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A Study on Displacement Current Characteristics of DLPC Monolayer (I)  

Song, Jin-Won (한국기계연구원)
Lee, Kyung-Sup (동신대학교 전기공학과)
Choi, Yong-Sung (동신대학교 전기공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.56, no.1, 2007 , pp. 117-122 More about this Journal
Abstract
LB method is one of the most interesting technique to arrange certain molecular groups at precise position relative to others. Also, the LB deposition technique can fabricate extremely thin organic films with a high degree of control over their thickness and molecular architecture. In this way, new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, evaluation of physical properties was made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC. Lipid thin films were manufacture by detecting deposition for the accumulation and the current was measured after the electric bias was applied across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.
Keywords
Dielectric relaxation phenomena; Surface pressures; Displacements current; Monolayer films; Phospolipid monomolecular DLPC; Lipid thin film; MIM device;
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1 M.lwamoto, T.Sasaki, 'Thermally stimulated discharge of Au/LB/ Air-Gap/Au structures incorporaying Cadmium Arachidate Langmuir Blodgett films', jpn, J. Appl, Phys. vol. 29, pp. 536-539, 1990   DOI
2 Tohru Kubota, Mitsumasa Iwamoto, Hideyuki Noshiro, Matsuo Sekine, 'Josepson junctions using polyimide Langmuir Blodgett films with a Nb/Au/PI/(Pb-Bi) structure', jpn.j.Appl.Phys., vol. 30. pp. 393-395, 1991   DOI
3 Michael C. Petty, 'Langmuir Blodgett films an introduction, London, Cambridge University Press, 1966, pp. 42-64
4 G.G.Roberts, T.M.Mcginnity, P.S.Vincett, W.A.Barlow, 'AC and DC conduction in lightly substituted anthracen Langmuir films', Thin solid films, vol. 68, pp. 223-232, 1980   DOI   ScienceOn
5 M. Iwamoto, S.Shidoh, T.Kubota, M. Sekine, 'Electric properties of Langmuir Blodgett films sand witched between Pb- Bi superconducting electrodes', jpn.j.Appl.Phy., vol. 27. pp. 1825-1830, 1988   DOI   ScienceOn
6 이경섭 외 6인, '유기된 변위전류의 2차 전이특성', 대한전기학회 하계학술대회논문집, pp.1693-1695, 2000
7 L.S.Miller, D,J.Walton, P.J,W.Stone, A.M.McRoberts, R.S. Sethi, 'Langmuir Blodgett films for nonlinear optical applications', Journal of materials science materials in electronic, pp. 75-82, 1994
8 Hans Kuhn, 'Present status and future prospect of LB film research', 89 Fourth international conference on LB films, pp.2 - 3, 1989
9 M.Iwamoto, AFukuda. 'Charge storage phenomena and I-V characteristics observed in ultrathin polyimide Langmuir Blodgett films', jpn. J Appl. Phys. vol. 31, pp. 1092-1096. 1992   DOI
10 Satoru Isoda, Yoshio Hanazato, Kouichi Akiyama, Satoshi Nishikawa, Satoshi Ueyama, 'Photoelectric properties based on photo-induced electron transfer processes in flavin.porphyrin hetero-type LangmuirBlodgett films', Thin Solid Films 441, 277-283, 2003   DOI   ScienceOn
11 J.Zhen, C.Lin, J.s.Men, T.L.Wei, Y.Wei, 'Surface state density distribution in band gap of metal/LB Films/Semiconductor structure', 89 Fourth international conference on LB films, pp.388-389, 1989
12 S.Carrara, A.Gussoni, V.Erokhin, C.Nicolini, 'On the degradation of conducting Langmuir Blodgett film', Journal of materials science materials in electronic vol. 6, pp. 79- 83. 1995
13 Masuo Aizawa, Koji Owacu, Mieco Matsuzawa, Hiroaki Shinohara, Y oshihito Ikariyama, 'Molecular film technology for bio sensor', 89 Fourth international conference on LB films, pp.176 -177, 1989
14 M.K.Ram, R.Gowri, RD.Malhotra, 'Electric properties of metal/Langmuir- Blodgett'Polyrneraldine baseilaver/ metal device', Journal of applied polymer science, vol 63. pp. 141 -145, 1997   DOI   ScienceOn