• Title/Summary/Keyword: mim

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Factors Affecting the Mobile Instant Messenger Users' Continued Usage Behavior and the Moderating Role of Habits: Focused on WeChat (모바일 인스턴트 메신저 사용자의 지속사용행동에 대한 영향요인과 습관의 조절효과: WeChat을 중심으로)

  • Zhang, Heng;Koh, Joon;Kim, Kyun Soo
    • The Journal of Information Systems
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    • v.25 no.3
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    • pp.61-90
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    • 2016
  • Purpose Recently the usage of Mobile Instant Messenger(MIM) has been increased all over the world. With the development of Mobile Internet, a large amount of mobile application came into being, such as WeChat, the most popular MIM now in China. It has a huge number of registered users, but just only half of them are the "active users". This study intends to examine what factors affect MIM user's continuance intention and actual usage behavior. Design/Methodology/Approach Based on the framework of Perception/Emotion-Behavior and the extended ECM-ISC (Expectation Confirmation Model of IS Continuance), this research introduced some unique variables to a user satisfaction model focusing on perceived/emotional factors in WeChat. In this model, perceived/emotional factors have been divided into enabler factors and inhibitor factors to analyze the effect on continuance intention and actual usage behavior. Also, the moderate effect of the habits was discussed. An online questionnaire survey of 203 WeChat users was conducted and the empirical validation was employed to test the research model. Findings From the empirical results, perceived usefulness, expectation confirmation, and needs for affiliation significantly affected satisfaction. Also, satisfaction influenced continuance intention which led to actual usage behavior. We found that the habit moderates the relationship between satisfaction and continuance intention. The result of this study provides guidance to the developers and operators of WeChat on how to improve enhance users' satisfaction and loyalty.

The Implementation of Multi-Port UTOPIA Level2 Controller for Interworking ATM Interface Module and MPLS Interface Module (MPLS모듈과 ATM모듈과의 Cell Mode 인터페이스를 위한 Multi-Port지원 UTOPIA-L2 Controller구현)

  • 김광옥;최병철;박완기
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.11C
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    • pp.1164-1170
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    • 2002
  • In the ACE2000 MPLS system, MPLS Interface Module(MIM) is composed of an ATM Interface Module and a HFMA performing a packet forwarding. In the MIM, the HFMA RSAR receive cells from the Physical layer and reassemble the cells. And the IP Lookup controller perform a packet forwarding after packet classification. Forwarded packet is segmented into cells in the HFMA TSAR and transfer to the ALMA for the transmission to an ATM cell switch. When the MIM make use of an ATM Interface Module, it directly connect the ALMA with a PHY layer using the UTOPIA Level2 interface. Then, an ALMA performs Master Mode. Also, the HFMA TSAR performs the Master Mode in the MIM. Therefore, the UTOPIA-L2 Controller of the Slave Mode require for interfacing between an ALMA and a HFHA TSAR. In this paper, we implement the architecture and cell control mechanism for the UTOPIA-L2 Controller supporting Multi-ports.

Interaction of Conjugated Conducting Polymer with Ionic Liquids (공액 전도성 고분자와 이온성 액체 간에 상호작용 연구)

  • Kim, Joong-Il;Kim, Do-Young;Kim, In-Tae
    • Journal of the Korean Applied Science and Technology
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    • v.31 no.3
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    • pp.337-344
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    • 2014
  • In this paper, we have examined the interaction of low bandgap polymer {poly(2-heptadecyl-4-vinylthieno[3,4-d]thiazole)(PHVTT)} with ionic liquids. Further, we have studied the temperature dependent interactions between the ionic liquids [tri-butyl methyl ammonium methyl sulfate ([TBMA][$MeSO_4$]), methyl imidazolium chloride ([MIM]Cl) and butyl methyl imidazolium chloride ([BMIM]Cl)] and polymer using UV-vis spectroscopy, FT-IR spectroscopy, photoluminescence (PL) spectroscopy, as a function of temperature at 21, 28, 32, $37^{\circ}C$. These experimental results suggest that interactions of polymer with ionic liquids ([MIM]Cl, [TBMA][$MeSO_4$]) showed weak interactions by increasing temperature but [BMIM]Cl has no significant effect with increase in temperature.

Characterization of the Manufacturing Process and Mechanical Properties of CoCrFeMnNi High-Entropy Alloys via Metal Injection Molding and Hot Isostatic Pressing

  • Eun Seong Kim;Jae Man Park;Do Won Lee;Hyojeong Ha;Jungho Choe;Jaemin Wang;Seong Jin Park;Byeong-Joo Lee;Hyoung Seop Kim
    • Journal of Powder Materials
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    • v.31 no.3
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    • pp.243-254
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    • 2024
  • High-entropy alloys (HEAs) have been reported to have better properties than conventional materials; however, they are more expensive due to the high cost of their main components. Therefore, research is needed to reduce manufacturing costs. In this study, CoCrFeMnNi HEAs were prepared using metal injection molding (MIM), which is a powder metallurgy process that involves less material waste than machining process. Although the MIM-processed samples were in the face-centered cubic (FCC) phase, porosity remained after sintering at 1200℃, 1250℃, and 1275℃. In this study, the hot isostatic pressing (HIP) process, which considers both temperature (1150℃) and pressure (150 MPa), was adopted to improve the quality of the MIM samples. Although the hardness of the HIP-treated samples decreased slightly and the Mn composition was significantly reduced, the process effectively eliminated many pores that remained after the 1275℃ MIM process. The HIP process can improve the quality of the alloy.

A Study on the Process Capability Analysis of MIM Product (금속분말 사출성형 제품의 공정능력분석에 관한 연구)

  • Choi, Byung-Ky;Lee, Dong-Gil;Choi, Byung-Hui
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.19 no.1
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    • pp.57-64
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    • 2010
  • Metal Injection Molding (MIM) is attractive because it produces consistent, complex-geometry components for high-volume, high-strength, and high-performance applications. Also MIM using in optical communication field, display field, and semi-conductor field is a cost-effective alternative to metal machining or investment casting parts. It offers tremendous single-step parts consolidation potential and design flexibility. The objective of this paper is to study the suitability of design, flow analysis, debinding and sinterin processes, and capability analysis. The suitable injection conditions were 0.5~1.5 second filling time, 11.0~12.5 MPa injection pressure derived from flow analysis. The gravity of the product is measured after debinding an sintering. The maximum and minimum gravity levels are 7.5939 and 7.5097. the average and standard deviation are 7.5579 and 0.0122; when converted into density, the figure stands at 98.154%. According to an analysis of overall capacity, PPM total, which refers to defect per million opportunities(DPMO), stands at 166,066.3 Z.Bench-the sum of defect rates exceeding the actual lowest and highest limits-is 0.97, which translates into the good quality rate of around 88.4% and the sigma level of 2.47.

High Security FeRAM-Based EPC C1G2 UHF (860 MHz-960 MHz) Passive RFID Tag Chip

  • Kang, Hee-Bok;Hong, Suk-Kyoung;Song, Yong-Wook;Sung, Man-Young;Choi, Bok-Gil;Chung, Jin-Yong;Lee, Jong-Wook
    • ETRI Journal
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    • v.30 no.6
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    • pp.826-832
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    • 2008
  • The metal-ferroelectric-metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly-insulator-poly (PIP) capacitor and the metal-insulator-metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell.

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A Study on Fault Alarming Architecture for ACE2000 MPLS Interface Module (ACE2000 MPLS 정합 모듈의 장애경보 구조 연구)

  • Park, Wan-Ki;Park, Dae-Geun;Jeong, Youn-Kwae;Kim, Dae-Young
    • Proceedings of the Korea Information Processing Society Conference
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    • 2001.10b
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    • pp.1497-1500
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    • 2001
  • ACE2000 MPLS 시스템은 국가 시스템으로 사용하기 위해 기 개발한 ACE2000 ATM 교환시스템에 Ships-in-the-night 모드 형태로 ATM 교환시스템에 MPLS 기능을 추가함으로써 사용자들에게 차별화된 서비스를 제공하도록 하는 시스템이다. MPLS 시스템 모듈인 MIM(MPLS Interface Module)은 1모듈이 2.5Gbps 의 대용량 패킷 포워딩 기능을 갖는 시스템으로서 BPAA, HALA, 가입자 정합 보드에 하드웨어 패킷 포워딩 및 VC 머징 기능을 갖는 HFMA 하드웨어 PBA 가 추가되어 모듈을 구성한다. ACE2000 MPLS 시스템에서는 MIM 모듈의 운용/보전을 위해 모듈내의 각 보드에 대하여 장애 발생시 하드웨어 및 소프트웨어적으로 MSC 에게 보고하도록 하고 있다. MIM 모듈에 대한 장애보고 체계는 하드웨어적으로는 각 보드의 탈/실장, 전원 장애, 기능장애 등을 경보계통을 통해서 보고하는 구조로 이루어져 있고, 소프트웨어적으로는 ATM IPC 채널을 이용한 경보체계를 이용하여 보고함으로써 시스템의 원활한 시스템 운용/보전에 활용하고 있다. 본 논문에서는 이러한 ACE2000 MPLS 시스템의 장애경보(Fault Alarming) 방법 및 그 구조에 대하여 언급하였다.

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A Study on the Electrical Properties of MIM Structures Based on Ge2Sb2Te5 and Ge8Sb2Te11 Thin Films for ReRAM (ReRAM응용을 위한 Ge2Sb2Te5와 Ge8Sb2Te11 기반 MIM구조 박막의 전기적 특성 연구)

  • Jang, Hwi-Jong;Kong, Heon;Yeo, Jong-Bin;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.3
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    • pp.144-147
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    • 2017
  • In this study, $Ge_2Sb_2Te_5$ and $Ge_8Sb_2Te_{11}$ were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the $ITO/Ge_8Sb_2Te_{11}/Ag$ device, this $ITO/Ge_2Sb_2Te_5/Ag$ ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.

A Study on Displacement Current Characteristics of DLPC Monolayer (I) (DLPC 인지질 단분자막의 변위전류 특성 연구 (I))

  • Song, Jin-Won;Lee, Kyung-Sup;Choi, Yong-Sung
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.1
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    • pp.117-122
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    • 2007
  • LB method is one of the most interesting technique to arrange certain molecular groups at precise position relative to others. Also, the LB deposition technique can fabricate extremely thin organic films with a high degree of control over their thickness and molecular architecture. In this way, new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, evaluation of physical properties was made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC. Lipid thin films were manufacture by detecting deposition for the accumulation and the current was measured after the electric bias was applied across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

FABRICATION OF ULTRA THIN $IrO_2$-TOP-ELECTRODE FOR IMPROVING EMISSION CURRENT DENSITY IN MIM CATHODES (MIM 구조의 음극 전계 방출 효율 증진을 위한 $IrO_2$ 상부전극의 제조)

  • Park, Tae-Joo;Jung, Doo-Seok;Hwang, Cheol-Seong;Park, Min-Soo;Kang, Nam-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.988-990
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    • 2003
  • 기존의 FED 용 MIM cathode 에 쓰이는 다층금속상부 전극을 열처리하였을 때 생기는 문제점에 대하여 살펴보았다. 먼저 열처리 후에 상부전극자체가 열변형이 일어나면서 나타나는 비저항의 증가, 표면 형상의 악화 등이 문제점으로 나타났고, 여기에 하부전극의 변형이 이러한 현상을 더욱 악화시키는 것을 확인할 수 있었다. 특히, 상부전극의 경우 그 두께가 극히 얇아 열변형이 매우 취약한 탓에 대체 물질의 개발이 시급하였다. 산화물전극은 열변형에 대해 매우 안정하여 열처리 후, 비저항이나 표면 형상의 변화가 적으며, 얇은 두께에서도 균일하게 박막이 형성되어 그 특성이 다층금속전극에 비해 매우 뛰어남을 확인하였다.

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