Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Properties of Vanadium Oxide Thin Films for Microbolometer by using Plasma Atomic Layer Deposition Method

플라즈마 ALD법에 의해 제조된 마이크로볼로미터용 바나듐 산화막의 제작 및 특성

  • 윤형선 (청주대학교 전자공학과) ;
  • 정순원 (한국전자통신연구원 IT융합.부품연구소) ;
  • 정상현 (청주대학교 전자공학과) ;
  • 김광호 (청주대학교 전자공학과) ;
  • 최창억 (한국전자통신연구원 IT융합.부품연구소) ;
  • 유병곤 (한국전자통신연구원 IT융합.부품연구소)
  • Published : 2008.02.01
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Abstract

The fabrication of vanadium oxide films directly on Si(100) substrates by plasma atomic layer deposition(ALD) with vanadium oxytriisopropoxide(VOIP) and oxygen as the reactants have been performed at temperature ranging from 250 to $450^{\circ}C$. Growth rate of vanadium oxide was $2.8{\AA}$/cycle at $300{\sim}400^{\circ}C$ defined as ALD acceptable temperature window, Vanadium oxide has been shown the different phases at $250^{\circ}C$ and more than $300^{\circ}C$. It has been confirmed that the phase of the films deposited at $250^{\circ}C\;was\;V_2O_5$ type and that of the films above $300^{\circ}C\;was\;VO_2(T)$ type measured at room temperature, respectively. A large change in resistance and small temperature hysteresis corresponding to a temperature has been observed in the vanadium oxide film deposited at temperature $350^{\circ}C$.

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References

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