• 한국전기전자재료학회논문지
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• 제37권5호
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• pp.507-511
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• 2024

Various process modifications have been used to minimize SiO₂ gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.

• 한국재료학회지
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• 제14권8호
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• pp.542-546
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• 2004

We report a new fabrication process for high performance triode type CNT field emitters and their superior electrical properties. The CNT-based triode-type field emitter structure was fabricated by the conventional semiconductor processes. The keys of the fabrication process are spin-on-glass coating and trim-and-leveling of the carbon nanotubes grown in trench structures by employing a chemical mechanical polishing process. They lead to strong adhesion and a uniform distance from the carbon nanotube tips to the electrode. The measured emission property of the arrays showed a remarkably uniform and high current density. The gate leakage current could be remarkably reduced by coating of thin $SiO_{2}$ insulating layer over the gate metal. The field enhancement factor(${\beta}$) and emission area(${\alpha}$) were calculated from the F-N plot. This process can be applicable to fabrication of high power CNT vacuum transistors with good electrical performance.

• 한국기계가공학회지
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• 제17권4호
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• pp.160-168
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• 2018

Among the components of rotary hooks, a core component of an embroidery sewing system, a study was conducted to apply metal injection molding to the manufacture of a hook body and a housing that was very difficult to mechanical working. The correlation of feedstock, a mixture of binder and SCM 415 metal powder, and properties of the pressure-volume-temperature interrelationship, viscosity, specific heat, and thermal conductivity were measured. Injection molds for the hook body and the housing were developed through injection molding analysis using these properties and conducted injection tests. Optimal injection gate position and number, injection pressure, and injection time were obtained through a comparison of analysis results with the experiment results.

• 전기전자학회논문지
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• 제17권4호
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• pp.531-536
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• 2013

The impact of UV irradiation process on the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor was investigated. Due to the high intensity UV irradiation before the gate dielectric deposition, the conductivity of AlGaN/GaN structure and the drain saturation current of the transistor increased by about 10 %. However, the pinch off characteristics of transistor was severely deformed by the process. By comparing the electrical characteristics of the transistors, it was proposed that the high intensity UV irradiation formed a sub-channel under the two dimensional electron gas of AlGaN/GaN structure even without additional impurity injection.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1997년도 고액공존금속의 성형기술 심포지엄
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• pp.135-147
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• 1997

The production of light metal parts using aluminum is mainly performed by die casting and squeeze casting, which directly fabricate the required shape from the liquid state. However, die casting is subject to defects such as shrinkage porosity and air trapped when molten metal enters the cavity, whilst squeeze casting also has defects due to turbulent flow in the die cavity. Both diecasting and sqeeze casting have inhomogeneous mechanical property in terms of dendritic structure during solidification. Active research has been carried out on semi-solid processing, rather than on conventional process methods such as die casting, which involve various problems. Therefore in this paper, to introduce the fundamental technology for d e design, in die casting and forging process with semi-solid materials, relationship between stress and strain of semi-solid materials, and for producing parts die design has been proposed as parameters of globulization of the microstructure and gate shape. The prevention of various defects to produce sound parts are also introduced.

• Journal of Information Display
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• 제13권3호
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• pp.113-118
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• 2012

Metal oxide semiconductors were considered promising materials as backplanes of future displays. Moreover, the adoption of carrier-suppressing metal into indium-zinc oxide (IZO) has become one of the most important themes in the metal oxide research field. In this paper, efforts to realize and optimize IZO with diverse types of carrier suppressors are summarized. Properties such as the band gap of metal in the oxidized form and its electronegativity were examined to confirm their relationship with the metal's carrier-suppressing ability. It was concluded that those two properties could be used as indicators of the carrier-suppressing ability of a material. As predicted by the properties, the alkali earth metals and early transition metals used in the research effectively suppressed the carrier and optimized the electrical properties of the metal oxide semiconductors. With the carrier-suppressing metals, IZO-based thin-film transistors with high (above $1cm^2/V{\cdot}s$) mobility, a lower than 0.6V/dec sub-threshold gate swing, and an over $3{\times}10^6$ on-to-off current ratio could be achieved.

• 대한전자공학회논문지
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• 제24권2호
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• pp.254-259
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• 1987

This paper describes the CMOS standard cell library implemented in double metal single poly gate process with 3\ulcornerm design rule, and its results of testing. This standard cell library contains total 33 cells of random logic gates, flip-flop gates and input/output buffers. All of cell was made to have the equal height of 98\ulcornerm, and width in multiple constant grid of 9 \ulcornerm. For cell data base, the electric characteristics of each cell is investigated and delay is characterized in terms of fanout. As the testing results of Ring Oscillator among the cell library, the average delay time for Inverter is 1.05 (ns), and the delay time due to channel routing metal is 0.65(ps)per unit length.

• 대한전자공학회논문지SD
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• 제46권1호
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• pp.92-97
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• 2009

저 전력 소모는 의료용 이식 장치에서 매우 중요한 요소가 된다. 본 논문에 제안된 이식형 심장 박동 조절기의 감지 단에 필요한 저 전력 4차 Gm-C 필터는 다단 증폭 단으로 구현 되었다. 매우 큰 시상수를 구현하기 위해서 전류 분할 및 플로팅-게이트 기법이 적용된 OTA가 사용되었다. 측정 결과, 필터는 50 dB의 SFDR을 가지며, $1.8{\mu}$, W의 전력이 소모되었다. 전원 전압은 1.5 V가 공급되었고, 코어는 $2.4\;mm{\times}1.3\;mm$의 실리콘 면적을 차지한다. 제안된 필터는 1-poly 4-metal $0.35-{\mu}m$ CMOS 공정에서 제작되었다.

• 전자공학회논문지 IE
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• 제44권2호
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• pp.14-20
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• 2007

본 논문에서는 개선된 성능을 갖는 4치 D-플립플롭을 제안하였다. 제안된 4치 D 플립플롭은 뉴런모스를 기반으로 바이어스 인버터, 온도계 코드 출력회로, EX-OR 게이트, 전달 게이트를 이용하여 4치 항등 논리회로(Identity logic circuit)를 구성하고, 이를 2진의 RS 래치 회로와 결합하여 설계하였다. 설계된 회로들은 3.3V 단일 공급 전원에서 $0.35{\mu}m$ 1-poly 6-metal COMS 공정 파라미터 표준조건에서 HSPICE를 사용하여 모의실험 하였다. 모의실험 결과, 본 논문에서 제안된 4치 D 플립플롭은 100MHz 전후까지의 빠른 동작속도로 측정되었으며 PDP(Power dissipation-delay time product)와 FOM(Figure of merit)은 각각 59.3pJ과 33.7로 평가되어졌다.

• 한국생산제조학회지
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• 제22권2호
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• pp.248-255
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• 2013

The objective of this study is to optimize the Metal Injection Molding(MIM) process with design of experiments(DOE) and numerical analysis. To derive the optimal process condition, experiment or numerical analysis was performed under various process conditions. To analyze the interaction among influential factors contributing to the temperature at flow front and response surface in MIM, both central point and axial point were added to the full factorial design with 2 levels and 5 factors and then their impacts on response variable in 43 experimental conditions were analyzed and the significance was evaluated. As a result, sprue, runner, and gate were completely filled in about 0.247 seconds after injection, the front part of the green body was filled in about 0.3344 seconds, the green body except gate, etc changed to almost solid state in about 3.29 seconds, the Packinging pressure was completed in about 6.29 seconds, and the green body inside and outside and sprue, etc became solid in 13.2 seconds. The impact of individual or reciprocal action of factors on the temperature at flow front was analyzed through regular probability, test statistics, main effect, and interaction effect. As a result, of a total of 31 combinations of factors, 9 unit factors and reciprocal actions were significant, and the screening was also possible. A proper regression equation was drawn with regression analysis and response surface design on the response variable of temperature at flow front, and the applicability could be verified.