Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.201-202
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- 2005
Electrical Characteristics of High-Voltage LDMOSFET Fabricated by CMOS Technology
CMOS 공정으로 구현한 고전압 LDMOSFET의 전기적 특성
- Park, Hoon-Soo (Uiduk University) ;
- Lee, Young-Ki (Uiduk University) ;
- Kwon, Young-Kyu (Uiduk University)
- Published : 2005.07.07
Abstract
The electrical characteristics of high-voltage LDMOSFET (Lateral Double-diffused MOSFET) fabricated by a CMOS technology were investigated depending on the process and design parameters. The off-state breakdown voltages of n-channel LDMOSFETs were linearly increased with increasing to the drift region length. For the case of decreasing n-well ion implant doses from