• 제목/요약/키워드: nano electron device

검색결과 115건 처리시간 0.025초

Bonded SOI wafer의 top Si과 buried oxide layer의 결함에 대한 연구 (Characteristic Study for Defect of Top Si and Buried Oxide Layer on the Bonded SOI Wafer)

  • 김석구;백운규;박재근
    • 한국재료학회지
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    • 제14권6호
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    • pp.413-419
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    • 2004
  • Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process

  • Woo, Jong-Chang;Choi, Chang-Auck;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제15권1호
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    • pp.49-54
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    • 2014
  • In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

PECVD를 이용한 DLC 두께 제어에 따른 간섭색 구현 (Tuning the Interference Color with PECVD Prepared DLC Thickness)

  • 박새봄;김광배;김호준;김치환;최현우;송오성
    • 한국재료학회지
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    • 제31권7호
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    • pp.403-408
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    • 2021
  • Various surface colors are predicted and implemented using the interference color generated by controlling the thickness of nano-level diamond like carbon (DLC) thin film. Samples having thicknesses of up to 385 nm and various interference colors are prepared using a single crystal silicon (100) substrate with changing processing times at low temperature by plasma-enhanced chemical vapor deposition. The thickness, surface roughness, color, phases, and anti-scratch performance under each condition are analyzed using a scanning electron microscope, colorimeter, micro-Raman device, and scratch tester. Coating with the same uniformity as the surface roughness of the substrate is possible over the entire experimental thickness range, and more than five different colors are implemented at this time. The color matched with the color predicted by the model, assuming only the reflection mode of the thin film. All the DLC thin films show constant D/G peak fraction without significant change, and have anti-scratch values of about 19 N. The results indicate the possibility that nano-level DLC thin films with various interference colors can be applied to exterior materials of actual mobile devices.

Enhanced Electrical Conductivity of Gold Doped Graphene Films by Microwave Treatment

  • Kim, Yoo-Seok;Song, Woo-Seok;Cha, Myoung-Jun;Lee, Su-Il;Cho, Ju-Mi;Kim, Sung-Hwan;Park, Chong-Yun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.188-188
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    • 2012
  • Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. In this study, we report a creative strategy, irradiation of microwave at room temperature under vacuum, for obtaining size-homogeneous gold nano-particle doping on graphene. The gold nano-particlization promoted by microwave irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping. These results clearly revealed that gold nanoparticle with ${\geq}30$ nm in mean size were decorated along the surface of the graphene after microwave irradiation. The fabrication high-performance transparent conducting film with optimized doping condition showed a sheet resistance of ${\geq}100{\Omega}$/sq. at ~90% transmittance. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

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양자점 층의 미세구조 형상이 양자점 LED 전계 발광 특성에 미치는 효과 (Effect of Microstructure of Quantum Dot Layer on Electroluminescent Properties of Quantum Dot Light Emitting Devices)

  • 윤성룡;전민현;이전국
    • 한국재료학회지
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    • 제23권8호
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    • pp.430-434
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    • 2013
  • Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

Ni 박막 위 20 nm급 고정렬 Pt 크로스-바 구조물의 형성 방법 (Pattern Formation of Highly Ordered Sub-20 nm Pt Cross-Bar on Ni Thin Film)

  • 박태완;정현성;조영래;이정우;박운익
    • 대한금속재료학회지
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    • 제56권12호
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    • pp.910-914
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    • 2018
  • Since catalyst technology is one of the promising technologies to improve the working performance of next generation energy and electronic devices, many efforts have been made to develop various catalysts with high efficiency at a low cost. However, there are remaining challenges to be resolved in order to use the suggested catalytic materials, such as platinum (Pt), gold (Au), and palladium (Pd), due to their poor cost-effectiveness for device applications. In this study, to overcome these challenges, we suggest a useful method to increase the surface area of a noble metal catalyst material, resulting in a reduction of the total amount of catalyst usage. By employing block copolymer (BCP) self-assembly and nano-transfer printing (n-TP) processes, we successfully fabricated sub-20 nm Pt line and cross-bar patterns. Furthermore, we obtained a highly ordered Pt cross-bar pattern on a Ni thin film and a Pt-embedded Ni thin film, which can be used as hetero hybrid alloy catalyst structure. For a detailed analysis of the hybrid catalytic material, we used scanning electron microscope (SEM), transmission electron microscope (TEM) and energy-dispersive X-ray spectroscopy (EDS), which revealed a well-defined nanoporous Pt nanostructure on the Ni thin film. Based on these results, we expect that the successful hybridization of various catalytic nanostructures can be extended to other material systems and devices in the near future.

Tribological Properties of Sputtered Boron Carbide Coating and the Effect of ${CH}_4$ Reactive Component of Processing Gas

  • Cuong, Pham-Duc;Ahn, Hyo-Sok;Kim, Jong-Hee;Shin, Kyung-Ho
    • KSTLE International Journal
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    • 제4권2호
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    • pp.56-59
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    • 2003
  • Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a ${B}_4$C target with Ar as processing gas. Various amounts of methane gas (${CH}_4$) were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that ${CH}_4$addition to Ar processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of ${CH}_4$gas component from 0 to 1.2 vol %. By adding a sufficient amount of ${CH}_4$(1.2 %) in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

$TiO_2$ 나노 입자의 중간 전극을 이용한 직렬 적층형 유기 태양 전지 (Solution-processed Polymer Tandem Cells Using Nano Crystalline $TiO_2$ Interlayer)

  • 정원석;주병권;고민재;박남규;김경곤
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.444-444
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    • 2008
  • For the polymer tandem cell, simple and advantaged solution-based method to electron transport intermediate layer is presented which are composed $TiO_2$ nanoparticles. Device were based on a regioregular Poly(3-hexylthiophene)(P3HT) and [6,6]-phenyl $C_{61}$ butyric acid methyl ester($PC_{60}BM$) blend as a donor and acceptor bulk-heterojunction. For the middle electrode interlayer, the $TiO_2$ nanoparticles were well dispersed in ethanol solution and formed thin layer on the P3HT:PCBM charge separation layer by spin coating. The layer serves as the electron transport layer and divides the polymer tandem solar cell. The open-circuit voltage (Voc) for the polymer tandem solar cells was closed to the sum of those of individual cells.

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Tribological properties of sputtered boron carbide coating and the effect of $CH_4$ reactive component of processing gas

  • Cuong Pham Duc;Ahn Hyo-Sok;Kim Jong-Hee;Shin Kyung-Ho
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2003년도 학술대회지
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    • pp.78-84
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    • 2003
  • Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a $B_4C$ target with As as processing gas. Various amounts of methane gas $(CH_4)$ were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that $CH_4$ addition to As processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of $CH_4$, gas component from 0 to $1.2\;vol\;\%$. By adding a sufficient amount of $CH_4\;(1.2\%)$ in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

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Synthesis of Composite Particles with Fe3O4 core and Ag Shell for the Development of Fingerprints

  • Zhang, Ling-Yan;Chu, Ting
    • Bulletin of the Korean Chemical Society
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    • 제34권5호
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    • pp.1457-1461
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    • 2013
  • The $Fe_3O_4$-core and Ag-shell ($Fe_3O_4@Ag$ nanoeggs) were prepared through the encapsulation of 3-aminopropyltriethoxysilane-coated magnetite nanoparticle in nano-Ag shell by a simple chemically controlled procedure. The $Fe_3O_4@Ag$ nanoeggs were characterized by scanning electron microscopy, transmission electron microscopy, UV-vis spectrum and superconducting quantum interference device magnetometer, respectively. A detailed analysis is provided of how the hydrolysis and condensation of 3-aminopropyltriethoxysilane and the pH value are vital in fabricating the $Fe_3O_4@Ag$ nanoeggs. The prepared $Fe_3O_4@Ag$ nanoeggs possessed uniform size, improved monodispersity, stability against aggregation and high magnetization, which were utilized for the detection of latent fingerprints deposited onto different surfaces. The experimental results showed that the latent fingerprints developed with the $Fe_3O_4@Ag$ nanoeggs powders exhibited excellent ridge details with minimal background staining.