• Title/Summary/Keyword: nano-thick

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Characteristics and Thermal Stabilities of W-B-C-N Diffusion Barrier by Using the Incorporation of Boron Impurities (Boron 불순물에 의한 W-B-C-N 확산방지막의 특성 및 열적 안정성 연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Magnetics Society
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    • v.18 no.1
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    • pp.32-35
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    • 2008
  • Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

Effect of Post-Annealing Conditions on Interfacial Adhesion Energy of Cu-Cu Bonding for 3-D IC Integration (3차원 소자 집적을 위한 Cu-Cu 접합의 계면접착에너지에 미치는 후속 열처리의 영향)

  • Jang, Eun-Jung;Pfeiffer, Sarah;Kim, Bi-Oh;Mtthias, Thorsten;Hyun, Seung-Min;Lee, Hak-Joo;Park, Young-Bae
    • Korean Journal of Materials Research
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    • v.18 no.4
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    • pp.204-210
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    • 2008
  • $1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

Effect of ALD-Al2O3 Passivation Layer on the Corrosion Properties of CrAlSiN Coatings (ALD-Al2O3 보호층이 적용된 CrAlSiN 코팅막의 내부식성 특성에 관한 연구)

  • Wan, Zhixin;Lee, Woo-Jae;Jang, Kyung Su;Choi, Hyun-Jin;Kwon, Se Hun
    • Journal of the Korean institute of surface engineering
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    • v.50 no.5
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    • pp.339-344
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    • 2017
  • Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

Ion Transmittance of Anodic Alumina for Ion Beam Nano-patterning (이온빔 나노 패터닝을 위한 양극산화 알루미나의 이온빔 투과)

  • Shin S. W.;Lee J-H;Lee S. G.;Lee J.;Whang C. N.;Choi I-H;Lee K. H.;Jeung W. Y.;Moon H.-C.;Kim T. G.;Song J. H.
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.97-102
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    • 2006
  • Anodic alumina with self-organized and ordered nano hole arrays can be a good candidate of an irradiation mask to modify the properties of nano-scale region. In order to try using porous anodic alumina as a mask for ion-beam patterning, ion beam transmittance of anodic alumina was tested. 4 Um thick self-standing AAO templates anodized from Al bulk foil with two different aspect ratio, 200:1 and 100:1, were aligned about incident ion beam with finely controllable goniometer. At the best alignment, the transmittance of the AAO with aspect ratio of 200:1 and 100:1 were $10^{-8}\;and\;10^{-4}$, respectively. However transmittance of the thin film AAO with low aspect ratio, 5:1, were remarkably improved to 0.67. The ion beam transmittance of self-standing porous alumina with a thickness larger than $4{\mu}m$ is extremely low owing to high aspect ratio of nano hole and charging effect, even at a precise beam alignment to the direction of nano hole. $SiO_2$ nano dot array was formed by ion irradiation into thin film AAO on $SiO_2$ film. This was confirmed by scanning electron microscopy that the $SiO_2$ nano dot array is similar to AAO hole array.

The Study of Nano-vesicle Coated Powder (나노베시클 표면처리 분체의 개발연구)

  • Son, Hong-Ha;Kwak, Taek-Jong;Kim, Kyung-Seob;Lee, Sang-Min;Lee, Cheon-Koo
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.32 no.1 s.55
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    • pp.45-51
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    • 2006
  • In the field of makeup cosmetics, especially, powder-based foundations such as two-way cake, pact and face powder, the quality of which is known to be strongly influenced by the properties of powder, surface treatment technology is widely used as a method to improve the various characteristics of powder texture, wear properties, dispersion ability and so on. The two-way cake or pressed-powder foundation is one of the familiar makeup products in Asian market for deep covering and finishing purpose. In spite of the relent progress in surface modification method such as composition of powders with different characteristics and application of a diversity of coating ingredient (metal soap, amino acid, silicone and fluorine), this product possess a technical difficulty to enhance both of the adhesion power and spreadability on the skin in addition to potential claim of consumer about heavy or thick feeling. This article is covering the preparation and coating method of nano-vesicle that mimic the double-layered lipid lamellar structure existing between the corneocytes of the stratum corneum in the skin for the purpose of improving both of two important physical characteristic of two-way cake, spreadability and adhering force to skin, and obtining better affinity to skin. Nano-vesicle was prepared using the high-pressure emulsifying process of lecithin, pseudo ceramide, butylene glycol and tocopheryl acetate. This nano-sized emulsion was added to powder-dispersed aqueous phase together with bivalent metal salt solution and then the filtering and drying procedure was followed to yield the nano-vesicle coated powder. The amount of nano-vesicle coated on the powder was able to regulated by the concentration of metal salt and this novel powder showed the lower friction coefficient, more uniform condition of application and higher adhesive powder comparing with the alkyl silane treated powder from the test result of spreadability and wear properties using friction meter and air jet method. Two-wav cake containing newly developed coated powder with nano-vesicle showed the similar advantages in the frictional and adhesive characteristics.

The development of ultra high-speed metal film deposition system and process technology for a heat sink in digital devices (디지털 소자용 방열판 제작을 위한 초고속 금속필름 증착장치 및 공정기술 개발)

  • Yoon, Hyo Eun;Ahn, Seong Joon;Han, Dong Hwan;Ahn, Seungjoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.7
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    • pp.17-25
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    • 2017
  • To resolve the problem of the temperature rise in LED or OLED lighting, until now a thick metal film has been used as a heat-sink. Conventionally, this thick metal film is made by the electroplating method and used as the heat-dissipating plate of the electronic devices. However, nowadays there is increasing need for a Cu metal film with a thickness of several hundred micrometers that can be formed by the dry deposition method. In this work, we designed and fabricated a Cu film deposition system where the heating element is separated from the ceramic crucible, which makes ultra-rapid deposition possible by preventing heat loss. In addition, the resulting induction heating also contributes to the high deposition rate. By tuning the various parameters, we obtained a $100-{\mu}m$ thick Cu film whose heat conductivity is high and whose thickness uniformity is better than 2%, while the deposition rate is as high as $1000{\AA}/s$.

Flexibility Study of Silicon Thin Film Transferred on Flexible Substrate (폴리머 기판 위에 전사된 실리콘 박막의 기계적 유연성 연구)

  • Lee, Mi-Kyoung;Lee, Eun-Kyung;Yang, Min;Chon, Min-Woo;Lee, Hyouk;Lim, Jae Sung;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.3
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    • pp.23-29
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    • 2013
  • Development of flexible electronic devices has primarily focused on printing technology using organic materials. However, organic-based flexible electronics have several disadvantages, including low electrical performance and long-term reliability. Therefore, we fabricated nano- and micro-thick silicon film attached to the polymer substrate using transfer printing technology to investigate the feasibility of silicon-based flexible electronic devices with high performance and high flexibility. Flexibility of the fabricated samples was investigated using bending and stretching tests. The failure bending radius of the 200 nm-thick silicon film attached on a PI substrate was 4.5 mm, and the failure stretching strain was 1.8%. The failure bending radius of the micro-thick silicon film attached on a FPCB was 2 mm, and the failure strain was 3.5%, which showed superior flexibility compared with conventional silicon material. Improved flexibility was attributed to a buffering effect of the adhesive between the silicon film and the substrate. The superior flexibility of the thin silicon film demonstrates the possibility for flexible electronic devices with high performance.

Contact Formation Between Ag and Si With Lead-Free Frits in Ag Pastes For Si Solar Cells (실리콘 태양전지용 Ag pastes 에서의 무연 프릿에 따른 Ag, Si간 접촉 형성)

  • Kim, Dongsun;Hwang, Seongjin;Kim, Jongwoo;Lee, Jungki;Kim, Hyungsun
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.61.2-61.2
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    • 2010
  • Ag thick-film has usually been used for the front electrode of Si solar cells with the outstanding electrical properties. Ag paste consists of Ag powers, vehicles, frits and additives. Ag paste has broadly been screen-printed on the front side of Si wafer with the merits of low cost and simplicity. The optimal contact formation between Ag electrodes and Si wafer in the front electrode during a fast firing has been considered as the key factor for high efficiency. Although the content of frit in Ag pastes is less than 5wt%, it can profoundly influence the contact formation between Ag and Si under the fast firing. In this study, the effects of lead-free frits on the contacts between Ag and Si were studied with the thermal properties and compositions of various frits. Our experimental results showed that the electrical properties of cells were related to the interface structures between Ag and Si. It was found that current path of electrons from Si to Ag would be possible through the tunneling mechanism assisted by tens of nano-Ag recrystals on $n^+$ emitter as well as Ag recrystals penetrated into $n^+$ emitter layers. These preliminary studies will be helpful for designing the proper frits for the Ag pastes with considering the properties of various Si wafers.

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Multifunctional Indium Tin Oxide Thin Films

  • Jang, Jin-Nyeong;Jang, Yun-Seong;Yun, Jang-Won;Lee, Seung-Jun;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.162-162
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    • 2016
  • We present multifunctional indium tin oxide (ITO) thin films formed at room temperature by a normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions (NOIs). The ITO thin film possesses not only low resistivity but also high gas diffusion barrier properties even though it is deposited on a plastic substrate at room temperature without post annealing. Argon neutrals incident to substrates in the sputtering have an optimal energy window from 20 to 30 eV under the condition of blocking energetic NOIs to form ITO nano-crystalline structure. The effect of blocking energetic NOIs and argon neutrals with optimal energy make the resistivity decrease to $3.61{\times}10-4{\Omega}cm$ and the water vapor transmission rate (WVTR) of 100 nm thick ITO film drop to $3.9{\times}10-3g/(m2day)$ under environmental conditions of 90% relative humidity and 50oC, which corresponds to a value of ~ 10-5 g/(m2day) at room temperature and air conditions. The multifunctional ITO thin films with low resistivity and low gas permeability will be highly valuable for plastic electronics applications.

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Change of Mechanical Properties of Clad Steel According to the Welding Process Design (용접 공정 디자인에 따른 클래드강의 기계적 성질 변화)

  • Lee, Jung-Hyun;Park, Jaw-Won
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.3
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    • pp.372-379
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    • 2013
  • In this study, we investigated the traits of the clad metals used in hot-rolled clad steel plates. We examined the sensitization and mechanical properties of STS 316 steel plate and carbon steel (A516) under the specific circumstances of post heat treatment and whether a weld was multilayered and thick or repeated because of repairs. The test conditions were as follows. The clad steel plates were butt-welded using FCAW/SAW, and the heat treatment was conducted at $625^{\circ}C$, for 80, 160, 320, 640, or 1280 min. The change in the corrosion resistance was evaluated in these specimens. In the case of the carbon steel (A516), as the heat treatment time increased, the annealing effect caused the tensile strength to decrease. The micro- hardness gradually increased and then decreased after 640 min. The elongation and contraction of the area increased gradually. An oxalic acid etch test and EPR test on STS316, a clad metal, showed a STEP structure and no sensitization. From the test results for the multi-layered and repair welds, it could be concluded that there is no effect on the corrosion resistance of clad metals. In summary, the purpose of this study was to suggest some considerations when developing on-site techniques and evaluate the sensitization of stainless steels.