• 한국표면공학회지
• /
• 제38권2호
• /
• pp.73-78
• /
• 2005

A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition oxygen was added to Ar and the OH emission intensity was reduced abruptly When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didn't change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.

• 한국분말재료학회지
• /
• 제20권3호
• /
• pp.174-179
• /
• 2013

The study on the fabrication of iron powder from forging scales using hydrogen gas has been conducted on the effect of hydrogen partial pressure, temperature, and reactive time. The mechanism for the reduction of iron oxides was proposed with various steps, and it was found that reduction pattern might be different depending on temperature. The iron content in the scale and reduction ratio of oxygen were both increased with increasing reactive time at 0.1atm of hydrogen partial pressure. On the other hand, for over 30 minutes at 0.5 atm of hydrogen partial pressure, the values were found to be almost same. In the long run, iron metallic powder was obtained with over 90% of iron content and an average size of its powder was observed to be about $100{\mu}m$.

• 반도체디스플레이기술학회지
• /
• 제9권4호
• /
• pp.77-81
• /
• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• Bulletin of the Korean Chemical Society
• /
• 제24권5호
• /
• pp.573-578
• /
• 2003

The structural, magnetic, and transport properties of a mono-layered manganite $La_{0.7}Sr_{1.3}MnO_{4+{\delta}}$ were investigated using variable temperature neutron powder diffraction as well as magnetization and transport measurements. The compound adopts the tetragonal I4/mmm symmetry and exhibits no magnetic reflection in the temperature region of 10 K ≤ T ≤ 300 K. A weak ferromagnetic (FM) transition occurs about 130 K, which almost coincides with the onset of a metal-insulator (M-I) transition. Extra oxygen that occupies the interstitial site between the [(La,Sr)O] layers makes the spacing between the [MnO₂] layers shorten, which enhances the inter-layer coupling and eventually leads to the M-I transition. We also found negative magneto resistance (MR) below the M-I transition temperature, which can be understood on the basis of the percolative transport via FM metallic domains in the antiferromagnetic (AFM) insulating matrix.

• Nuclear Engineering and Technology
• /
• 제40권3호
• /
• pp.191-198
• /
• 2008

The influence of fission products' contents on the DUPIC fuel powder and pellet properties was experimentally evaluated using SIMFUEL as a surrogate for actual spent PWR fuel due to the high radioactivity of spent fuel. Pure $UO_2$ and SIMFUEL pellets with fission products equivalent to a burn-up of 35,000 MWd/tU and 60,000 MWd/tU were used as impurities in this study. The specific surface area of the powder milled after the OREOX treatment increased and resulted in sintered pellets with a theoretical density (TD) higher than 95%, regardless of the impurity contents. However, the grain size of the sintered pellets decreased with the increasing impurity contents. As a result of the dissolved oxides in $UO_2$ from the impurity groups, the specific surface area of the OREOX powder increased with an increase of the impurities. The grain size of the sintered pellets was significantly decreased by the metallic and oxide precipitates.

• 전기화학회지
• /
• 제16권3호
• /
• pp.138-144
• /
• 2013

Electrochemical reductions of $UO_2$ at various anode-to-cathode distances (1.3, 2.3, 3.2, 3.7 and 5.8 cm) were carried out to investigate the effect of the anode-to-cathode distance on the electrochemical reduction rate. The geometry of the electrolysis cell in this study, apart from the anode-to-cathode distance, was identical for all of the electrolysis runs. Porous $UO_2$ pellets were electrolyzed by controlling a constant cell voltage in molten $Li_2O-LiCl$ at $650^{\circ}C$. A steel basket containing the porous $UO_2$ pellets and a platinum plate were used as the cathode and anode, respectively. The metallic products were characterized by means of a thermogravimetric analyzer, an X-ray diffractometer and a scanning electron microscope. The electrolysis runs conducted during this study revealed that a short anode-to-cathode distance is advantageous to achieve a high current density and accelerate the electrochemical reduction process.

• 한국전기전자재료학회논문지
• /
• 제21권9호
• /
• pp.818-824
• /
• 2008

The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

• 한국표면공학회지
• /
• 제49권3호
• /
• pp.252-259
• /
• 2016

In order to form an aluminum-doped zinc oxide (AZO) transparent electrode film on a polyethylene terephthalate (PET) substrate used for a flexible display substrate, the AZO transparent electrode was produced at low temperature without substrate heating. Even though the produced electrode showed characteristic optical transmittance of 90 % (at 550 nm) and sheet resistance within $100{\Omega}/sq$, cracks occurred 10 minutes after loading applied 2 mm radius of curvature, and the sheet resistance increased linearly. An insertion layer of ZrCu was formed between the AZO film and the PET substrate to suppress the generation of cracks on the AZO film. It was verified that the crack was not generated 30 minutes after the loading of 2 mm radius of curvature, and no increase in sheet resistance was recorded. There was also not cracks in the dynamic bending test of 4 mm radius, but surface resistance was slightly increased. As a result, the ZrCu insertion film improved the interfacial adhesion between the substrate and AZO film layer without increasing sheet resistance and decreasing transmittance.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.262-263
• /
• 2005

For mechanical and electrical stability and environment protection, Cu and stainless steel stabilizer is laminated to Ag layer to produce a composite neutral-axis(N-A) architecture in which the YBCO layer is centered between the oxide buffered metallic substrate and stabilizer strip lamination. this architecture allows the wire to meet operational requirements including stresses at cryogenic temperature, winding tensions, mechanical bending requirements thermal and electrical stability under fault conditions. we have experimentally studied mechanical properties of laminated stainless steel stabilizer on YBCO coated conductors. we have laminated YBCO coated conductors by continuous dipping soldering process. we have investigated lamination interface between solder and stabilizer, YBCO coated conductor. we evaluated bonding properties tensile / shear bonding strength, peeling strength laminated YBCO coated conductors.

• Metals and materials international
• /
• 제24권6호
• /
• pp.1285-1292
• /
• 2018

Microstructural properties of as-grown and annealed CoCrFeMnNi high entropy alloy (HEA) oxynitride thin films were investigated. The CoCrFeMnNi HEA oxynitride thin film was grown by magnetron sputtering method using an air gas, and annealed under the argon plus air flow for 5 h at $800^{\circ}C$. The as-grown film was homogeneous and uniform composed of nanometer-sized crystalline regions mixed with amorphous-like phase. The crystalline phase in the as-grown film was face centered cubic structure with the lattice constant of 0.4242 nm. Significant microstructural changes were observed after the annealing process. First, it was fully recrystallized and grain growth happened. Second, Ni-rich region was observed in nanometer-scale range. Third, phase change happened and it was determined to be $Fe_3O_4$ spinel structure with the lattice constant of 0.8326 nm. Hardness and Young's modulus of the as-grown film were 4.1 and 150.5 GPa, while those were 9.4 and 156.4 GPa for the annealed film, respectively.