[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.6109/jicce.2015.13.1.056

High-Aspect-Ratio Nanoscale Patterning in a Negative Tone Photoresist

Ryoo, Kwangki (Department of Information & Communication Engineering, Hanbat National University)
Lee, Jeong Bong (Department of Information & Communication Engineering, Hanbat National University)

Publication Information

Journal of information and communication convergence engineering / v.13, no.1, 2015 , pp. 56-61 More about this Journal

Abstract

The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

Keywords

Electron beam lithography; High aspect ratio; Nanoimprint lithography; Negative photo resist;

Citations & Related Records

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