• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.419-420
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• 2009

The authors fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell and the surface of crystalline Si wafer using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~80nm and an ave rage lattice constant of 100nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM) and the enhancement of solar cell efficiency will be presented.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.12 s.177
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• pp.16-21
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• 2005

Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for the manipulation of light. The existence of a photonic bandgap, a frequency range in which the propagation of light is prevented in all directions, makes photonic crystal very useful in application where the spatial localization of light is required, for example waveguide, beam splitter, and cavity. However, the fabrication of 3 dimensional photonic crystals is still difficult process. A concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air and perforated with two dimensional lattice of hole. The fabrication of Si master with pillar structure using hot embossing process is investigated for two dimensional, low-index-contrast photonic crystal waveguide. From our research we show that the multiple stamp copy process proved to be feasible and useful.

• Smart Structures and Systems
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• v.25 no.4
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• pp.501-514
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• 2020

This article presents a comprehensive model to investigate a free vibration and resonance frequencies of nanostructure perforated beam element as nano-resonator. Nano-scale size dependency of regular square perforated beam is considered by using nonlocal differential form of Eringen constitutive equation. Equivalent mass, inertia, bending and shear rigidities of perforated beam structure are developed. Kinematic displacement assumptions of both Timoshenko and Euler-Bernoulli are assumed to consider thick and thin beams, respectively. So, this model considers the effect of shear on natural frequencies of perforated nanobeams. Equations of motion for local and nonlocal elastic beam are derived. After that, analytical solutions of frequency equations are deduced as function of nonlocal and perforation parameters. The proposed model is validated and verified with previous works. Parametric studies are performed to illustrate the influence of a long-range atomic interaction, hole perforation size, number of rows of holes and boundary conditions on fundamental frequencies of perforated nanobeams. The proposed model is supportive in designing and production of nanobeam resonator used in nanoelectromechanical systems NEMS.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Journal of Magnetics
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• v.18 no.2
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• pp.81-85
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• 2013

We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy ($V_N$) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of $V_N$ defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and $V_N$ states, the spin-polarization on the Cu atoms in the InN lattice is reduced by $V_N$ defect. So, it shows a weak ferromagnetic behavior.

• Journal of the Korean Chemical Society
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• v.53 no.5
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• pp.560-564
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• 2009

ZnO and Mn-substituted $Zn_{0.95}Mn_{0.05}O$ were synthesized by using precipitation method. $Zn_{0.95}Mn_{0.05}O$ compound absorbed UV light as well as hole range of visible light ($400{\sim}800$ nm). Results obtained revealed that $Zn_{0.95}Mn_{0.05}O$ showed higher activity than P-25 for visible-photocatalytic degradation of 1,4- dichlorobenzene.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.175-175
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• 2003

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.487-489
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• 2004

마이크로 사이즈 공음극 플라즈마 전극에 대한 제작 및 방전 실험을 진행하였다. 방전 전극은 200~500 um의 hole 형상을 제작하였으며 70~850 torr He 분위기에서 방전 실험하였다. 실험 샘플은 막힌 공음극 형상과, 관통된 공음극 두가지 형상을 실험하였다. 마이크로 공음극 플라즈마의 공음극 크기에 따른 결과에서 사이즈가 작을수록 총 전류 값은 낮아지나, 전류 밀도는 증가하였다. 막힌 공음극에서는 양저항 특성을, 관통된 공음극에서는 부저항 결과를 얻었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.348-348
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• 2016

Low dark current (off-current) and high photo current are both essential for a solution processed organic photodetector (OPD) to achieve high photo-responsivity. Currently, most OPDs utilize a bulk heterojunction (BHJ) photo-active layer that is prepared by the one-step deposition of a polymer:fullerene blend solution. However, the BHJ structure is the main cause of the high dark current in solution processed OPDs. It is revealed that the detectivity and spectral responsivity of the OPD can be improved by utilizing a photo-active layer consisting of an interdiffused polymer/fullerene bilayer (ID-BL). This ID-BL is prepared by the sequential solution deposition (SqD) of poly(3-hexylthiophene) (P3HT) and [6,6] phenyl C61 butyric acid methyl ester (PCBM) solutions. The ID-BL OPD is found to prevent undesirable electron injection from the hole collecting electrode to the ID-BL photo-active layer resulting in a reduced dark current in the ID-BL OPD. Based on dark current and external quantum efficiency (EQE) analysis, the detectivity of the ID-BL OPD is determined to be $7.60{\times}1011$ Jones at 620 nm. This value is 3.4 times higher than that of BHJ OPDs. Furthermore, compared to BHJ OPDs, the ID-BL OPD exhibited a more consistent spectral response in the range of 400 - 660 nm.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1881-1884
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• 2003

In this experiment, the oxidations of p-Xylene (140-180 ppmv), one of the air pollutants as a VOC, using $UV/TiO_2$ photocatalyst is studied. In order to increase the specific surface area, the filter is coated by nano $TiO_2$ particles. The photodegradation system consists of a VOCs generator, a photocatalyst filter and a measuring equipment. Illumination is generally provided by two of 20 W black light lamps with 380 nm of wavelength. The filter coated by nano $TiO_2$ particles has a passing efficiency over 80% but a pressure drop of 9.0 $mmH_2O$ at 0.45 cm/s. The filter endurance is better than activated carbon at the same pressure drop.