• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.256-262
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• 2018

This study introduces a novel Soft Switching (SS) Pulse Width Modulated (PWM) AC-DC boost converter. In the proposed converter, the main switch is turned on with Zero Voltage Transition (ZVT) and turned off with Zero Current Transition (ZCT). The main diode is turned on with Zero Voltage Switching (ZVS) and turned off with Zero Current Switching (ZCS). The auxiliary switch is turned on and off with ZCS. All auxiliary semiconductor devices are turned on and off with SS. There is no extra current or voltage stress on the main semiconductor devices. The majority of switching energies are transferred to the output by auxiliary transformer. Thus, the current stress of auxiliary switch is significantly reduced. Besides, the proposed converter has simple structure and ease of control due to common ground. The theoretical analysis of the proposed converter is verified by a prototype with 100 kHz switching frequency and 500 W output power. Furthermore, the efficiency of the proposed converter is 98.9% at nominal output power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.372-376
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• 2018

The effects of off-state bias stress on the characteristics of p-type poly-Si TFT were investigated. To reduce the gate-induced drain leakage (GIDL) current, the off-state bias stress was changed by varying Vgs and Vds. After application of the off-state bias stress, the Vgs causing GIDL current was dramatically increased from 1 to 10 V, and thus, the Vgs margin to turn off the TFT was improved. The on-current and subthreshold swing in the aged TFT was maintained. We performed a technology computer-aided design (TCAD) simulation to describe the aged characteristics. The aged-transfer characteristics were well described by the local charge trapping. The activation energy of the GIDL current was measured for the pristine and aged characteristics. The reduced GIDL current was mainly a thermionic field-emission current.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.43-53
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• 2007

We have analyzed low current operation characteristics of a VCSEL transmitter operating at fixed Current over wide temperature range. Used 850 nm oxide VCSEL has low temperature dependence of the threshold current and $d^2I_{th}/dT^2$ is approximately $1.346\times10^{-4}mA/^{\circ}C^2$. We fixed on-current so that output power from the chip is 1 mW at $20^{\circ}C$ and investigated the turn-on, turn-off characteristics and eye-diagram of the 850 nm oxide VCSEL transmitter with varying ambient temperature and off-current. We measured rise time, fall time, extinction ratio and timing jitter by changing tile ambient temperature and off-current. With the fixed off-current of around $0.1\sim0.2mA$ lower than the lowest threshold current the transmitter successfully operated at 1.25 Gbps over a wide temperature range from $-20^{\circ}C$ to $80^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.2
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• pp.51-54
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• 2019

The electrodeposition of rhodium (Rh) on silicon substrate at different current conditions were investigated. The cracks were found at high current density during the direct current (DC) plating. The pulse current (PC) plating were applied to avoid the formation of cracks on the deposits. Off time in the pulse plating relieved the residual stress of the Rh deposits and consequently the current conditions for the crack-free Rh deposits were obtained. Optimum pulse current (PC) condition is 5:5 (on:off) for the crack-free Rh electroplating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.15-19
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• 2012

Presented herein are the results of the study that was conducted on the electrical characteristics of organic field-effect transistors based on poly(3-hexylthiophene), particularly the thickness and annealing temperature of their active layer is varied. The changes in field-effect mobility and current on/off ratio were explored. It was observed that both increasing annealing temperature from $60^{\circ}C$ to $100^{\circ}C$ and various concentrations influence the trade-off relations between the mobility and current on/off ratio. The surface morphology of the 2-${\mu}m^2$ area with various thicknesses was scanned via atomic-forcemicroscopy(AFM) to verify the relationship between surface morphology, which is related to the thickness of the film, and device performance.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.12-16
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• 2000

The electrical characteristics of n-channel LDD structured poly-Si TFT's have been systematically investigated. It have been found that the LDD regions act as the effect of series resistance and reducing the electric field. Kink effect is disappeared and off current is greatly reduced, while on current is slightly reduced. On/off current ratio graph shows that LDD device's switching characteristic is better than that of conventional device. As a result of study, it is concluded that the effect of electric field's reduction is more dominant than that of series resistance.

• 한국해양학회지
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• v.11 no.2
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• pp.77-88
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• 1976

The water movements in the south sea of Korea are deduced from the distributions of water properties. In summer the flow path of the Tsushima Current is deflected off from the Korean coast; between the coast and the current there exist eddies. Cyclonic eddies are particularly dominant in the southeastern area of Sorido Is. In winter, the sunken coastal water flows out along the bottom toward the southeast, and compensation is made at the surface by the coastward intrusion of off-shore waters. The so-called coastal counter- current of the area seems to be a cyclonic eddy which prevails in summer and autumn.

• Journal of the Korean institute of surface engineering
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• v.34 no.4
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• pp.303-312
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• 2001

Composition and microstructure of the tin-zinc alloys electroplated in gluconate bath were studied according to pulse current parameters. The cathode current efficiency increased with both the mean current density and the off-time decrease. Zinc content of the alloy deposits increased with increasing mean current density, while it decreased noticebly with increasing the off-time from 10-30ms to 100-150ms. The preferred orientation of the alloy deposits changed with the increase of peak current density in the sequence of (220)longrightarrow(220)+(420) or (220)+(420)+(321) mixed structure. The equiaxed grain size of the alloy increased with the increase of off-time and the decrease of mean current density.

• Biotechnology and Bioprocess Engineering:BBE
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• v.4 no.1
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• pp.46-50
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• 1999

The application of pulsed electric field was investigated in the crossflow ultrafiltration of BSA (bovine serum albumn) to economize the application time of electric current as well as to avoid inherent problems of long-term application of electric field. During the application of various cyclic patterns of pulsed electric current, the averaged filtration flowrate and the degree of concentration were maintained higher than those obtained in the absence of electric current application. The temperature increase, pH change, and BSA loss by electrodeposition were all negligible during the operation. The averaged filtration flowrate increased as the ON/OFF duration ratio of electric current was higher and as the period of ON/OFF cycle was shorter. The re-establishment of concentration polarization was dependent to the duration of current OFF state and, therefore, a longer duration of OFF state was not favorable in maintaining higher filtration flow rate. Although the averaged filtration flowrate was enhanced as the magnitude of electric current increased, the flowrate enhancement became smaller as the magnitude of current value above which the degree of electrokinetic depolarization is no further improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.364-369
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• 2011

Analyzing electrical degradation of polycrystalline silicon transistor to applicable at several environment is very important issue. In this research, after fabricating p channel poly crystalline silicon TFT (thin film transistor) electrical characteristics were compare and analized that changed by gate bias with first measurement. As a result on and off current was reduced by variation of gate bias and especially re duce ratio of off current was reduced by $7.1{\times}10^1$. On/off current ratio, threshold voltage and electron mobility increased. Also, when channel length gets shorter on/off current ratio was increased more and thresh old voltage increased less. It was cause due to electron trap and de-trap to gate silicon oxide by variation of gate bias.