한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Passivation of organic light emitting diodes with a-$SiN_x$ thin films grown by catalyzer enhanced chemical vapor deposition

  • Jeong, Jin-A (Department of Information and Nano-Materials Engineering, Kumoh National Institute of Technology) ;
  • Kang, Jae-Wook (Organic Light Emitting Diodes Center, Seoul National University) ;
  • Kim, Han-Ki (Department of Information and Nano-Materials Engineering, Kumoh National Institute of Technology)
  • Published : 2007.08.27
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Abstract

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

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