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http://dx.doi.org/10.4313/JKEM.2017.30.3.144

A Study on the Electrical Properties of MIM Structures Based on Ge2Sb2Te5 and Ge8Sb2Te11 Thin Films for ReRAM  

Jang, Hwi-Jong (Department of Advanced Chemicals and Engineering, Chonnam National University)
Kong, Heon (Department of Advanced Chemicals and Engineering, Chonnam National University)
Yeo, Jong-Bin (The Research Institute for Catalyst, Chonnam National University)
Lee, Hyun-Yong (School of Chemical Engineering, Chonnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.30, no.3, 2017 , pp. 144-147 More about this Journal
Abstract
In this study, $Ge_2Sb_2Te_5$ and $Ge_8Sb_2Te_{11}$ were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the $ITO/Ge_8Sb_2Te_{11}/Ag$ device, this $ITO/Ge_2Sb_2Te_5/Ag$ ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.
Keywords
ReRAM; Chalcogenide; MIM structure;
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