• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.676-680
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• 2010

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.760-765
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• 2014

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.171-177
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• 2012

The computer program (EPR-NMR program version 6.2) employed here sets up the spin Hamiltonian matrices and determines their eigenvalues using exact diagonalization. We study the electron spin resonance for $Mn^{2+}$ in ferroelectric $LiNbO_3$ single crystals. The self-energy is obtained using the projection operator method developed by Argyres and Sigel. The self-energy is calculated to be axially symmetric about the by the spin Hamiltonian. The line-widths decreased as the temperature increased; we assume that the hyperfine structure transition is a more dominant scattering than the other transitions. We conclude that the calculation process presented in this study is useful for quantum optical transitions.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.5
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• pp.237-242
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• 2007

Friction coefficient of SM45C steel was surprisingly reduced with $H_2S$ and $C_3H_8$ gas during plasma sulf-nitriding. During the plasma sulf-nitriding, 100-700 sccm of $H_2S$ gas and 100 sccm of $C_3H_8$ gas were added and working pressure and temperature were 2 torr, $500-550^{\circ}C$, respectively. As $H_2S$ gas amount increased over 500 sccm, flake-like structures were developed on top of the nitriding layer and grain size of the nitriding layer were about 100 nm. The friction coefficient for the sample treated plasma sulf-nitriding under $N_2-H_2S$ gas was 0.4 - 0.5. The structure became more finer and amorphous-like along with $N_2-H_2S-C_3H_8$ gas and the nano-sized surface microstructures resulted in high hardness and significantly low friction coefficient of 0.2.

• Journal of Advanced Navigation Technology
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• v.20 no.1
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• pp.65-71
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• 2016

Quantum-dot cellular automata (QCA) consists of nano-scale cells and demands very low power consumption so that it is one of the alternative technologies that can overcome the limits of scaling CMOS technologies. Typical BCD-EXCESS 3 code converters using QCA have not considered the scalability so that the architectures are not suitable for a large scale circuit design. Thus, we design a BCD-EXCESS 3 code converter with scalability using QCADesigner and verify the effectiveness by simulation. Our structure have reduced 32 gates and 7% of garbage space rate compare with typical URG BCD-EXCESS 3 code converter. Also, 1 clock is only needed for circuit expansion of our structure though typical QCA BCD-EXCESS 3 code converter demands 7 clocks.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.5-12
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• 2005

The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.190-194
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• 2008

Epitaxial $L1_0$ FePd (001) thin films were successfully manufactured by sputtering deposition method. The structure and magnetic properties of FePd thin films were characterized as a function of Fe compositions. It was found that the long-range ordering parameter had a maximum for the stoichiometric composition, whereas the magnetic anisotropy had a maximum as the Fe content is decreased to slightly above the stoichiometric composition. This indicates that the stoichiometry is directly contributed to the chemical ordering and the magnetic anisotropy. These results imply that nonstoichiometric FePd compositions, with a slight excess of Pd, may in fact be preferred for applications that require high magnetic anisotropy.

• The Journal of the Korean dental association
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• v.48 no.2
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• pp.106-112
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• 2010

Tissue engineering has been enhanced by advance in biomaterial nature, surface structure and design. In this paper, I report specifically vertically aligned titania ($TiO_2$) nanotube surface structuring for optimization of titanium implants utilizing nanotechnology. The formation, mechanism, characteristics of titania nanotubes are explained and emerging critical role in tissue engineering and regenerative medicine is reviewed. The main focus of this paper is on the unique 3 dimensional tubular shaped nanostructure of titania and its effects on creating epochal impacts on cell behavior. Particularly, I discuss how different cells cultured on titania nanotube are adhered, proliferated, differentiated and showed phenotypic functionality compared to those cultured on flat titanium. As a matter of fact, the presence of titania nanotube surface structuring on titanium for dental applications had an important effect improving the proliferation and mineralization of osteoblasts in vitro, and enhancing the bone bonding strength with rabbit tibia over conventional titanium implants in vivo. The nano-features of titania nanotubular structure are expected to be advantageous in regulating many positive cell and tissue responses for various tissue engineering and regenerative medicine applications.

• Composites Research
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• v.32 no.6
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• pp.388-394
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• 2019

Inherited the excellent electrical and mechanical properties based on the low dimensional structure of graphene, three-dimensional graphene nanostructures have gathered great attention as electrochemical energy storage electrodes owing to their high porosity and large specific surface area. Also, having the catecholamine structure, dopamine has been regarded as a multifunctional material to possess high affinity to various organic/inorganic materials and to modify a hydrophobic surface to a hydrophilic one. In this work, through coating dopamine on the three-dimensional graphene nanostructure, we tried to increase the specific capacitance by enhancing the wettability with electrolyte and to improve the mechanical compressive property by strengthening the nano-architecture. As a result, the dopamine-coated nanostructure exhibited significant improvement on the specific capacitance (51.5% increase) and compressive stress (59.6% increase).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.245-250
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• 2019

We investigated the post-annealing effect of Sn-incorporated β-Ga₂O₃ (β-Ga₂O₃ : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga₂O₃ : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga₂O_3-x, is transformed into stoichiometric Ga₂O₃, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga₂O₃ : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga₂O₃ : Sn NWs.