Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Optical Proximity Correction using Sub-resolution Assist Feature in Extreme Ultraviolet Lithography

극자외선 리소그라피에서의 Sub-resolution assist feature를 이용한 근접효과보정

  • 김정식 (한양대학교 공과대학 나노반도체공학과) ;
  • 홍성철 (한양대학교 공과대학 신소재공학과) ;
  • 장용주 (한양대학교 공과대학 나노반도체공학과) ;
  • 안진호 (한양대학교 공과대학 나노반도체공학과)
  • Received : 2016.08.05
  • Accepted : 2016.09.09
  • Published : 2016.09.30
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Abstract

In order to apply sub-resolution assist feature (SRAF) in extreme ultraviolet lithography, the maximum non-printing SRAF width and lithography process margin needs to be improved. Through simulation, we confirmed that the maximum SRAF width of 6% attenuated phase shift mask (PSM) is large compared to conventional binary intensity mask. The increase in SRAF width is due to dark region's reflectivity of PSM which consequently improves the process window. Furthermore, the critical dimension error caused by variation of SRAF width and center position is reduced by lower change in diffraction amplitude. Therefore, we speculate that the margin of SRAF application will be improved by using PSM.

Keywords

References

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