• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1899-1901
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• 2001

본 논문에서는 3차원 feed horn 안테나를 볼로미터에 결합함으로써 감지도(Detectivity)를 향상시킨 비가시광 영상 감지 소자를 제안하였다. Feed horn 안테나의 우수한 지향성(Directivity)를 통해서 주위의 잡음 성분을 제거함으로써 감지도의 향상을 확인할 수 있었다. 안테나와 볼로미터와의 결합 손실을 줄이기 위해서 볼로미터의 흡수층의 모양을 원형의 형태로 하였으며 크기도 안테나 폭과 일치를 시켰다. 또한 열적 고립 구조를 만들기 위한 지지 다리의 모양도 원형의 형태로 하여서 전체 길이를 증가 시켰으며 이로 인해 열전도도(Thermal conductance)를 $4.65{\times}10^{-8}$[W/K]까지 낮출 수 있었 다. 설계된 소자의 감지도는 $2.37{\times}10^{9}$[$cm\sqrt{Hz}/W$]을 나타내었으며 안테나 결합을 통한 감지도의 향상을 확인 할 수 있었다. 볼로미터의 제작은 MEMS 기술을 이용한 표면미세가공(Surface micromachining)법으로 열적 고립 구조체를 제작할 수 있으며 3차원 feed horn안테나는 SU-8이라는 음성 감광제를 경사회전노광시켜서 제작할 수 있다.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1137-1139
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• 1999

저가의 우수한 성능을 갖는 적외선 영상표시 소자 구현에 적합한 마이크로 볼로미터를 MEMS 기술을 사용하여 제작하였다. 작은 열질량을 갖는 마이크로미터 단위의 열적고립 구조(thermal isolation structure) 제작은 폴리이미드(PI2611)를 희생층으로 사용하여 최종적으로 ashing공정 단계에서 폴리이미드를 제거하여 마이크로 볼로미터 구조를 완성하였다. 이 때의 구조층으로는 PECVD 질화실리콘($SiN_x$) 박막, 감지층으로 산화바나듐($VO_x$) 박막을 사용하였다. 본 연구에서는 폴리이미드 패턴 형성시 건식식각 공정조건 변수에 따라서 패턴의 기울기를 조절하여 폴리이미드 측면에서 발생되는 불 균일한 박막 증착과 패터닝 문제를 개선하였다. 또한 저응력의 질화실리콘 박막을 사용하여 잔류응력에 의한 열적고립 구조의 뒤틀림 현상을 완화하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.175-175
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• 2011

인체감지 적외선 센서로 사용되는 마이크로볼로미터 센서 감지재료인 $V_{2-x}W_xO_5$를 증착하고 단위소자를 제작하여 저항 및 센서성능을 측정 조사하였다. 감지재료는 $V_2O_5$에 W을 첨가하여 $V_{2-n}W_nO_5$ 타겟을 제작하였으며 RF sputtering 장비를 이용하여 $V_{1.85}W_{0.15}O_5$ 박막을 증착하였다. 증착온도 $400^{\circ}C$, $Ar/O_2$ 가스비율 50/20, 두께 200nm로 증착된 센서 재료의 특성을 조사한 결과 저항은 약 $20{\sim}70k{\Omega}$이었으며, TCR 값은 -3%/$^{\circ}C$ 이상으로 매우 우수한 박막특성을 얻었다. 볼로미터소자는 $40{\times}40{\sim}140{\times}140um^2$의 셀면적으로 설계하여 전극패턴과 습식식각공정으로 센서 구조체를 제작하였다. 소자의 성능평가는 검출기 측정장비를 이용하여 반응도 및 탐지도 특성을 조사하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.156-161
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• 2008

The fabrication of vanadium oxide films directly on Si(100) substrates by plasma atomic layer deposition(ALD) with vanadium oxytriisopropoxide(VOIP) and oxygen as the reactants have been performed at temperature ranging from 250 to $450^{\circ}C$. Growth rate of vanadium oxide was $2.8{\AA}$/cycle at $300{\sim}400^{\circ}C$ defined as ALD acceptable temperature window, Vanadium oxide has been shown the different phases at $250^{\circ}C$ and more than $300^{\circ}C$. It has been confirmed that the phase of the films deposited at $250^{\circ}C\;was\;V_2O_5$ type and that of the films above $300^{\circ}C\;was\;VO_2(T)$ type measured at room temperature, respectively. A large change in resistance and small temperature hysteresis corresponding to a temperature has been observed in the vanadium oxide film deposited at temperature $350^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.1005-1009
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• 2008

A noble infrared $\lambda/4$ absorbing structure using metal reflector was studied for uncooled infrared sensors. This paper described the design and the fabrication of IR uncooled detectors which were composed of 21 by 21 elements using the surface micromachining technology. The characteristics of the array were investigated in the spectral region of 4.26 ${\mu}m$. The fabricated detectors exhibited the thermal mass of $9.75\times10^{-9}$ J/K, the thermal conductance of $1.31\times10^{-6}$ W/K, the thermal time constant of 7.4 ms, the responsivity of $1.07\times10^5$ V/W and the detectivity of $1.04\times10^9$ $cmHz^{1/2}/W$, at the chopper frequency of 10 Hz and the bias current of 9.22${\mu}A$. Finally the absorptance efficiency of $\lambda/4$ absorbing structure was about 23.2 % higher than that of absence absorbing structure.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.327-332
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• 2013

Nickel oxide films using RF sputter was formed on the $SiO_2/Si$ substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about $34.25{\Omega}{\cdot}cm$. And it was reduced to $18.65{\Omega}{\cdot}cm$ according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of $34.25{\Omega}{\cdot}cm$ was $-2.01%/^{\circ}C$. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.361-361
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• 2007

A lot of efforts have been paid to develop infrared imaging systems in last decades. Bolometer has a wide range of applications from military to commercial, such as military night vision, medical imaging system and so on. Bolometer is a resistive sensor that detects temperature changes through resistance change. To improve detecting ability, bolometer should have a good resistive film which has high temperature coefficient of resistance (TCR) value. Colossal magnetoresistance (CMR) $L_{1-x}A_xMnO_3$ (where L and A are trivalent rare-earth ions and divalent alkaline earth ions, respectively.) are received attention to apply bolometer resistive film because it has a high TCR property which was discovered in the metal to semiconductor phase transition temperature region. In this work, CMR films were deposited on various substrates in relative low substrate temperature by RF magnetron sputtering. The influence of deposition parameters such as substrate temperature, gas partial pressure, and so on have been studied. The structural and TCR properties of the films were also investigated for applying to microbolometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.234-234
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• 2013

VOx 박막은 마이크로볼로미터 적외선 센서의 감지재료로 주로 사용된다. 일반적으로 VOx 박막은 RF sputtering 방법으로 증착이 되며, 이 때 저항 값은 수 kohm~수 Mohm, TCR 값은 -1.5~-2.0%/K까지 다양하게 변화되어 나타난다. 이는 산소의 phase가 여러가지로 변화되기 때문에 재현성이 떨어지는 단점이 있으며, 결정성있는 박막을 증착하기 어려운 문제들이 있다. 본 연구에서는 VOx 박막의 재현성 및 재료의 안정성을 위해 ZnO 물질을 첨가하여 sandwich 구조의 나노박막을 증착하여 산소 열처리를 통해 산소의 phase가 어떻게 변화되는가를 XRD 측정을 통해 조사하였다. ZnO 나노박막을 첨가함으로써 갓 증착되었을 때의 XRD는 V2O5 주된 상을 이루고 있었으며, 산소열처리에 의해 VO2상이 나타남을 알 수 있었다. 또한 V2O5 phase가 표면쪽의 얇은 층에서 주로 나타나고, 중간층은 V2O5와 VO2 phase 가 혼합된 형태로 존재함을 X-ray diffraction 분석을 통해 알 수 있었다. 또한 GIXRD 측정을 통해 깊이에 따른 혼합 phase가 주로 VO2에 의해 형성된 것임을 확인할 수 있었다. 또한 산소열처리의 온도 및 시간에 따라 XRD 특성을 조사하였으며, 최적의 열처리 조건을 XRD 피크를 통해 찾고자 하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.131-131
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• 2003

Surface micromachined uncooled IR detector with the optimized VOx bolometric layer was fabricated based on sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$. In order to improve the detectivity of the IR detector, we optimized a few factors in the viewpoint of bolometric material. Vanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance at room temperature. It is, however, very difficult to deposit vanadium oxide thin films having high temperature coefficient of resistance and low resistance because of process limits in microbolometer fabrication. In order to increase the responsivity and decrease noise, we increase TCR of bolometric material and decrease room temperature resistance based on the sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$ by conventional sputter. By oxygen diffusion through low temperature annealing of V$_2$O$_{5}$V/V$_2$O$_{5}$ in oxygen ambient, various mixed phase vanadium oxide was formed and we obtained TCR in range of-1.2 ~-2.6%/$^{\circ}C$ at room temperature resistance of 5~100k$\Omega$.mega$.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.311-316
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• 2018

An antenna-coupled bolometer-type terahertz sensor was designed, fabricated, evaluated, and utilized to obtain terahertz transmission images. The sensor consists of a thin film bowtie antenna that resonates accordingly in response to an incident terahertz beam, a heater that converts the applied current in the antenna into heat, and a microbolometer that converts the rise in temperature into a change in resistance. The device is fabricated by a bulk micromachining process on a 4-inch silicon wafer. The fabricated sensor chip has a size of $2{\times}2mm$ and an active area of $0.1{\times}0.1mm^2$. The temperature coefficient of resistance (TCR) of the bolometer film (VOx) is 2.0%, which is acceptable for bolometer applications. The output sensor signal is proportional to the power of the incident terahertz beam. Transmission images were obtained with a 2-axis scanning imaging system that contained the sensor. The small active area of the sensor will enable the development of highly sensitive focal plane array sensors in terahertz imaging cameras in the future.