JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

  • Reddy, M. Siva Pratap (LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University) ;
  • Kwon, Mi-Kyung (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kang, Hee-Sung (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kim, Dong-Seok (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Reddy, V. Rajagopal (Department of Physics, Sri Venkateswara University) ;
  • Jang, Ja-Soon (LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University)
  • Received : 2012.05.04
  • Accepted : 2013.06.20
  • Published : 2013.10.31
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Abstract

We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (${\Phi}_{bo}$) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The ${\Phi}_{bo}$ and the series resistance ($R_S$) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density ($N_{SS}$) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density $N_{SS}$ as determined by Terman's method is found to be $2.14{\times}10^{12}\;cm^{-2}\;eV^{-1}$ for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.

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References

  1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, "InGaN-based multi-quantum-well structure laser diodes," Jpn. J. Appl. Phys., vol. 35, pp. L74-L76, 1996. https://doi.org/10.1143/JJAP.35.L74
  2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamda, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Continuous-wave operation of InGaN/GaN/ AlGaN-based laser diodes grown on GaN substrates," Appl. Phys. Lett., vol. 82, no. 16, pp. 2014-2016, 2003. https://doi.org/10.1063/1.1564638
  3. J. Bardeen, " Surface states and rectification at a metal semiconductor contact," Phys. Rev., vol. 71, no. 10, pp. 717-727, 1947. https://doi.org/10.1103/PhysRev.71.717
  4. S. M. Sze, "Physics of Semiconductor Devices," Wiley & Son, 1981.
  5. E. H. Rhoderick, and R. H. Williams, "Metal- Semiconductor Contacts," Clarendon Press, Oxford, 1988.
  6. M. Drechsler, D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano, and I. Akasaki, "Determination of the conduction band electron effective mass in hexagonal GaN," Jpn.J. Appl. Phys., vol. 34, no. 9B, pp. L1178-L1179, 1995.
  7. H. C. Card, and E. H. Rhoderick, "Studies of tunnel MOS diodes I. interface effect in silicon Schottky diodes," J. Phys. D: Appl. Phys., vol. 4, no. 10, pp. 1589-1601, 1971. https://doi.org/10.1088/0022-3727/4/10/319
  8. S. K. Cheung, and N. W. Cheung, "Extraction of Schottky diode parameters from forward currentvoltage characteristics," Appl. Phys. Lett., vol. 49, no. 2, pp. 85-87, 1986. https://doi.org/10.1063/1.97359
  9. H. Norde, "A modified forward I-V plot for Schottky diode with high series resistance," J. Appl. Phys., vol. 50, no. 7, pp. 5052-5053, 1979. https://doi.org/10.1063/1.325607
  10. Zs. J. Horvath, I.Gyuro, M.N. Sallay, and P. Tutto, "Near-interface concentration reduction in n-type Au/Cr GaAs Schottky contacts," Vacuum, vol. 40, no. 1-2. pp. 201-203, 1990. https://doi.org/10.1016/0042-207X(90)90156-S
  11. B.G. Streetman, and S.K. Banerjee, "Solid state electronic devices," Prentice-Hall, Englewood, NJ, 2006.
  12. A. Geozberger, V. Heine, and E.H. Nicollian, "Surfaces states in silicon from charges in the oxide coating," Appl. Phys. Lett., vol. 12, no. 3, pp. 95-98,1968. https://doi.org/10.1063/1.1651913
  13. H. Kanbur, S. Altindal, and A. Tataroglu, "The effect of interface states, excess capacitance and series resistance in the Al/$SiO_2$/p-Si Schottky diodes," Appl. Surf. Sci., vol. 252, no. 5, pp. 1732- 1738, 2005. https://doi.org/10.1016/j.apsusc.2005.03.122
  14. J. Kolnik, and M. Ozvold, "The influence of insertion surface layers on the evaluation of the interface state energy distribution from Schottky diode I-V characteristics," Phys. Stat. Sol. (a),vol. 122, no.2, pp. 583-588, 1990. https://doi.org/10.1002/pssa.2211220219
  15. S. J. Fonash, "A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodes," J. Appl. Phys., vol. 54, no.4, pp.1966-1975, 1983. https://doi.org/10.1063/1.332251
  16. H. H. Tseng, and C. Y. Wu, "A simple technique for measuring the interface-state density of the Schottky barrier diodes using the current-voltage characteristics," J. Appl. Phys., vol. 61, no. 1, pp. 299-304, 1987. https://doi.org/10.1063/1.338820
  17. G. Gomila, and J. M. Rubi, "Relation for the non equilibrium population of the interface states: effects on the bias dependence of the ideality factor," J. Appl. Phys., vol. 81, no. 6, pp. 2674- 2681, 1997. https://doi.org/10.1063/1.364305
  18. G. Gomila, "Effects of interface states on the nonstationary transport properties of Schottky contacts and metal-insulator-semiconductor tunnel diodes," J. Phys. D: Appl. Phys., vol. 32, no. 1, pp. 64-71, 1999. https://doi.org/10.1088/0022-3727/32/1/011
  19. Zs. Horvath, "Evaluation of the interface state energy distribution from Schottky I-V characteristics," J. Appl. Phys., vol. 63, no. 3, pp. 976-978, 1988. https://doi.org/10.1063/1.340048
  20. A. Singh, K. C. Reinhardt, and W. A. Anderson, "InP tunnel metal-insulator-semiconductor devices irradiated with 1 MeV," J. Appl. Phys., vol. 68, no. 10, pp. 4788-4794, 1990. https://doi.org/10.1063/1.346135
  21. M. K. Hudait, and S. B. Krupanidhi, "Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates," Mater. Sci. Eng. B, vol. 87, no. 2, pp. 141-147, 2001. https://doi.org/10.1016/S0921-5107(01)00713-9
  22. L. M. Terman, "An investigation of surface states at a silicon at a silicon/silicon oxide interface employing metal-oxide-silicon diodes," Solid-State Electron., vol. 5, no. 5, pp. 285-299, 1962. https://doi.org/10.1016/0038-1101(62)90111-9

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