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http://dx.doi.org/10.4313/JKEM.2008.21.2.156

Fabrication and Properties of Vanadium Oxide Thin Films for Microbolometer by using Plasma Atomic Layer Deposition Method  

Yun, Hyeong-Seon (청주대학교 전자공학과)
Jung, Soon-Won (한국전자통신연구원 IT융합.부품연구소)
Jeong, Sang-Hyun (청주대학교 전자공학과)
Kim, Kwang-Ho (청주대학교 전자공학과)
Choi, Chang-Auck (한국전자통신연구원 IT융합.부품연구소)
Yu, Byoung-Gon (한국전자통신연구원 IT융합.부품연구소)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.2, 2008 , pp. 156-161 More about this Journal
Abstract
The fabrication of vanadium oxide films directly on Si(100) substrates by plasma atomic layer deposition(ALD) with vanadium oxytriisopropoxide(VOIP) and oxygen as the reactants have been performed at temperature ranging from 250 to $450^{\circ}C$. Growth rate of vanadium oxide was $2.8{\AA}$/cycle at $300{\sim}400^{\circ}C$ defined as ALD acceptable temperature window, Vanadium oxide has been shown the different phases at $250^{\circ}C$ and more than $300^{\circ}C$. It has been confirmed that the phase of the films deposited at $250^{\circ}C\;was\;V_2O_5$ type and that of the films above $300^{\circ}C\;was\;VO_2(T)$ type measured at room temperature, respectively. A large change in resistance and small temperature hysteresis corresponding to a temperature has been observed in the vanadium oxide film deposited at temperature $350^{\circ}C$.
Keywords
Atomic layer deposition(ALD); Vanadium oxytriisopropoxide(VOIP); Bolometer; Vanadium oxide;
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