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http://dx.doi.org/10.3365/KJMM.2010.48.12.1109

Crystallized Nano-thick ZnO Films with Low Temperature ALD Process  

Yu, Byungkwan (Department of Materials Science and Engineering, University of Seoul)
Han, Jeungjo (Department of Materials Science and Engineering, University of Seoul)
Song, Ohsung (Department of Materials Science and Engineering, University of Seoul)
Publication Information
Korean Journal of Metals and Materials / v.48, no.12, 2010 , pp. 1109-1115 More about this Journal
Abstract
ZnO thin films were deposited on Si(100) substrates at low temperatures ($44^{\circ}C{\sim}210^{\circ}C$) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UV-absorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at $44^{\circ}C$ while stable crystallized ZnO films were deposited above $90^{\circ}C$. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than $90^{\circ}C$.
Keywords
ALD; thin films; crystallinity; deposition; X-ray diffraction;
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