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http://dx.doi.org/10.4313/JKEM.2012.25.5.340

Study on Design of 60 V TDMOSFET for Protection Circuit Module  

Lee, Hyun-Woong (School of Electrical Engineering, Korea University)
Jung, Eun-Sik (School of Electrical Engineering, Korea University)
Oh, Reum (School of Electrical Engineering, Korea University)
Sung, Man-Young (School of Electrical Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.5, 2012 , pp. 340-344 More about this Journal
Abstract
Protected Circuit Module protects battery from over-charge and over-discharge, also prevents accidental explosion. Therefore, power MOSFET is essential to operate as a switch within the module. To reduce power loss of MOSFET, the on state voltage drop should be lowered and the switching time should be shorted. However there is trade-off between the breakdown voltage and the on state voltage drop. The TDMOS can reduce the on state voltage drop. In this paper, effect of design parameter variation on electrical properties of TDMOS, were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get 65% higher breakdown voltage and 17.4% on resistance enhancement.
Keywords
Protected circuit module; TDMOS; Breakdown voltage; On resistance;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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