source and drain resistance shows according to increasing to the storage of memory charges, shows according to a function of decreasing to the gate voltages, shows the delay of threshold voltages, The delay time of low conductance state and high conductance state by the impedance effect shows 3 [${\mu}$sec] and 1[${\mu}$sec] respectively.

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CMOS 공정으로 구현한 고전압 LDMOSFET의 전기적 특성 (Electrical Characteristics of High-Voltage LDMOSFET Fabricated by CMOS Technology)

  • 박훈수;이영기;권영규
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.201-202
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    • 2005
  • The electrical characteristics of high-voltage LDMOSFET (Lateral Double-diffused MOSFET) fabricated by a CMOS technology were investigated depending on the process and design parameters. The off-state breakdown voltages of n-channel LDMOSFETs were linearly increased with increasing to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times10^{13}/cm^2$ to $1.0\times10^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times, however, the on-resistance was also increased about 76%. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region.

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Presticide Resistance Menagement of Pest and Beneficial Arthropods and More Biologically-Based IPM on Apple

  • Croft, B.A.
    • 한국응용곤충학회지
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    • 제32권4호
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    • pp.373-381
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    • 1993
  • Resistance evolution to organophosphate-based pesticides in apple and pear inhabiting arthropods of western North America extends to many classes of pest and some beneficial species. Resistance management programs to minimize resistance in pests while exploiting it in natural enemies have met with mixed success. Among beneficials, resistances have been exploited mostly among predators of pest mites. Evolution of resistant mites, leafminers, leafhopper, aphids, leafrollers and some internal fruit feeders have led to development of new monitoring methods and means to delay or avoid resistance. But it is resistance to azinphosmethyl in codling moth (Cydia pomonella) that is changing the pest control system and moving it from chemical to biologically-based means. Newly merging IPM system will depend more on use of biological, cultural, behavior and genetic controls. But more selective pesticides also will be needed to augment pheromones, resistant host plants and genetically altered organisms. These more biologically-based tactics will be prone to resistance evolution in pests as well, if used too unilaterally and/or too extensively.

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