• ETRI Journal
• /
• 제21권4호
• /
• pp.1-8
• /
• 1999

Thick metal 0.8${\mu}m$ CMOS technology on high resistivity substrate(RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15mA that is an excellent noise performance compared with the offchip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integrating of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatibel process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer.

• ETRI Journal
• /
• 제28권3호
• /
• pp.386-388
• /
• 2006

Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain-control range of 23 dB with a control-voltage range from 0.4 to 2.6 V. The gain-tuning sensitivity is 90 mV/dB. At $V_{CTRL}$= 2.4 V, the 1 dB compression output power, $P_{1-dB}$, and dc bias current are 0 dBm and 59 mA in a VGA with an emitter resistor and -1.8 dBm and 71mA in a VGA with a constant current source, respectively.

• 한국ITS학회 논문지
• /
• 제2권2호
• /
• pp.97-101
• /
• 2003

본 논문에서는 Ku-band용 주파수 하향변환기에 사용할 수 있는 MMIC (monolithic microwave integrated circuit) mixer를 InGaAs/GaAs p-HEMT 공정의 Schottky diode를 이용하여 설계 및 제작하였다. 일반적인 double balanced mixer의 구조에서 IF단자와 LO 단자를 서로 바꾸어 설계함으로써 mC chip의 크기를 크게 줄일 수 있었다. 설계된 MMIC mixer는 RF(14.0 - 14.5 GHz)와 IF(12.252 - 12.752 GHz)의 주파수 대역에서 사용할 수 있다. 제작된 초소형의 MMIC mixer chip은 크기가 3.3 m X 3.0 m이고, on-wafer측정 결과 9.8 dB 이하의 변환손실과 23 dB 이상의 RF-to-IF 격리도 및 38 dB 이상의 LO-to-IF 격리도의 특성을 각각 얻었다.

• E2M - 전기 전자와 첨단 소재
• /
• 제30권8호
• /
• pp.25-33
• /
• 2017

• 전자통신동향분석
• /
• 제36권3호
• /
• pp.12-22
• /
• 2021

Since the technical realization of self-aligned planar complementary metal-oxide-semiconductor field-effect transistors in 1960s, semiconductor manufacturing has aggressively pursued scaling that fruitfully resulted in tremendous advancement in device performances and realization of features sizes smaller than 10 nm. Due to many intrinsic material and technical obstacles, continuing the scaling progress of semiconductor devices has become increasingly arduous. As an effort to circumvent the areal limit, stacking devices in a three-dimensional fashion has been suggested. This approach is commonly called monolithic three-dimensional (M3D) integration. In this work, we examined technical issues that need to be addressed and overcome to fully realize energy efficiency, short latency and cost competency. Full-fledged M3D technologies are expected to contribute to various new fields of artificial intelligence, autonomous gadgets and unknowns, which are to be discovered.

• The Journal of Advanced Prosthodontics
• /
• 제5권3호
• /
• pp.296-304
• /
• 2013

PURPOSE. The aim of this study was to evaluate the effect of polishing and glazing on the color and spectral distribution of monolithic zirconia. MATERIALS AND METHODS. Forty-five monolithic zirconia specimens ($16.3mm{\times}16.4mm{\times}2.0mm$) were fabricated and divided into 5 groups according to the number of A2-coloring liquid applications (Group I to V). Each group was divided into 3 subgroups according to the method of surface treatments (n=3): N: no treatment; P: polishing; G: glazing. Color and spectral distribution of five different areas of each specimen were measured according to CIELAB color space in the reflectance mode relative to the standard illuminant D65 on a reflection spectrophotometer. Data were analyzed using one-way ANOVA followed by Tukey's HSD test, Pearson correlation and regression analysis (${\alpha}$=.05). RESULTS. There was a significant difference in CIE $L^*$ between Subgroup N and P, and in CIE $b^*$ between Subgroup P and G in each group. Spectral reflectance generally decreased in Subgroup P and G in comparison with Subgroup N. Color differences between Subgroup P and G were within the perceptibility threshold (${\Delta}E{^*}_{ab}$ < 3.7) in most groups. Highly significant correlation was found between CIE $b^*$ and each subgroups as the number of coloring liquid applications increased ($R^2$ >0.88, P<.001). CONCLUSION. A perceptible color difference can be detected after polishing of monolithic zirconia. Polishing decreases the lightness, and glazing also decreases the lightness, but increases the yellowness of monolithic zirconia.

• 대한전자공학회논문지TC
• /
• 제46권12호
• /
• pp.37-43
• /
• 2009

본 논문에서는 증폭특성이 우수한 달링톤-캐스코드(Darlington-Cascode) 증폭기 구조를 제안하였다. 전통적으로 고주파 증폭 특성이 우수하다고 알려진 기존의 캐스코드 증폭기 회로와의 비교를 위해 본 논문에서는 제안된 달링톤-캐스코드 구조와 기존의 캐스코드 구조의 증폭기를 동일 칩 상에 인접하도록 설계하였다. 이 회로들은 45 GHz의 $f_T$를 가진 $0.35-{\mu}m$ SiGe 기반의 초고주파 단일 칩(MMIC; Monolithic Microwave Integrated Circuit)으로 제작되어 동일 조건 하에서 X-band 대역의 고주파 증폭특성들이 측정, 비교 및 분석되었다. 성능 측정결과 제안된 달링톤-캐스코드 증폭기는 11.5 dBm의 P1dB와 19.5 dB의 선형 증폭도를 보여주었으며, 기존 캐스코드 증폭기와 비교시 PldB는 5.2 dB, 이득면에서는 2.5 dB의 향상된 결과를 나타내었다.

• Journal of Advanced Marine Engineering and Technology
• /
• 제37권1호
• /
• pp.99-104
• /
• 2013

본 논문에서는 밀리미터파에의 응용을 위하여, 소형화된 다운컨버터 MMIC(monolithic microwave integrated circuit)를 제안하였다. 구체적으로는, RF(radio frequency) 및 LO(local oscilator) 신호의 격리특성을 위해 Lange 커플러가 삽입되었고, ${\lambda}$/4 전송선로를 연결하여 역위상 RF와 동위상 LO 신호가 믹서부분 FET(field effect transistor)의 게이트에 인가되었다. 또한, IF(intermediate frequency) 출력 신호의 역위상의 결합과 LO 누설신호 제거를 위하여 역위상 결합용 능동 벌룬이 출력 포트에 설치되었다. 측정 결과에 따르면, 제안된 다운컨버터 MMIC는 양호한 RF 특성을 보였다. 구체적으로, 63 GHz의 RF 주파수와 60.6 GHz의 LO 주파수에서 IF 출력 포트에서의 LO 누설 전력이 .25 dBc, RF와 LO의 격리특성은 18 dB를 보였으며, 변환 이득이 10.3 dB를 보였다. 따라서, SAW 필터와 같은 LO 제거용 off-chip 소자는 제안된 다운컨버터 MMIC에서는 필요하지 않게 되었다. 모든 능동소자와 수동소자가 GaAs MMIC 내부에 집적되었으며, 전체 사이즈는 $2.2{\times}1.4mm^2$ 로써 초소형 MMIC가 구현되었다.

• Journal of the Optical Society of Korea
• /
• 제16권1호
• /
• pp.1-5
• /
• 2012

This paper describes a 150-Mb/s monolithic optical receiver for plastic optical fiber link using a standard CMOS technology. The receiver integrates a photodiode using an N-well/P-substrate junction, a pre amplifier, a post amplifier, and an output driver. The size, PN-junction type, and the number of metal fingers of the photodiode are optimized to meet the link requirements. The N-well/P-substrate photodiode has a 200-${\mu}m$ by 200-${\mu}m$ optical window, 0.1-A/W responsivity, 7.6-pF junction capacitance and 113-MHz bandwidth. The monolithic receiver can successfully convert 150-Mb/s optical signal into digital data through up to 30-m plastic optical fiber link with -10.4 dBm of optical sensitivity. The receiver occupies 0.56-$mm^2$ area including electrostatic discharge protection diodes and bonding pads. To reduce unnecessary power consumption when the light is not over threshold or not modulating, a simple light detector and a signal detector are introduced. In active mode, the receiver core consumes 5.8-mA DC currents at 150-Mb/s data rate from a single 3.3 V supply, while consumes only $120{\mu}W$ in the sleep mode.

• 한국산업정보학회논문지
• /
• 제6권4호
• /
• pp.48-53
• /
• 2001

TMT-2000 기지국용 3단 저잡음 증폭기를 설계하고 제작한다. 첫째 단에서의 증폭소자는 잡음특성이 좋은 GaAs HJ-FET를 사용하고, 둘째 및 셋째 단에는 이득과 출력전압이 높은 값을 갖도록 하기 위해 모노리딕(monolithic) 마이크로웨이브 집적회로를 사용한다. 또한 입력 정재파비를 낮추기 위해서 평형증폭기를 사용하는데, 이 평형증폭기의 위상차로 인한 잡음지수를 최소화하기 위해서 첫째 단에만 제한적으로 사용한다. 제작된 증폭기는 동작 주파수에서 이득 39.74$\pm$0.4dB, 최대잡음지수 0.97dB, 입.출력 정재파비 1.2 이하 및 OIP$_3$ 특성은 38.17dBm을 나타낸다.