Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Two-step Electroless Plated Pt Ohmic Contacts to p-type InGaAs

  • Im, Hung-Su (School of Nano Advanced Materials Engineering, Changwon National University) ;
  • Wang, Kai (School of Nano Advanced Materials Engineering, Changwon National University) ;
  • Kim, Geun-Woo (School of Nano Advanced Materials Engineering, Changwon National University) ;
  • Chang, Ji-Ho (Major of Semiconductor Physics, Korea Maritime University) ;
  • Koo, Bon-Heun (School of Nano Advanced Materials Engineering, Changwon National University)
  • Received : 2010.01.12
  • Accepted : 2010.04.29
  • Published : 2010.04.30
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Abstract

This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.

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References

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