Monolithic SiGe HBT Feedforward Variable Gain Amplifiers for 5 GHz Applications

  • Kim, Chang-Woo (College of Electronics and Informations, Kyung Hee University)
  • Received : 2005.12.09
  • Published : 2006.06.30

Abstract

Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain-control range of 23 dB with a control-voltage range from 0.4 to 2.6 V. The gain-tuning sensitivity is 90 mV/dB. At $V_{CTRL}$= 2.4 V, the 1 dB compression output power, $P_{1-dB}$, and dc bias current are 0 dBm and 59 mA in a VGA with an emitter resistor and -1.8 dBm and 71mA in a VGA with a constant current source, respectively.

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