• Journal of the Korean institute of surface engineering
• /
• v.43 no.2
• /
• pp.47-50
• /
• 2010

This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.659-662
• /
• 2007

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.1
• /
• pp.14-20
• /
• 2018

Lead zinc niobate (PZN) added lead zirconate titanate (PZT) thick films with thickness of $5{\sim}10{\mu}m$ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and 40 %. The initial particles (PZT, 2PZN-8PZT, 4PZN-6PZT) had irregular shape and submicron sizes. The as-deposited film had fairly dense microstructure without any crack, and showed only a perovskite single phase formed with nano-sized grains. The as-deposited films on silicon were annealed at the temperatures of $700^{\circ}C$, and the films deposited on sapphire were annealed at $900^{\circ}C$ in the electrical furnace. The effects of PZN addition on the microstructural evolution were observed using by FE-SEM and HR-TEM.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.186-186
• /
• 2015

We have introduced multifunctional ITO single thin films formed by normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions. MFSS ITO also possesses high gas diffusion barrier properties simultaneously low resistivity even it deposited at room temperature without post annealing on plastic substrate. Nano-crystalline enhancement by Ar energy has energy window from 20 to 30 eV under blocking NOI condition. Effect of blocking NOI and optimal Ar energy window enhancement facilitate that resistivity is minimized to $3.61{\times}10^{-4}{\Omega}cm$ and the WVTR of 100 nm thick MFSS ITO is $3.9{\times}10^{-3}g/(m^2day)$ which is measured under environmental conditions of 90% relative humidity and 50oC that corresponds to a value of ${\sim}10^{-5}g/(m^2day)$ at room temperature. The multifunctional MFSS ITO with low resistivity, and low gas permeability will be highly valuable for plastic electronics applications.

• Electrical & Electronic Materials
• /
• v.9 no.1
• /
• pp.59-66
• /
• 1996

Polyimides containing cyclobutane ring in main chain is known to be thermally stable and able to be developed in organic solvents after photolysis with 254 nm UV light. This type of polyimides can be used as promising positive photoresist in VLSI fabrication process. In the current VLSI process, photoresist films are formed by spin coating. The film thickness is more than several hundred nano meters. It seems that there is room for improvement of film coating process by introducing Langmuir Blodgett technique. Thereby ultra thin film photoresist can be formed, and higher density of integration in VLSI be achieved. In the present work, depositing procedure of LB films of this polyimide was investigated. LB film thickness was measured by ellipsometry to evaluate deposited film status. Chemical imidization procedure was studied to avoid several problems in thermal imidization. The pattern of submicron dimension has successfully formed on LB film of 8nm thick, which found showing good contrast.

• Journal of Sensor Science and Technology
• /
• v.20 no.6
• /
• pp.406-411
• /
• 2011

$Co_3O_4$ thick film gas sensor using the powder prepared by hydrothermal reaction method(HRM) was fabricated. For comparison study, we also prepared the sensor using commercial $Co_3O_4$ powder under the same fabrication conditions. Sensitivity, time response, and selectivity of them to variable gases such as iso-$C_4H_{10}$, CO, $NH_3$, and $CH_4$ were investigated. The sensor from the powder prepared by HRM showed higher sensitivity to every gas than those from commercial powder. For iso-$C_4H_{10}$ gas, the sensitivities of both sensor to 100 ppm are 160 % and 40 %, respectively. Time response and selectivity of the sensor using the powder prepared by HRM were better than those of the sensor using commercial powder.

• Journal of the Korean Society for Heat Treatment
• /
• v.29 no.6
• /
• pp.272-276
• /
• 2016

Al doped ZnO (AZO) single layer and AZO/Ag bi-layered films were deposited on the glass substrates by radio frequency and direct current magnetron sputtering and then the effect of Ag buffer layer on the electrical and optical properties of the films was investigated. The thicknesses of AZO upper layer was kept as 100 nm, while Ag buffer layer was varied from 5 to 15 nm. The observed results mean that opto-electrical properties of the AZO films is influenced with Ag buffer layer and AZO film with 10 nm thick Ag buffer layer show the higher opto-electrical performance than that of the AZO single layer film prepared in this study.

• Korean Journal of Metals and Materials
• /
• v.48 no.12
• /
• pp.1109-1115
• /
• 2010

ZnO thin films were deposited on Si(100) substrates at low temperatures ($44^{\circ}C{\sim}210^{\circ}C$) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UV-absorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at $44^{\circ}C$ while stable crystallized ZnO films were deposited above $90^{\circ}C$. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than $90^{\circ}C$.

• Journal of the Korean Magnetics Society
• /
• v.18 no.1
• /
• pp.32-35
• /
• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Transactions of the Korean hydrogen and new energy society
• /
• v.21 no.5
• /
• pp.375-382
• /
• 2010

A layered perovskite photocatalysts, $SrBi_2Nb_2O_9$ (SBN), was synthesized by the conventional solid-state reaction method and characterized by X-ray diffraction (XRD) and UV-visble spectrophotometry. The results showed that the structure of $SrBi_2Nb_2O_9$ is orthorhombic. Diffuse reflectance spectra for calcined and attrition-milled SBN showed the main absorption edges were less 400 nm, that is ultraviolet region. SBN under micron-sized powder was deposited on the $Al_2O_3$ by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $SrBi_2Nb_2O_9$ photocatalytic thick film was fabricated. AD-deposited SBN thick films were characterized by XRD, scanning electron microscopy (SEM) and UV-visable spectrophotometry, Moreover, it was found that several nano-sized SBN film by AD process can improve the photocatalytic activity under visable reflectance.