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http://dx.doi.org/10.5573/JSTS.2013.13.5.492

Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure  

Reddy, M. Siva Pratap (LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University)
Kwon, Mi-Kyung (School of Electrical Engineering and Computer Science, Kyungpook National University)
Kang, Hee-Sung (School of Electrical Engineering and Computer Science, Kyungpook National University)
Kim, Dong-Seok (School of Electrical Engineering and Computer Science, Kyungpook National University)
Lee, Jung-Hee (School of Electrical Engineering and Computer Science, Kyungpook National University)
Reddy, V. Rajagopal (Department of Physics, Sri Venkateswara University)
Jang, Ja-Soon (LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.13, no.5, 2013 , pp. 492-499 More about this Journal
Abstract
We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (${\Phi}_{bo}$) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The ${\Phi}_{bo}$ and the series resistance ($R_S$) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density ($N_{SS}$) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density $N_{SS}$ as determined by Terman's method is found to be $2.14{\times}10^{12}\;cm^{-2}\;eV^{-1}$ for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.
Keywords
Ru/Ni/n-GaN; series resistance; interface state density; Terman's method;
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