• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.555-557
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• 2006

This paper represent improved On-line Turn off Angle control schemes for switched reluctance motors based on current control. For the purpose of the finding optimal commutation switching angle point, it is utilized him on and turn off position calculation with inductance vs. current vs. flux linkage analysis method. The goal of proposed paper is the maximization of the energy conversion per stroke and maximizing efficiency and obtaining approximately flat-topped current waveform. The proposed control scheme is demonstrated on a prototype experimental system.

• Journal of international Conference on Electrical Machines and Systems
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• v.1 no.3
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• pp.397-403
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• 2012

This paper describes a control method of turn-on/off angles to improve the efficiency of the switched reluctance generator(SRG) with a power closed-loop control system, and the inner-loop of the system is current hysteresis control. The SRG control system is constituted by the PI power controller and the two-level current hysteresis controller. By measuring and analyzing the system losses of different reference powers, speeds and turn-on/off angles, selection strategy of optimal turn-on/off angles is discussed. The proposed method is simple, reliable, and easy to achieve.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.579-580
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• 2006

Simple nonoverlapped source/drain-to-gate MOSFETs to suppress GIDL (gate-induced drain leakage) is simulated with SILVACO simulation tool. Changing spacer thickness for adjusting length of Drain to Gate nonoverlapped region, this simulation observes on/off characteristic of nonoverlapped source/drain-to-gate MOSFETs. Off current is dramatically decreased with S/D to gate nonoverlapped length increasing. The result shows that maximum on/off current ratio is achieved by adjusting nonoverlapped length.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.240-242
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• 2013

In this paper, novel Carbon Nanotube Gate-Elongated Tunneling Field Transistor(CNT G-E TFET) is proposed. This proposed device is designed to decrease off-current around 2~6 orders of magnitude compared to the gate-channel size matched TFET. Mechanism of CNT G-E TFET creates additional steps in energy band structure so that off-current can be reduced. Since CNT TFETs show a great probability for tunneling processes and they are beneficial for the overall device performance in terms of switching speed and power consumption, CNT G-E TFET looks pretty much promising.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1292-1294
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• 1993

This paper proposes a new structure of polycrystalline silicon(poly-Si) thin film transistor(TFT) having a thick gate-oxide below the gate edge. The new structure is fabricated by the gate re-oxidation in wet ambient. It is shown that the thick gate-oxide below the gate edge is effective in reducing the leakage current and the gate-drain overlap capacitance. We have simulated this device by using the SSUPREM4 process simulator and the SPISCES-2B device simulator. As a simulation result it is found that the new structure provides a low tentage current less than 0.2 pA and achieves a on/off ratio as high as $5{\times}10^7$.

• The Transactions of the Korean Institute of Power Electronics
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• v.3 no.3
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• pp.222-230
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• 1998

This paper proposes a new gate drive circuit for high power IGBTs which can reduce the harmful effect of reverse recovery current at turn-on and actively suppress the overvoltage across the driven IGBT at turn-off without a snubber circuit. The turn-on scheme decreases the rising rate of the collector current by inereasing the input capacitance at turn-on transient when the gate-emitter voltage goes above threshold voltage. It results in soft transient of the reverse recovery current with no variation in turn-on delay time. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.99-104
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• 2002

lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1025-1028
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• 2005

Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

• 한국해양학회지
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• v.21 no.3
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• pp.136-145
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• 1986

Biotope analysis(UPGM) of the data on the total benthic foraminferal assemblage (Kim and Han, 1982) collected from the southeastern sea off the Korean Peninsula shows that foraminiferal assemblages are related to the water masses prevailing in the study area. South Proper facies is governed by the Tsushima Warm Current, and Southern Deep facies is influenced by the cold water mass moved down along the bottom. Northern Nearshore facies is governed by the North Korea Cold Current, and North Proper facies is affected by the North Korea Cold Current and Japan Sea Proper Water. It is also evident that the upper part of the study area is under the influence of the North Korea Cold Current rather than the East Korea Warm Current which flows northward along/or off the right side of the study area. Planktonic foraminiferal occurrence also supports this biotope analysis.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.351-354
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• 2001

In this paper, we present self-tuning control of switched reluctance motor for maximum torque with phase current and shaft position sensor. Determination method of turn-on/off angle is realized by using self-tuning control method. During the sampling time, micro-controller checks the number of pulse from encoder and compare with the number of pre-checked pulse. After micro-controller calculates between two data, it moves forward or backward turn-off angle. When the turn-off angle is fixed optimal turn-off angle, the turn-on angle automatically moves forward or backward by a step using self-tuning control method. And then, optimal turn-off angle is searched once again. As such a repeating process, turn-on/off angle is moved automatically to obtain the maximum torque. The experimental results are presented to validate the self-tuning algorithm.