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http://dx.doi.org/10.5695/JKISE.2010.43.2.047

Two-step Electroless Plated Pt Ohmic Contacts to p-type InGaAs  

Im, Hung-Su (School of Nano Advanced Materials Engineering, Changwon National University)
Wang, Kai (School of Nano Advanced Materials Engineering, Changwon National University)
Kim, Geun-Woo (School of Nano Advanced Materials Engineering, Changwon National University)
Chang, Ji-Ho (Major of Semiconductor Physics, Korea Maritime University)
Koo, Bon-Heun (School of Nano Advanced Materials Engineering, Changwon National University)
Publication Information
Journal of the Korean institute of surface engineering / v.43, no.2, 2010 , pp. 47-50 More about this Journal
Abstract
This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.
Keywords
Pt film; p-type InGaAs; CTLM; Ohmic contact; Two-step electroless plating;
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