• 한국자기학회지
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• 제16권3호
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• pp.163-167
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• 2006

초음파 조사 및 계면활성제 첨가에 따른 입자의 변화를 연구하기 위하여 침전법, 음향화학적 침전법 그리고 게면활성제를 첨가한 음향화학적 침전법으로 나노 입자를 합성하였고, X-선 회절실험을 통하여 마그네타이트가 합성된 것을 확인하였다. 침전법, 음향화학적 침전법으로 합성한 입자의 크기는 계면활성제를 첨가한 음향화학적 침전법으로 합성한 입자보다 크게 얻어졌고, 초음파 출력이 증가 할수록 크기는 증가하였다. 계면활성제로 올레인 산을 첨가한 음향화학적 기법에서는 게면활성제의 농도에 따라 입자 크기를 선택적으로 조절하여 합성할 수 있었고, 단순 침전법이나 음향화학적 기법에서 보다 생성되는 입자의 크기 분포가 좁게 나타났다. 마그네타이트 나노 입자들의 자기적 특성을 SQUID를 통하여 분석한 결과, 실온에서 모두 초상자성 거동을 보이는 것으로 나타났다.

• Elastomers and Composites
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• 제45권2호
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• pp.80-86
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• 2010

탄소나노튜브는 우수한 기계적 특성, 전기적 및 자기적 성질 뿐만 아니라 나노 크기의 직경 및 높은 종횡비를 나타낸다. 이는 고강도 고분자 복합체의 이상적인 보강제로 사용할 수 있다. 기능성이 부과된 탄소나노튜브는 기능성 재료 및 복합재료의 제조와 같은 분야에서 아주 유력한 재료로 믿어진다. 탄소나노튜브-고분자 복합체는 탄소나노튜브의 우수한 기능성과 고분자의 우수한 가공성을 가질 것으로 기대된다. 그러나, 탄소나노튜브는 보통 반 델 바알스 작용에 의한 안정화된 번들을 형성하기 때문에 고분자 기지에 배열이나 분산이 상당히 어렵다. 탄소나노튜브 강화복합체의 제조에서 가장 큰 이슈는 고분자내에 탄소나노튜브의 효과적인 분산이며, 기지내에 탄소나노튜브의 배열과 양의 조절이다. 고분자 기지내에 탄소나노튜브의 분산은 용액혼합, 벌크 혼합, 용융혼합, 즉시 고분자화 반응 및 탄소나노튜브의 화학적 기능화 등과 같은 몇 가지 방법이 있다. 본 논평에서는 이들 방법과 고성능 탄소나노튜브-고분자 복합체의 제조에 대하여 서술하고자 한다.

• 한국분말재료학회지
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• 제15권6호
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• pp.482-488
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• 2008

The indentation technique has been one of the most commonly used techniques for the measurement of the mechanical properties of materials due to its experimental ease and speed. Recently, the scope of indentation has been enlarged down to the nanometer range through the development of instrumentations capable of continuously measuring load and displacement. In addition to testing hardness, the elastic modulus of submicron area could be measured from an indentation load-displacement (P-h) curve. In this study, the hardness values of the constituent phases in Ti($C_{0.7}N_{0.3}$)-NbC-Ni cermets were evaluated by nanoindentation. SEM observation of the indented surface was indispensable in order to separate the hardness of each constituent phase since the Ti($C_{0.7}N_{0.3}$)-based cermets have relatively inhomogeneous microstructure. The measured values of hardness using nanoindentation were ${\sim}20$ GPa for hard phase and ${\sim}10$ GPa for binder phase. The effect of NbC addition on hardness was not obvious in this work.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.159-167
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• 2005

Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

• Bulletin of the Korean Chemical Society
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• 제31권10호
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• pp.2923-2928
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• 2010

This study examined the synthesis of the crystal structure of bis(2,2'-bipyridine)nitrato zinc (II) nitrate, $[Zn(bipy)_2(NO_3)]^+NO_3^-$ using a microwave treatment at 300 W and 60 Hz for the application to dye-sensitized solar cells. The simulated complex structure of the complex was optimized with the density functional theory calculations for the UV-vis spectrum of the ground state using Gaussian 03 at the B3LYP/LANL2DZ level. The structure of the acquired complex was expected a penta-coordination with four nitrogen atoms of bipyridine and the oxygen bond of the $NO_3^-$ ion. The reflectance UV-vis absorption spectra exhibited two absorptions (L-L transfers) that were assigned to the transfers from the ligand ($\sigma$, $\pi$) of $NO_3$ to the ligand ($\sigma^*$, $\pi^*$) of pyridine at around 200 - 350 nm, and from the non-bonding orbital (n) of O in $NO_3$ to the p-orbital of pyridine at around 450 - 550 nm, respectively. The photoelectric efficiency was approximately 0.397% in the dye-sensitized solar cells with the nanometer-sized $TiO_2$ at an open-circuit voltage (Voc) of 0.39 V, a short-circuit current density (Jsc) of $1.79\;mA/cm^2$, and an incident light intensity of $100\;mW/cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.132-132
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• 2008

Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.

• 대한기계학회논문집B
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• 제35권11호
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• pp.1147-1156
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• 2011

CLECDiS 는 면적변화형 정전용량 센서의 단점을 극복하고 나노미터 수준의 분해능으로 밀리미터 이상의 큰 변위를 측정하도록 개발된 접촉식 변위센서이다. 그러나 접촉구동 특성으로 인하여 표면평탄도와 마찰에 의해 작은 접촉상태의 변화에도 출력 신호는 크게 왜곡될 수 있어 실제 이를 활용하기 위해서는 전극간 접촉상태를 안정적으로 유지하는 것이 중요하다. 이에 본 연구에서는 전극간 접촉상태의 변화에 따른 신호의 왜곡 특성을 실제 출력 신호와 비교하여 분석하고, 접촉면 내 압력 분포와 센서의 운동 오차 측정을 통해 접촉상태의 변화를 파악하였다. 이를 통하여 센서의 운동 오차와 마찰력의 영향을 최소화하기 위한 접촉 유지 기구를 설계하고 제작하였으며 이를 이용한 구동실험을 통해 보다 안정적인 센서 출력 신호를 획득하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권2호
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• pp.95-103
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• 2011

This paper proposes a 6b 1.2 GS/s 47.8 mW 0.17 $mm^2$ 65 nm CMOS ADC for high-rate wireless personal area network systems. The proposed ADC employs a source follower-free flash architecture with a wide input range of 1.0 $V_{p-p}$ at a 1.2 V supply voltage to minimize power consumption and high comparator offset effects in a nanometer CMOS technology. The track-and-hold circuits without source followers, the differential difference amplifiers with active loads in pre-amps, and the output averaging layout scheme properly handle a wide-range input signal with low distortion. The interpolation scheme halves the required number of pre-amps while three-stage cascaded latches implement a skew-free GS/s operation. The two-step bubble correction logic removes a maximum of three consecutive bubble code errors. The prototype ADC in a 65 nm CMOS demonstrates a measured DNL and INL within 0.77 LSB and 0.98 LSB, respectively. The ADC shows a maximum SNDR of 33.2 dB and a maximum SFDR of 44.7 dB at 1.2 GS/s. The ADC with an active die area of 0.17 $mm^2$ consumes 47.8 mW at 1.2 V and 1.2 GS/s.

• 청정기술
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• 제18권4호
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• pp.355-359
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• 2012

본 연구에서는 보다 효율적인 광 전기화학적 수소제조를 위하여 광촉매로써 산화텅스텐에 티타늄을 함침하여 $Ti/WO_3$ 나노입자를 제조하였다. 제조한 $Ti/WO_3$의 물리적 특성은 X-선 회절분석법(XRD), 주사전자현미경(SEM), 발광분광계(PL), 원자간력 현미경(AFM), 정전기 현미경(EFM)을 통해 확인하였다. 메탄올/물 (1/1) 광분해 수소제조 실험 결과, 순수 아나타제 티타니아나 산화텅스텐 광촉매보다 $Ti/WO_3$ 광촉매에서 촉매활성이 향상되었으며, 0.5 g의 0.10 mol % $Ti/WO_3$ 촉매를 사용한 경우 8시간 반응 시 3.02 mL의 수소가 발생되었다.