• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.708-709
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• 2006

New Al-based alloys with very high ultimate tensile strength were developed in high Al concentration range of 91-95 at.% for Al-Fe-Cr-Ti-M (M: Co and Mo) systems and Al-Fe-Cr-Mo-Ti-Co system by the dispersion of nanoscale quasicrystalline particles in Al phase. The effect of adding elements, M was discussed in the viewpoint of stability of super-cooled liquid state and formation ability of quasicrystalline phase. The P/M Al-Fe-Cr-Ti-M alloys with dispersed nanoscale quasicrystalline particles exhibited ultimate tensile strength of 350MPa at 573K and 200MPa at 673K.

• 한국지능시스템학회논문지
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• 제20권6호
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• pp.875-883
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• 2010

We introduce the concept of intuitionistic smooth topology in Lowen's sense and we prove that the family IST(X) of all intuitionistic smooth topologies on a set is a meet complete lattice with least element and the greatest element [Proposition 3.6]. Also we introduce the notion of level fuzzy topology on a set X with respect to an intuitionistic smooth topology and we obtain the relation between the intuitionistic smooth topology $\tau$ and the intuitionistic smooth topology $\eta$ generated by level fuzzy topologies with respect to $\tau$ [Theorem 3.10].

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제14권3호
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• pp.231-239
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• 2014

It presents the concepts of ordinary smooth interior and ordinary smooth closure of an ordinary subset and their structural properties. It also introduces the notion of ordinary smooth (open) preserving mapping and addresses some their properties. In addition, it develops the notions of ordinary smooth compactness, ordinary smooth almost compactness, and ordinary near compactness and discusses them in the general framework of ordinary smooth topological spaces.

• Journal of information and communication convergence engineering
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• 제13권1호
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• pp.56-61
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• 2015

The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1880-1884
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• 2004

To analyze the fluid flow and thermal characteristics in a nanoscale system, the planar Poiseuille flow of a Lennar-Jones liquid through parallel plates formed by fixed atoms is studied using nonequilibrium molecular dynamics simulations. The role of important simulation parameters such as the channel width, the magnitude of external field, the temperatures of the top and bottom plates, and the interaction potential parameter between fluid and wall atoms, which affect flow patterns and heat transfer rate inside the channel, are investigated. Under the various simulation conditions, interesting phenomena deviated from the continuum predictions have found.

• 반도체디스플레이기술학회지
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• 제15권3호
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• pp.1-5
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• 2016

In order to apply sub-resolution assist feature (SRAF) in extreme ultraviolet lithography, the maximum non-printing SRAF width and lithography process margin needs to be improved. Through simulation, we confirmed that the maximum SRAF width of 6% attenuated phase shift mask (PSM) is large compared to conventional binary intensity mask. The increase in SRAF width is due to dark region's reflectivity of PSM which consequently improves the process window. Furthermore, the critical dimension error caused by variation of SRAF width and center position is reduced by lower change in diffraction amplitude. Therefore, we speculate that the margin of SRAF application will be improved by using PSM.

• ETRI Journal
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• 제32권4호
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• pp.530-539
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• 2010

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• Bulletin of the Korean Chemical Society
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• 제28권11호
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• pp.2065-2068
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• 2007

The nanoscale morphologies on a series of new anthraquinone substitutes have been carried out. Among the substitutes, only bis[2-(1-anthraquinonoxy)-ethyl]ether in a mixture of dichloromethane/acetone (1/1) slowly forms uniform nanowires with 80-120 nm diameters. The same compound in a mixture of dichloromethane/tetrahydrofuran (1/1) slowly produces uniform nanobelts with 400-600 nm widths. Thus, both the spacer lengths and the solvent effects of the compounds are important factors for the formation of nanoscale morphologies. The nano patterns seem to be formed by the π-π interactions between the anthraquinone moieties.

• 한국산업정보학회논문지
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• 제18권1호
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• pp.19-24
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• 2013

As CMOS technology is scaled down more aggressively, the reliability mechanism (or aging effect) caused by the diffusion of metal atoms along the conductor in the direction of the electron flow, also called electromigration (EM), has become a major reliability concern. With the present of EM, it is difficult to control the current flows of the MOSFET device and interconnect. In addition, nanoscale CMOS circuits suffer from increased gate leakage current and power consumption. In this paper, the EM effects on current of the nanoscale CMOS circuits are analyzed. Finally, this paper introduces an on-chip current measurement method providing lifetime electromigration management which are designed using 45-nm CMOS predictive technology model.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제12권3호
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• pp.205-214
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• 2012

We study some properties of interval-valued fuzzy normal subgroups of a group. In particular, we obtain two characterizations of interval-valued fuzzy normal subgroups. Moreover, we introduce the concept of an interval-valued fuzzy coset and obtain several results which are analogous of some basic theorems of group theory.