EDISON SW 활용 경진대회 논문집 (Proceeding of EDISON Challenge)
- 제2회(2013년)
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- Pages.240-242
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- 2013
Carbon Nanotube Gate-Elongated Tunneling Field Transistor(CNT G-E TFET) to Reduce Off-Current
- Heo, Jae (Dept. of Electrical Eng., KAIST) ;
- Jeon, Seung-Bae (Dept. of Electrical Eng., KAIST)
- 발행 : 2013.04.17
초록
In this paper, novel Carbon Nanotube Gate-Elongated Tunneling Field Transistor(CNT G-E TFET) is proposed. This proposed device is designed to decrease off-current around 2~6 orders of magnitude compared to the gate-channel size matched TFET. Mechanism of CNT G-E TFET creates additional steps in energy band structure so that off-current can be reduced. Since CNT TFETs show a great probability for tunneling processes and they are beneficial for the overall device performance in terms of switching speed and power consumption, CNT G-E TFET looks pretty much promising.
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