Browse > Article
http://dx.doi.org/10.3740/MRSK.2008.18.4.204

Effect of Post-Annealing Conditions on Interfacial Adhesion Energy of Cu-Cu Bonding for 3-D IC Integration  

Jang, Eun-Jung (School of Materials Science and Engineering, Andong National University)
Pfeiffer, Sarah (EV Group)
Kim, Bi-Oh (EV Group)
Mtthias, Thorsten (EV Group)
Hyun, Seung-Min (Division of Nano-Mechanical Systems Research, Korea Institute of Machinery & Materials)
Lee, Hak-Joo (Division of Nano-Mechanical Systems Research, Korea Institute of Machinery & Materials)
Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
Publication Information
Korean Journal of Materials Research / v.18, no.4, 2008 , pp. 204-210 More about this Journal
Abstract
$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.
Keywords
Adhesion; 3-D Integration; 4-point bending test; Cu-Cu bonding; post annealing;
Citations & Related Records

Times Cited By SCOPUS : 2
연도 인용수 순위
1 P. G. Charalambides, J. Lund, A. G. Evans and R. M. McMeeking, J. Appl. Mech., 111, 77 (1989)
2 R. Tadepalli and C. V. Thompson, Appl. Phys. Lett., 90, 151919 (2007)   DOI   ScienceOn
3 N. Tomesakai , M. Suzuki and J. Komeno, J. Electrochem. Soc., 140, 2432 (1993)   DOI
4 K. Hirodawa, Y. Yokokawa and M. Oku, S. I. A., 3(2), 81 (1981)
5 K. N. Chen, A. Fan, C. S. Tan and R. Reif, J. E. M., 32(12), 1371 (2003)
6 R. Shaviv, S. Toham and P. Woytowitz, Microelectromic. Eng., 82, 99 (2005)   DOI   ScienceOn
7 S.M. Yi, J. U. An, S. S. Hwang, J. R. Yim, Y. H. Huh, Y. B. Park and Y. C. Joo, Thin Solid Films., 516, 2325 (2008)   DOI   ScienceOn
8 W. Ruythooren, A. Beltran and R. Labie, in proceedings of the Electronics Packaging Technology Conference (Singapore, December 2007) p.51
9 R. Tadepalli, Ph. D. Thesis, p. 13-17, Massachuesetts Institute of Technology, USA (2006)
10 K. N. Chen, C. S. Tan, A. Fan and R. Reif, Appl. Phys. Lett., 86, 011903 (2005)   DOI   ScienceOn
11 A. Fan, A. Rahman and R.Reif, Electrochemical and Solid-Sate Letters., 2(10), 534 (1999)   DOI
12 K. N. Chen, S. M. Chang, L. C. Shen and R. Reif, J. E. M., 35(5), 1082 (2006)
13 C. S. Tan, R. Reif, N. D. Theodore and S. Pozder, Appl, Phys. Lett., 87, 201909 (2005)   DOI   ScienceOn
14 H. Zhenyu, Z. Suo, X. Guanghai, H. Jun, J. H. Prevost and N. Sukumar. Eng. Fracture Mech., 72, 2584 (2005)   DOI   ScienceOn
15 J. M. Koo, B. Q. Vu, Y. N. Kim, J. B. Lee, J. W. Kim, D. U. Kim, J. H. Moon and S. B. Jung, JEM., 37(1), 118 (2007)   DOI
16 K. N. Chen, A. Fan, C.S. Tan and R. Reif, J. E. M., 35(2), 230 (2006)