Journal of the Institute of Electronics Engineers of Korea TE (대한전자공학회논문지TE)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Analysis of the Electirical Characteristics on n-channel LDD structured poly-Si TFT's

LDD 구조를 가지는 n-채널 다결정 실리콘 박막 트랜지스터의 전기적 특성 분석

  • Published : 2000.06.01
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Abstract

The electrical characteristics of n-channel LDD structured poly-Si TFT's have been systematically investigated. It have been found that the LDD regions act as the effect of series resistance and reducing the electric field. Kink effect is disappeared and off current is greatly reduced, while on current is slightly reduced. On/off current ratio graph shows that LDD device's switching characteristic is better than that of conventional device. As a result of study, it is concluded that the effect of electric field's reduction is more dominant than that of series resistance.

본 연구는 n-채널 다결정 실리콘 박막 트랜지스터를 LDD 길이에 변화를 주며 제조한 후 이에 따른 전기적인 특성을 분석하였다. LDD 구조를 갖는 소자는 LDD 영역에 의한 직렬저항 효과와 드레인 부근의 전계 감소 효과에 의해서 기존의 구조를 가지는 소자에서 볼 수 있었던 Kink 현상이 사라지게 된다. 또한, on전류의 소폭 감소와 함께 큰 폭의 off 전류 감소가 일어나 on/off 전류비가 기존 구조를 갖는 소자보다 크게 증가하게 된다. 이는 LDD 영역에 의한 직렬저항 효과보다 전계 감소 효과가 더 지배적으로 나타나기 때문으로 사료된다.

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References

  1. Electronic Display Devices S. Matsumoto
  2. IEDM Tech. Dig. Polycrystalline Silicon Thin Film Transistors for Analogue Circuit Applications A. G. Lewis(et al.)
  3. IEEE Trans. Electron Devices v.ED-32 Anomalous Leakage Current in LPCVD Polysilicon MOSFET's J. G. Fossum;A. Ortiz-Conde;H. Shichijo;S. K. Banarjee
  4. IEEE Electron Device Letters v.9 Characteristics of Offset-Structure Polycrystalline-Silicon Thin-Film Transistors K. Tanka;H. Arai;S. Kohda
  5. IEEE Transaction on Electron Devices v.43 The Effect of Drain Offset on Current Voltage Characteristics in Sub-micron Polysilicon Thin-Film Transistors K. R. Olasupo;W. Yarbrough;M. K. Hatalis
  6. IEDM94 Interface Trap Induced Thermionic and Field Emission Current in Off-State MOSFET's Tahui Wang;T. E. Chang;C. M. Huang
  7. IEDM93 Analysis of Leakage Currents in Poly-Silicon Thin Film Transistors M. Hack;I. W. Wu